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    S 177 166 220 Search Results

    S 177 166 220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy

    S 177 166 220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC 789166

    Abstract: U14186E MCC wiring diagram to82 uPD789166 789166 PD789124A ti81 UPD789167GB uPD789167
    Text: DATA SHEET MOS INTEGRATED CIRCUITS µPD789166 A1 ,167(A1),176(A1),177(A1), 166(A2),167(A2),176(A2),177(A2) 8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD789166(A1), 789167(A1), 789166(A2), and 789167(A2) (hereafter, represented as µPD78916x(A1) and µPD78916x(A2) are members of the µPD789167 Subseries in the 78K/0S Series. The µPD789176(A1),


    Original     		PDF PD789166 PD78916x PD789167 78K/0S PD789176 PD78917x PD789177 NEC 789166 U14186E MCC wiring diagram to82 uPD789166 789166 PD789124A ti81 UPD789167GB uPD789167

    ti8148

    Abstract: 789166 uPD789166 U14186E NEC 789166 uPD789166Y uPD789167 UPD789166GB-8ES 789166Y uPD789850
    Text: DATA SHEET MOS INTEGRATED CIRCUITS µ , 176 A),177(A),166Y(A),167Y(A),176Y(A),177Y(A) 8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD789166, 789167, 789176, and 789177 (hereafter, represented as µPD78916x and µPD78917x) are


    Original     		PDF PD789166 PD789166, PD78916x PD78917x) PD789167, 78K/0S PD789166Y, 789167Y, 789176Y, 789177Y ti8148 789166 uPD789166 U14186E NEC 789166 uPD789166Y uPD789167 UPD789166GB-8ES 789166Y uPD789850

    UPD789167YGB-XXX-8ES

    Abstract: NEC 789166 U14186E
    Text: DATA SHEET MOS INTEGRATED CIRCUITS µ , 176 A),177(A),166Y(A),167Y(A),176Y(A),177Y(A) 8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD789166, 789167, 789176, and 789177 (hereafter, represented as µPD78916x and µPD78917x) are


    Original     		PDF PD789166 PD789166, PD78916x PD78917x) PD789167, 78K/0S PD789166Y, 789167Y, 789176Y, 789177Y UPD789167YGB-XXX-8ES NEC 789166 U14186E

    stmicroelectronics 402 transistor 650

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 PowerSO-10RF. PD57018ned stmicroelectronics 402 transistor 650 700B AN1294 PD57018S

    945 TRANSISTOR

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B AN1294 PD57018S

    Untitled

    Abstract: No abstract text available
    Text: INDEX NUMERICAL LISTING AND LOCATION OF MILL-MAX SOCKET ASSEMBLY NUMBERS WITH REFERENCE TO MILL-MAX PINS MILL-MAX SOCKET ASSEMBLY NUMBER MILL-MAX PIN # REF. PAGE # 101-XX-XXX-41-56XX00 104-XX-XXX-41-770X00 104-XX-XXX-41-780X00 110-XX-308-10-001X00 110-XX-314-10-001X00


    Original     		PDF 101-XX-XXX-41-56XX00 104-XX-XXX-41-770X00 104-XX-XXX-41-780X00 110-XX-308-10-001X00 110-XX-314-10-001X00 110-XX-314-10-002X00 110-XX-316-10-003X00 110-XX-XXX-41-001X00 110-XX-XXX-41-105000 110-XX-XXX-41-361000

    945 TRANSISTOR

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B AN1294 PD57018S

    945 TRANSISTOR

    Abstract: 700B PD57018 PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650

    Untitled

    Abstract: No abstract text available
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018

    Untitled

    Abstract: No abstract text available
    Text: B60/C60 Series Heat Sink System Ohmite introduces the power C series heat sink with improved Cam N Lock spring clip Pat. Pending . This series offers flexible, high performance and compact heat sink with exchangeable cam clip system for TO-220, TO-247, and


    Original     		PDF B60/C60 O-220, O-247, O-264 C60XX-058-AE CLA-T247-21E O-247 O-264 1-866-9-OHMITE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation


    Original     		PDF MRF177 MRF177

    S2-1111

    Abstract: No abstract text available
    Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package


    Original     		PDF PD57018-E PD57018S-E 945MHz PowerSO-10RF PD57018 PowerSO-10RF. S2-1111

    S2-1111

    Abstract: No abstract text available
    Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package


    Original     		PDF PD57018-E PD57018S-E 945MHz PowerSO-10RF PD57018 PowerSO-10RF. S2-1111

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc


    Original     		PDF MRF166C MRF166C MRF136, DV2820, BLF244, SD1902, ST1001

    TYN 208 equivalent

    Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
    Text: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A


    OCR Scan     		PDF 1N2977 N2979 N2980 N2983 N2984 ZC2800E ZC2810E ZC2811E ZC5800E CQ202-4N-2 TYN 208 equivalent bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent

    BTA08-600C equivalent

    Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
    Text: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B


    OCR Scan     		PDF Z0409ME Z0409MF Z0409NE Z0409NF Z0410BE Z0410BF Z0410DE Z0410DF Z0410ME Z0410MF BTA08-600C equivalent BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465

    BRX49 equivalent

    Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
    Text: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number


    OCR Scan     		PDF 1N270 1N276 1N283 1N295 1N457A 1N703A 1N705A 1N746A 1N747A 1N750A BRX49 equivalent FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 7100D IS12I J52lL IS12S21I

    ne46134

    Abstract: NE46134 equivalent ne461
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 7100D -12S2L OT-89) NE46134 equivalent

    MJ 15007 transistor

    Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent

    F 2452 mosfet

    Abstract: DV2820 0823L R K J 0822
    Text: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •


    OCR Scan     		PDF RF166C/D MRF166C MRF136, DV2820, BLF244, SD1902, ST1001 F 2452 mosfet DV2820 0823L R K J 0822

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF MRF177/D

    zt177

    Abstract: FT 1609 MOSFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed prim arily for wideband large -sig n a l output and driver from 30-500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts


    OCR Scan     		PDF IS22I MRF160 zt177 FT 1609 MOSFET

    0985

    Abstract: ma 1050
    Text: ERICSSON í PTF 10035 30 Watts, 1 . 9 - 2 . 0 GHz L D M O S Field Effect Transistor Description The 10035 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum


    OCR Scan     		PDF P4917-ND P5276 5801-PC 0985 ma 1050