k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B2G1646Q
96FBGA
k4b2g1646q
ddr3 2133
K4B2G1646Q-BCK0
K4B2G1646Q-BCMA
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IS46TR
Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16128A/AL,
IS43/46TR82560A/AL
256Mx8,
128Mx16
cycles/64
cycles/32
60A/AL
78-ball
IS46TR
IS43TR82560A
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
"2Gb DDR3 SDRAM"
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Untitled
Abstract: No abstract text available
Text: W632GU6KB 16M 8 BANKS 16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
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W632GU6KB
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Untitled
Abstract: No abstract text available
Text: W631GU6KB 8M 8 BANKS 16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
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W631GU6KB
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NT5CB64M16AP-CF
Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature Write Leveling 1.5V ± 0.075V JEDEC Standard Power Supply OCD Calibration 8 Internal memory banks (BA0- BA2) Dynamic ODT (Rtt_Nom & Rtt_WR) Differential clock input (CK, )
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NT5CB256M4AN
NT5CB128M8AN
NT5CB64M16AP
60-Ball
84-Ball
NT5CB64M16AP-CF
nt5cb64m16
NT5CB64M16AP-CG
NT5CB64M16AP
nanya NT5CB64M16AP
NT5CB64m
NT5CB64M16AP-BE
nt5cb64m16ap-dh
MPR 20 20 CF RESISTOR
NT5CB64M16AP-AC
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W631GG6KB-12
Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
Text: W631GG6KB 8M 8 BANKS 16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
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W631GG6KB
W631GG6KB-12
W631GG6KB-15
W631GG6KB15A
DDR3 DIMM SPD JEDEC
24si
9x13
W631GG6KB15K
w631gg6k
W631GG6KB12I
W631GG6KB-15I
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W631GU8KB15K
Abstract: No abstract text available
Text: W631GU8KB 16M 8 BANKS 8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
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W631GU8KB
W631GU8KB15K
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W632GG6KB
Abstract: W632GG6KB15I
Text: W632GG6KB 16M 8 BANKS 16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
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W632GG6KB
W632GG6KB15I
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Untitled
Abstract: No abstract text available
Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features Signal Integrity JEDEC DDR3 Compliant - Configurable DS for system compatibility
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512M8CN
256M16CP
DDR3L-1866
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W3J512M32G
Abstract: M41K256M32
Text: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800, 1,066, 1333 Mb/s 74% Space savings vs. FBGA Packages:
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W3J512M32G-XBX
W3J512M32G
W3J512M36/40G
x36/40
M41K256M32
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Untitled
Abstract: No abstract text available
Text: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M64K-XPBX
W3J512M64K-XLBX
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M41K256M32
Abstract: No abstract text available
Text: W3J512M32K-XBX W3J512M36K T -XB2X W3J512M36/40K(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800, 1,066, 1333 Mb/s 74% Space savings vs. FBGA Packages:
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W3J512M32K-XBX
W3J512M36K
W3J512M36/40K
M41K256M32
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Untitled
Abstract: No abstract text available
Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M64G-XPBX
W3J512M64G-XLBX
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Untitled
Abstract: No abstract text available
Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M64G-XPBX
W3J512M64G-XLBX
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Untitled
Abstract: No abstract text available
Text: W3J128M72K-XLBX W3J128M72K-XPBX *ADVANCED 1GB – 128M x 72 DDR3 SDRAM – 1.35V – 375 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800; 1,066; 1,333; 1,600* Mb/s 35%* Space savings vs. FBGA Packages: Reduced part count
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W3J128M72K-XLBX
W3J128M72K-XPBX
1600Mb/s
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NT5CB256
Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800
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NT5CB512M8CN
NT5CB256M16CP
NT5CC512M8CN
NT5CC256M16CP
DDR3/L-1600-CL11
DDR3-1866-CL13
DDR3-2133-CL14
NT5CB256
NT5CC256M16CP-DI
NT5CB256M16
NT5CB256m
NT5CB512M8CN-DI
NT5CB256M16CP-DI
NT5CC512M8CN-DI
NT5CC512M8CN-DII
NT5CB256M16CP-EK
NT5CC512M8
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K4B4G0846C
Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446C
K4B4G0846C
78FBGA
K4B4G0846C
K4B4G0846C-BCMA
K4B4G0446C-BCK0
DDR3-1866
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K4B4G0846B-HYK0
Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Text: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446B
K4B4G0846B
78FBGA
K4B4G0846B-HYK0
K4B4G0846B-HYH9
K4B4G0446B-HYK0
K4B4G0446B-HYH9
09 06 115 2932
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K4B4G0846a
Abstract: No abstract text available
Text: Rev. 1.11, Jan. 2011 K4B4G0446A K4B4G0846A 4Gb A-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446A
K4B4G0846A
78FBGA
K4B4G0846a
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k4b2g0446d-hyh9
Abstract: No abstract text available
Text: Rev. 1.01, Nov. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B2G0446D
K4B2G0846D
78FBGA
k4b2g0446d-hyh9
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K4B1G1646G
Abstract: K4B1G1646G-BI samsung dimm DDR3 SPD k4b1g1646g
Text: Rev. 1.0, Nov. 2010 K4B1G1646G 1Gb G-die DDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B1G1646G
K4B1G1646G
K4B1G1646G-BI
samsung dimm DDR3 SPD k4b1g1646g
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K4B2G1646B
Abstract: Samsung 2GB DDR3 K4B2G1646B-HI
Text: industrial 2Gb DDR3 SDRAM K4B2G1646B 2Gb B-die DDR3 SDRAM Specification 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant Industrial Temp. -40 to 95°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4B2G1646B
K4B2G1646B
Samsung 2GB DDR3
K4B2G1646B-HI
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K4B1G0846G-BYH9
Abstract: No abstract text available
Text: Rev. 1.03, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-die DDR3L SDRAM 78 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B1G0446G
K4B1G0846G
K4B1G0846G-BYH9
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K4B2G0846D
Abstract: K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D K4B2G0446D-HCH9
Text: Rev. 1.1, Sep. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B2G0446D
K4B2G0846D
78FBGA
K4B2G0846D
K4B2G0846D-HCK0
k4b2g0846
K4B2G0846D-HCMA
K4B2G0446D-HCH9
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