S1106 Search Results

S1106 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
8P34S1106NLGI		Renesas Electronics Corporation	1:6 LVDS Output 1.8V Fanout Buffer
8P34S1106NLGI8		Renesas Electronics Corporation	1:6 LVDS Output 1.8V Fanout Buffer

S1106 Price and Stock

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Allegro MicroSystems LLC APS11060LUAA-0SL MAGNETIC SWITCH UNIPOLAR 3SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APS11060LUAA-0SL	Cut Tape	7,960		1	1 $0.9 10 $0.9 100 $0.6172 1000 $0.6172 10000 $0.6172	Buy Now
	APS11060LUAA-0SL	Reel	7,500		500	1 - 10 - 100 - 1000 $0.4794 10000 $0.41391	Buy Now
Mouser Electronics	APS11060LUAA-0SL		3,910			1 $0.8 10 $0.618 100 $0.618 1000 $0.46 10000 $0.376	Buy Now
Renesas Electronics Corporation 8P34S1106NLGI IC CLK BUF 1:6 1.2GHZ 20VFQFPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	8P34S1106NLGI	Tray	4,143		1	1 $9.01 10 $7.06 100 $6.2875 1000 $6.2875 10000 $6.2875	Buy Now
Avnet Americas	8P34S1106NLGI	Tray	182	12 Weeks	1	1 $6.42 10 $6.42 100 $5.58889 1000 $5.58889 10000 $5.58889	Buy Now
Mouser Electronics	8P34S1106NLGI		3,117			1 $7.67 10 $6.74 100 $6.29 1000 $6.13 10000 $6.13	Buy Now
Newark	8P34S1106NLGI	Bulk	228		1	1 $9.66 10 $9.02 100 $7.9 1000 $5.81 10000 $5.66	Buy Now
ComSIT USA	8P34S1106NLGI		328			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	8P34S1106NLGI			13 Weeks	490	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics America	8P34S1106NLGI	Tray	4,143		1	1 $9.01 10 $7.06 100 $6.2875 1000 $6.2875 10000 $6.2875	Buy Now
E-Switch Inc KAS1106RT SWITCH SLIDE DIP SPST 0.025A 24V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KAS1106RT	Tube	1,063		1	1 $2.05 10 $1.667 100 $2.05 1000 $1.15499 10000 $0.92361	Buy Now
RS	KAS1106RT	Bulk		21 Weeks	1,026	1 - 10 - 100 - 1000 - 10000 $1.01	Get Quote
TE Connectivity PKS1106B1-4 KNOB KNURLED W/SKRT 0.250" PLAST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PKS1106B1-4	Bulk	480		1	1 $5.91 10 $5.348 100 $4.8377 1000 $4.37625 10000 $4.37625	Buy Now
Advanced Thermal Solutions Inc ATS-1106-C1-R0 1/2 BRICK HEATSINK 61X58X22.9MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-1106-C1-R0	Bulk	298		1	1 $19.87 10 $18.767 100 $15.455 1000 $14.0751 10000 $14.0751	Buy Now
Avnet Americas	ATS-1106-C1-R0	Bulk	50	8 Weeks	100	1 - 10 - 100 $13.7718 1000 $13.7718 10000 $13.7718	Buy Now
TME	ATS-1106-C1-R0		6		1	1 $19.47 10 $17.55 100 $16.23 1000 $16.23 10000 $16.23	Buy Now
Richardson RFPD	ATS-1106-C1-R0				100	1 - 10 - 100 $14.47 1000 $14.47 10000 $14.47	Buy Now

