S PARAMETERS OF RF TRANSISTOR Search Results

S PARAMETERS OF RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

S PARAMETERS OF RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
microwave transistor siemens bfp 420 Abstract: 4144 lH21l BFP450 siemens MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT doppler radar SMX-1 BFP450 transistor s parameters noise sot-343 as Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jakob Huber ● Gerhard Lohninger RF measurements on SIEGET bipolar transistors: Predicting performance straight from the wafer Multistage measurements are intended to ensure unrestricted operation of RF transistors. But until recently,	Original		PDF
MRF5007 Abstract: AN211A AN215A AN721 430B-01 motorola an721 application Text: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF5007/D MRF5007 MRF5007 MRF5007/D* AN211A AN215A AN721 430B-01 motorola an721 application	PDF
AN569 Abstract: coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of	Original	AN569 AN569 coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study	PDF
Z7 DIODE Abstract: motorola an215a application "RF power MOSFETs" transistor motorola 236 zener diode z10 AN211A AN215A AN721 MRF5007 MRF5007R1 Text: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA MRF5007 MRF5007R1 The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF5007/D MRF5007 MRF5007R1 MRF5007 Z7 DIODE motorola an215a application "RF power MOSFETs" transistor motorola 236 zener diode z10 AN211A AN215A AN721 MRF5007R1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device	Original	MRF5015/D MRF5015 MRF5015/D*	PDF
mrf5015 Abstract: S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device	Original	MRF5015/D MRF5015 MRF5015/D* mrf5015 S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors	PDF
Triode 805 Abstract: MRF134 zener motorola 1N5925A AN215A AN721 Text: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.	Original	MRF134/D MRF134 MRF134/D* Triode 805 MRF134 zener motorola 1N5925A AN215A AN721	PDF
MRF134 Abstract: transistor motorola 359 zener motorola 1N5925A AN215A AN721 alc 266 Text: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance	Original	MRF134/D MRF134 MRF134/D* MRF134 transistor motorola 359 zener motorola 1N5925A AN215A AN721 alc 266	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 02APR04 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device	Original	MRF5015/D 02APR04 MRF5015 MRF5015/D*	PDF
"RF power MOSFETs" Abstract: AN211A AN215A AN721 MRF5035 Nippon capacitors Text: MOTOROLA Order this document by MRF5035/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5035 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device	Original	MRF5035/D MRF5035 MRF5035/D* "RF power MOSFETs" AN211A AN215A AN721 MRF5035 Nippon capacitors	PDF
j35 fet Abstract: mrf5015 Nippon capacitors MRF5015 equivalent Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 15MAR02 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device	Original	MRF5015/D MRF5015 MRF5015/D* MRF5015/D j35 fet Nippon capacitors MRF5015 equivalent	PDF
AN478A Abstract: AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN423/D SEMICONDUCTOR APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory utilizing the two port network	Original	AN423/D AN423 AN478A AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823	PDF
transistor motorola 359 Abstract: Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134 Text: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.	Original	MRF134/D MRF134 MRF134/D* transistor motorola 359 Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134	PDF
MRF5003 Abstract: "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors Text: MOTOROLA Order this document by MRF5003/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5003 N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF5003/D MRF5003 MRF5003 MRF5003/D* "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors	PDF

AN2657 Abstract: walkie-talkie NONLINEAR MODEL LDMOS military mobility DB-54003L-175 PD54003L-E T200 PD54003L microwave heating equations Text: AN2657 Application note An innovative verilog model for predicting LDMOS DC, small and large signal behavior Introduction To reduce the design cycle time and cost for wireless applications it is useful to have models that can help RF Engineers predict and simulate the behavior of RF power transistors.	Original	AN2657 AN2657 walkie-talkie NONLINEAR MODEL LDMOS military mobility DB-54003L-175 PD54003L-E T200 PD54003L microwave heating equations	PDF
j608 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the	Original	MRF6522 j608	PDF
j608 Abstract: 10R1 MRF6522-10R1 Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the	Original	MRF6522 MRF6522-10R1 j608 10R1 MRF6522-10R1	PDF
UNELCO Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF171/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF171 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.	Original	MRF171/D MRF171 MRF171/D*	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 15, 6/2009 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1	PDF
SELF vk200 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER	OCR Scan	MRF134 68-ohm AN215A SELF vk200	PDF
136y Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up	OCR Scan	MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068	PDF
transistor 7808 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance	OCR Scan	MRF134 MRF134, MRF134 68-ohm AN215A transistor 7808	PDF
2865002402 Abstract: 6435 fet MRF136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.	OCR Scan	RF136 RF136Y MRF136 MRF136Y AN215A DL110 2865002402 6435 fet	PDF

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S PARAMETERS OF RF TRANSISTOR Search Results

S PARAMETERS OF RF TRANSISTOR Result Highlights (5)

S PARAMETERS OF RF TRANSISTOR Datasheets Context Search

microwave transistor siemens bfp 420

MRF5007

AN569

Z7 DIODE

Untitled

mrf5015

Triode 805

MRF134

Untitled

"RF power MOSFETs"

j35 fet

AN478A

transistor motorola 359

MRF5003

AN2657

j608

j608

UNELCO

Untitled

Untitled

SELF vk200

136y

transistor 7808

2865002402