ACT212
Abstract: act512 ACT112 RELAY 66710
Text: CT ACT SUPER MINIATURE TWIN TYPE AUTOMOTIVE RELAY 17.4 .685 14 .551 13.5 .531 Twin type (8 terminals) 17.4 .685 7.2 .283 13.5 .531 CT RELAYS (ACT) FEATURES TYPICAL APPLICATIONS • Small & slim size Twin type: 17.4(L)14.0(W)13.5(H)mm .685(L).551(W).531(H)inch
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ACT212,
100ms
010611J
ACT212
act512
ACT112 RELAY
66710
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act212
Abstract: dc motor forward reverse control ACT112 ACT512 motor forward reverse control
Text: CT ACT SUPER MINIATURE TWIN TYPE AUTOMOTIVE RELAY 17.4 .685 14 .551 13.5 .531 Twin type (8 terminals) 7.2 .283 17.4 .685 13.5 .531 CT RELAYS (ACT) FEATURES TYPICAL APPLICATIONS • Small & slim size Twin type: 17.4(L)14.0(W)13.5(H)mm .685(L).551(W).531(H)inch
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ACT212,
100ms
300108J
act212
dc motor forward reverse control
ACT112
ACT512
motor forward reverse control
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22a ic
Abstract: IRGPH30S
Text: Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 13A
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IRGPH30S
400Hz)
O-247AC
22a ic
IRGPH30S
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IRF*260
Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
Text: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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91388B
O-254AA)
IRFM260
O-254AA.
MIL-PRF-19500
IRF*260
IRFM260
4.5V TO 100V INPUT REGULATOR
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IRGMC30U
Abstract: 90715
Text: PD -90715B IRGMC30U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses
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-90715B
IRGMC30U
O-254AA.
MIL-PRF-19500
IRGMC30U
90715
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TO-247AC Package
Abstract: 22a ic TO-3P Jedec package outline IRGPH30S S M 685 13A VCC80 irg*PH30S
Text: Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 13A
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IRGPH30S
400Hz)
O-247AC
TO-247AC Package
22a ic
TO-3P Jedec package outline
IRGPH30S
S M 685 13A
VCC80
irg*PH30S
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IRGMC40U
Abstract: No abstract text available
Text: PD -90717B IRGMC40U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses
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-90717B
IRGMC40U
O-254AA.
MIL-PRF-19500
IRGMC40U
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IRGMC40F
Abstract: bipolar transistor td tr ts tf
Text: PD -90716B IRGMC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses
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-90716B
IRGMC40F
O-254AA.
MIL-PRF-19500
IRGMC40F
bipolar transistor td tr ts tf
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bipolar transistor td tr ts tf
Abstract: IRF 260 N IRGMC30F
Text: PD -90714B IRGMC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-90714B
IRGMC30F
O-254AA.
MIL-PRF-19500
bipolar transistor td tr ts tf
IRF 260 N
IRGMC30F
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IRF 260 N
Abstract: MOSFET 1000v 30a IRGMC50F
Text: PD -90718B IRGMC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses
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-90718B
IRGMC50F
O-254AA.
MIL-PRF-19500
IRF 260 N
MOSFET 1000v 30a
IRGMC50F
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IRGMC50U
Abstract: No abstract text available
Text: PD -90719B IRGMC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses
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-90719B
IRGMC50U
O-254AA.
MIL-PRF-19500
IRGMC50U
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IRGMH40F
Abstract: S M 685 13A
Text: PD -91418B IRGMH40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-91418B
IRGMH40F
O-254AA.
MIL-PRF-19500
IRGMH40F
S M 685 13A
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251M1002
Abstract: ic 6301 22 J.63 capacitor
Text: To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video
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10B35
Abstract: 22 J.63 capacitor
Text: To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video
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Untitled
Abstract: No abstract text available
Text: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-94274A
IRG4MC50F
O-254AA.
MIL-PRF-19500
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IRG4MC40U
Abstract: No abstract text available
Text: PD -94305 IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 3kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency
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IRG4MC40U
40kHz,
200kHz
MIL-PRF-19500
IRG4MC40U
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Untitled
Abstract: No abstract text available
Text: P- 251 - E013 TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies.
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IRG4MC50F
Abstract: No abstract text available
Text: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-94274A
IRG4MC50F
O-254AA.
MIL-PRF-19500
IRG4MC50F
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Untitled
Abstract: No abstract text available
Text: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency
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-94273A
IRG4MC50U
O-254AA.
MIL-PRF-19500
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WE 251
Abstract: HOT 51011 W6 13A Diode 2306U
Text: TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video
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Untitled
Abstract: No abstract text available
Text: TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video
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IRG4MC50U
Abstract: No abstract text available
Text: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency
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-94273A
IRG4MC50U
O-254AA.
MIL-PRF-19500
IRG4MC50U
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Untitled
Abstract: No abstract text available
Text: PD -94305A IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency
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-94305A
IRG4MC40U
40kHz,
200kHz
O-254AA.
MIL-PRF-19500
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tyco transformer
Abstract: transformer PLC E87824
Text: r THIS MAWtMÖ e UNPUBLISHED. > iCOPYRIGHT RELEASED P M PUBUCAtiöN LOG ALL RIGHTS RESERVED. - _ BY TYCO ELECIRONKS DIST REVISIONS GZ 00 DESCRIPTION 0611 - 0 4 6 1 -0 2 50 ±.031 .1 8 8 DIA. 13AUG03 - NOTES-ALL LEADS 18AWG— UNLESS OTHERWISE SPECIFIED 1. DIMENSIONS FOR REFERENCE
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13AU603
18AWG-UNLESS
E87824
03C02K999
31UNB000
tyco transformer
transformer PLC
E87824
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