DS-LM3S6965
Abstract: LM3S6965 MR24
Text: P RE LIMIN A RY LM3S6965 Microcontroller D ATA SHE E T D S -LM3S 6965 - 1 9 7 2 C o p yri g h t 2 0 0 7 L u mi n a ry Mi cro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR
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LM3S6965
32-bit
16-bit
DS-LM3S6965
MR24
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26180
Abstract: LM14250 LSH 26180 LSH 14250 LiMnO2 memoguard 6135-01-235-4168 LS 33600 6135997989851 BA5112U
Text: PRIMARY LITHIUM BATTERY SELECTOR GUIDE T H E B AT T E RY C O M PA N Y SAFT LITHIUM BATTERIES: EXCEEDING YOUR NEEDS For more than 30 years, Saft has pioneered, in Europe, North America and Asia/Pacific, the development and production of primary lithium cells
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1587H
Abstract: sdh demapper 1035H-1037H 1037h 1250H 1488h MX12 MX23 PM5365 9811J
Text: PM5365 TEMAP STANDARD PRODUCT DATASHEET ISSUE 3 HIGH DENSITY VT/TU MAPPER AND M13 MULTIPLEXER 11 :3 2: 49 PM PMC-1991148 ,1 1J an ua ry ,2 00 3 PM5365 to n Sa tu rd ay TEMAP DATA SHEET PROPRIETARY AND CONFIDENTIAL RELEASED ISSUE 3: SEPTEMBER 2001 Do wn lo
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PM5365
PMC-1991148
PM5365
1587H
sdh demapper
1035H-1037H
1037h
1250H
1488h
MX12
MX23
9811J
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Untitled
Abstract: No abstract text available
Text: P RE LIMIN A RY LM3S8962 Microcontroller D ATA SHE E T D S -LM 3S 8962 - 5 3 6 7 C opyri ght 2007-2009 Lumi nary Mi cro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR
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LM3S8962
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he w4
Abstract: No abstract text available
Text: h Chip Resist or Feat ures Small size and light weight Suit able for bot h flow and re-flow soldering Reduct ion of assembly cost s and mat ching wit h placement machines Applicat ion Aut omot ive indust ry indicat ors Medical and milit ary equipment , Radio and t ape recorders
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EPROM 2764-25
Abstract: 2764-25 INTEL MBM 2764-25 2764-30 eprom INTEL 2764 2764-30 EPROM 2764 2764 2764-20 2764 eprom
Text: UV ERASABLE FU JITSU 6 5 536-BIT READ 010200020101020089010000000102010001 ONLY MEMORY MBM 2764-20 MBM 2764-25 MBM 2764-30 J a n u a ry 198* E d itio n 4 .0 MOS 8 1 9 2 x 8 B IT U V ERASABLE A N D ELE C T R IC A L LY PROGRAM M ABLE READ O N L Y M EM O RY T h e F u jits u M B M 2 7 6 4 is a high speed 6 5 ,5 3 6 -b it s ta tic N -channel M OS
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65536-BIT
MOS8192x8BIT
536-bit
28-pin
32-pad
320sec
LCC-32C-A01)
EPROM 2764-25
2764-25
INTEL MBM 2764-25
2764-30 eprom
INTEL 2764
2764-30
EPROM 2764
2764
2764-20
2764 eprom
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Untitled
Abstract: No abstract text available
Text: 20 Watt HP Series F e a tu re s • High P ow er D ensity w ith E fficiencies to 86% Fuliy S hielded / Filtered D esign L ow est N oise O utputs, 50 m V P-P V e ry Low and S pecified R eflected R ipple C urrent V e ry Low 400 pF I/O C apacitance W a te r W a sh a b le S hielded C o p p er C ase
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Untitled
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V6445AWZJ -5, -6 HYPER PAGE MODE 536870912 - BIT 8388608 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V6445AWZJ is 8388608-word x 64-bit dynamic ram module. This consist of eight industry standard
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MH8V6445AWZJ
8388608-word
64-bit
MIT-DS-0098-0
25/FEB.