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S1106 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
74281 Abstract: No abstract text available Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested	Original	PDF	SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74281
Untitled Abstract: No abstract text available Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
diode s1 77 Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128 Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28	Original	PDF	S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Si4134DY-T1-E3 Abstract: si4134 c065 Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4134 c065
Untitled Abstract: No abstract text available Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4228DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SI4176DY Abstract: No abstract text available Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4176DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4176DY
Untitled Abstract: No abstract text available Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4228DY-T1-E3 2002/95/EC 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 11-Mar-11
si4176 Abstract: SI4176DY Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4176DY-T1-E3 2002/95/EC 11-Mar-11 si4176 SI4176DY
4AB20 Abstract: No abstract text available Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS	Original	PDF	Si4936CDY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4AB20
Untitled Abstract: No abstract text available Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4178DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SQD35N05-26L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC	Original	PDF	SQD35N05-26L AEC-Q101 2002/95/EC O-252 O-252 SQD35N05-26L-GE3 11-Mar-11
si1424 Abstract: No abstract text available Text: New Product Si1424EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.033 at VGS = 4.5 V 4 0.038 at VGS = 2.5 V 4 0.045 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 3 VDS (V) 20 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21	Original	PDF	Si1424EDH 2002/95/EC OT-363 SC-70 Si1424EDH-T1-GE3 11-Mar-11 si1424
Untitled Abstract: No abstract text available Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

Untitled Abstract: No abstract text available Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	PDF	SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
74281 Abstract: sup90n08-4m8p Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested	Original	PDF	SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 11-Mar-11 74281 sup90n08-4m8p
SI4276DY Abstract: No abstract text available Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4	Original	PDF	Si4276DY-T1-E3 2002/95/EC 150hay 11-Mar-11 SI4276DY
Untitled Abstract: No abstract text available Text: Si4804CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 • • • • Qg (Typ.) 7 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested	Original	PDF	Si4804CDY-T1-E3 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7	OCR Scan	PDF	S1103 S1104 S1106 DS1107 S1108 S1185 AD1185 1N4148, 1N914B, 1N5282
Untitled Abstract: No abstract text available Text: 00 o N- <9 I J ' T 7_ ' 1.74 Part No. Poles A B S B S 1101T SB S1102T SB S1103T SB S1104T SB S1105T SB S1106T SB S1107T SB S1108T SB S1109T SB S1110T SB S1112T 1 2 3.48 6.02 8.56 11.10 13.64 16.18 18.72 21.26 23.80 26.34 31.42 2.54 5.08 7.62 10.16 12.70 15.24	OCR Scan	PDF	1101T S1102T S1103T S1104T S1105T S1106T S1107T S1108T S1109T S1110T
Untitled Abstract: No abstract text available Text: nPEX' POWER PA84 • PA84A • PA84S A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • T U C S O N , A R IZ O N A • A P P L IC A T IO N S H O T L IN E 8 0 0 4 2 1 - 1 8 6 5 FEATURES • • • • • • HIGH SLEW RATE — 200V/us FAST SETTLING TIME — .1% in 1ns (PA84S)	OCR Scan	PDF	PA84A PA84S 00V/us PA84S) BB3584JM
SI106 Abstract: SI106-100 SI106-101 SI106-120 SI106-121 SI106-150 SI106-151 SI106-180 SI106-181 Text: SMT Power Inductor_ _ _ _ _ _ _ SI106 Type Features • Low profile 5.9mm max. height SMD type. ■ Unshielded. ■ Self-leads, suitable for high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter,	OCR Scan	PDF	SI106 SI106-100 SI106-120 SI106-150 SI106-180 S1106 SI106-151 SI106-181 SI106-101 SI106-121

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S1106 Search Results

S1106 Result Highlights (2)

S1106 Price and Stock

Allegro MicroSystems LLC APS11060LUAA-0SL

Renesas Electronics Corporation 8P34S1106NLGI

E-Switch Inc KAS1106RT

TE Connectivity PKS1106B1-4

Advanced Thermal Solutions Inc ATS-1106-C1-R0

S1106 Datasheets Context Search

74281

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diode s1 77

Si4134DY-T1-E3

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SI4176DY

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si4176

4AB20

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si1424

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74281

SI4276DY

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SI106