0-8600-Sa-Â
80988S8
21-60Z89SS
3Q01AI
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Untitled
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V645AWZJ -5, -6 HYPER PAGE MODE 536870912 - BIT 8388608 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V645AWZJ is 8388608-word x 64-bit dynamic ram module. This consist of eight industry standard
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MH8V645AWZJ
8388608-word
64-bit
MIT-DS-0121-0
25/FEB.
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8501501XA
Abstract: No abstract text available
Text: HARRIS R E F E R E N C E A PP N O T E 108 CM O S Serial C ontroller Interface J a n u a ry 1 9 9 2 F eatu res P in o u ts 2 8 L E A D D IP • S ingle C hip U A R T/BR G TOP VIEW • DC to 16M Hz 1M B aud O p e ra tio n • C ry s ta l o r E x te rn a l C lo c k In p u t
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10OKHz
8501501XA
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COMPLEMENTA
Abstract: cd4013bm
Text: CD4013BM/CD4013BC National ÆjÉ Semiconductor CD4013BM/CD4013BC Dual D Flip-Flop General Description Features The CD4013B dual D flip-flop is a monolithic complementa ry MOS CMOS integrated circuit constructed with N- and P-channel enhancement mode transistors. Each flip-flop
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CD4013BM/CD4013BC
CD4013BM/CD4013BC
CD4013B
COMPLEMENTA
cd4013bm
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MB87S
Abstract: MB8795B block diagram of xerox machine TDR4
Text: P re lim in a ry Advanced Products FU JITS U • MB8795B Ethernet Data Link Controller Description The Fujitsu MB8795B Ethernet Data Link Controller EDLC manufactured with Fujitsu’s Advanced CMOS Technology, is designed for Ethernet* Local Area Network Systems and to
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MB8795B
MB502A
B8795B
MB8795B
64-LEAD
PGA-64C-A02)
MB87S
block diagram of xerox machine
TDR4
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Untitled
Abstract: No abstract text available
Text: 74HC/HCT257 V. MSI FEATURES • • • • TYPICAL Non-inverting data path 3-state outputs interface directly with system bus Output capability: bus driver *CC cate9 ° rY: MSI GENERAL DESCRIPTION The 74HC/HCT257 are high-speed Si-gate CMOS devices and are pin
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74HC/HCT257
74HC/HCT257
72878S3
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Untitled
Abstract: No abstract text available
Text: 156 1 -ry p p DÄC Series ISTOKO Antenna Element for 2.4 GHz DAC Series 3.3 Features • • • • • • • Vertical Polarization reception Low profile 6.5m m max O m ni-directionai in azim uth Low interference design Central feeding point term inal
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DAC2450CT1
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Untitled
Abstract: No abstract text available
Text: 93479 National Semiconductor 93479 256 x 9-Bit Static Random Access Memory General Description Features The 93479 is a 2304-bit read/write Random Access Memo ry RAM , organized as 256 words by nine bits per word. It is ideally suited for scratchpad, small buffer and other applica
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2304-bit
3479A--35
3479A--
22-Pln
3-TL/D/9675-8
TL/D/9675-11
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74HCTLS
Abstract: No abstract text available
Text: Zytrex ZXS4HCTLS ZX74HCTLS Februa ry 1985 74A Dual D-Type Positive-Edge-Triggered Flip-Flops with Preset and Clear OBJECTIVE SPECIFICATIONS Features Description • Function, pin-out, speed and drive compatibility with 54/74LS logic family These devices contain two independent positive-edgetriggered D-type flip-flops. Each flip-flop has its own
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ZX54HCTLS
ZX74HCTLS
54/74LS
74HCTLS:
54HCTLS:
ZX74HCTLS
74HCTLS
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93479ADC
Abstract: 93479ADMQB 93479ALMQB 93479DC 93479DMQB 93479LMQB E28A J22A
Text: 93479 KgM National æm Semiconductor 93479 256 x 9-Bit Static Random Access Memory General Description Features The 93479 is a 2304-bit read/write Random Access Memo ry RAM , organized as 256 words by nine bits per word. It is ideally suited for scratchpad, small buffer and other applica
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2304-bit
3479Aâ
22-Pin
TL/D/9675-10
TL/D/9675-11
93479ADC
93479ADMQB
93479ALMQB
93479DC
93479DMQB
93479LMQB
E28A
J22A
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Untitled
Abstract: No abstract text available
Text: KMM5368003CK/CKG KM M 53681 0 3 C K / C K G DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KM M 53681 0 3 C K / C K G R ev is io n H is to ry Ver si on 0.1 ( Nov., 19 97 ) : Changed the mode of parity check component from EDO to FP, refer to
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KMM5368003CK/CKG
8Mx36
KMM53680
8Mx36bits
300mil)
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93479ADC
Abstract: 93479ADMQB 93479ALMQB 93479DC 93479DMQB 93479LMQB E28A J22A 96755
Text: 93479 ZWÄ National ÉüA Semiconductor 93479 256 x 9-Bit Static Random Access Memory General Description Features The 93479 is a 2304-bit read/write Random Access Memo ry RAM , organized as 256 words by nine bits per word. It is ideally suited for scratchpad, small buffer and other applica
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2304-bit
3479Aâ
22-Pin
28-Pin
TL/D/9675-10
TL/D/9675-11
93479ADC
93479ADMQB
93479ALMQB
93479DC
93479DMQB
93479LMQB
E28A
J22A
96755
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LR2000
Abstract: LR3000 AX2620 MIPS R3000A R2000 mips processor graphx
Text: F tB 3 LSI LOGIC LR33020 GraphX Processor P re lim in a ry Introdu ction The LR33020 GraphX P ro ce sso r - a m ember of LSI Logic's LR33000 fam ily of Self-Em bedding p ro ce sso rs - offers an integrated M IPScom patible P ro cesso r, a Graphics C o processor
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LR33020
LR33000
10-pixel
32-bit
LR2000
LR3000
AX2620
MIPS R3000A
R2000 mips processor
graphx
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Untitled
Abstract: No abstract text available
Text: •PRODUCT TABLE ry p t; AA 1101F A A 1101W A A 1102W A A 1 t1 1 C A A 1111R AA1112H A A 2202S A A 2222S A A 2434D A A 2533D A A 3365S A A 3822K A A 3889S A A 5304S A A 5305S A A 5307S A A 5334S A A 5335S AA5351K A A 5362X A A 5385X AA7351K A A A101 AA A103
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1101F
1111R
AA1112H
2202S
2222S
2434D
2533D
3365S
3822K
3889S
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KA-59-318
Abstract: KINGS KN-99-35 kings 1065-1 KA-91 KC-59-291 KN-89-31 m9ka UG-88C KA-59-231 ug89c
Text: PART NUMBER INDEX Kings Part Number Series Page No. Description Kings Part Number Series Description SKINGS Page No. Kings Part Humber Series Page No. Description C W -123A /U BNC A c c e ss o ry 15 KC -1 9-110 | bn c 8 lkh d Ja c k 10 K C -79-90 BNC : Blkhd Receptacle
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-123A
-952D
KA-19-151
KA-59-69
KA-59-103
KA-59-171
KA-59-231
KA-59-291
KA-59-318
KA-59-343
KINGS KN-99-35
kings 1065-1
KA-91
KC-59-291
KN-89-31
m9ka
UG-88C
ug89c
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DIGITAL GATE EMULATOR USING 8085
Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S
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AMI6G16S
AMI6G33S
AMI6G41S
AMI6G70S
AMI6G106S
AMI6G150S
AMI6G202S
AMI6G333
AMI6G471
AMI6G603
DIGITAL GATE EMULATOR USING 8085
8086 microprocessor book by A K RAY
180 nm CMOS standard cell library AMI
IC1732
DL021
M91C360
ami 0.6 micron
3682D
ami equivalent gates
ic/TDA7388 equivalent
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moh268
Abstract: No abstract text available
Text: S ta n d a r d P r o d u c t PM I I PMC-Sierra, Inc. 1^^ PRELIMINARY INFORMATION P M 5361 TU P P SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR PM5361 TUPP SONET/SDH T R I B U T A R Y UNI T P A Y L O A D PROCESSOR P r e l i m i na ry Issue PMC-Sierra, Inc.
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PM5361
920526S7
920102S8
moh268
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