RO4403
Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the
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6010LM,
RO3003
RO3035
RO3203
RO3006
RO3206
RO3010
RO3210
RO4003C
RO4350B
RO4403
Rogers RO4003
rt/duroid 5880
RO4450F
rogers 5880
RO3006
rogers laminate materials
RO4450B
RO3210
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rogers 5880
Abstract: SMP1371-087LF s1988 SMP137 SMP1345-087LF
Text: Applications • Series/shunt elements in high power HF/VHF/ UHF transmit/receive T/R switches High Power PIN Diodes Features Description • Very low thermal resistance for excellent power handling: 40 W C/W typical • Low series resistance – SMP1324-087LF:
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SMP1324-087LF,
SMP1371-087LF
SMP1302-085LF
SMP1324-087LF
SMP1345-087LF
BRO399-11A
rogers 5880
s1988
SMP137
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rogers 5880
Abstract: UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A • High power gain
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M3D392
BLF647
OT540A
SCA73
613524/03/pp16
rogers 5880
UT70-25
1008CS-102XKBC
BLF647
transistor 2164
transistor 2001 H1
rf transistor smd pages
2222 595
smd transistor w1
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smd transistor A6
Abstract: transistor SMD A6
Text: DISCRETE SEMICONDUCTORS DAT M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain
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M3D392
BLF647
OT540A
SCA73
613524/03/pp16
smd transistor A6
transistor SMD A6
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22 pf TEKELEC
Abstract: BLF647 transistor 2001 H1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION
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M3D392
BLF647
BLF647
OT540A
MBK777
budgetnum/printrun/ed/pp15
22 pf TEKELEC
transistor 2001 H1
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TEKELEC
Abstract: 1800 ldmos sot540a transistor 2001 H1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION
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M3D392
BLF647
BLF647
OT540A
MBK777
budgetnum/printrun/ed/pp15
TEKELEC
1800 ldmos
sot540a
transistor 2001 H1
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Surface Mount
Abstract: BT-0030SM
Text: MINIATURE SURFACE MOUNT BIAS TEE BT-0030SM Features Frequency Range 20 MHz to 30 GHz 1 Watt RF Power Handling Miniature Surface Mount Package Reflow Solderable Electrical Specifications - Specifications guaranteed from -55 to +100C, measured in a 50-Ohm system
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BT-0030SM
50-Ohm
BT-0030SM-1
BT-0030SM-2
Surface Mount
BT-0030SM
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Untitled
Abstract: No abstract text available
Text: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and
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CGHV1F025S
CGHV1F025S
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Surface Mount
Abstract: BT-0034SM
Text: MINIATURE SURFACE MOUNT BIAS TEE BT-0034SM Features Frequency Range: 500 kHz to 34 GHz Frequency Range with External Coil: 5 kHz to 34 GHz 1 Watt RF Power Handling Miniature Surface Mount Package Reflow Solderable Electrical Specifications - Specifications guaranteed from -55 to +100C, measured in a 50-Ohm system
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BT-0034SM
50-Ohm
BT-0034SM-1
BT-0034SM-2
Surface Mount
BT-0034SM
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smd transistor 581
Abstract: 2222 581 16641 27291 BLF1822-10 C19 transistor MGW655
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 16 2002 Mar 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • Designed for broadband operation HF to 2.2 GHz
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M3D381
BLF1822-10
OT467C
SCA74
613524/03/pp16
smd transistor 581
2222 581 16641
27291
BLF1822-10
C19 transistor
MGW655
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smd transistor 581
Abstract: 2222-581 BLF1822-10 TEKELEC 302
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V
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M3D381
BLF1822-10
OT467C
SCA75
613524/04/pp16
smd transistor 581
2222-581
BLF1822-10
TEKELEC 302
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MADL-0110
Abstract: ODS-30 MADL01 MADL-011009-01340W
Text: MADL-0110 Series Silicon PIN Limiter Diodes V1 Chip Outline Features • • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation
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MADL-0110
ODS-30
MADL01
MADL-011009-01340W
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Untitled
Abstract: No abstract text available
Text: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and
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CGHV1F025S
CGHV1F025S
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Philips Capacitor
Abstract: smd code HF transistor Philips Capacitor datasheet CRS15 smd transistor marking C14 transistor SMD MARKING CODE HF transistor smd marking code c3 Transistor SMD marking code NV c5 marking TRANSISTOR SMD nf c1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V
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M3D381
BLF1822-10
BLF1822-10
OT467C
15-Aug-02)
Philips Capacitor
smd code HF transistor
Philips Capacitor datasheet
CRS15
smd transistor marking C14
transistor SMD MARKING CODE HF
transistor smd marking code c3
Transistor SMD marking code NV c5
marking TRANSISTOR SMD nf c1
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NE3517S03-A
Abstract: NE3517S03-T1C NE3517S03 HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1D
NE3517S03-T1C-A
NE3517S03-T1D-A
NE3517S03-A
PG10787EJ01V0DS
NE3517S03-A
NE3517S03
HS350
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Untitled
Abstract: No abstract text available
Text: MA4L Series Silicon PIN Limiters RoHS Compliant M/A-COM Products Rev. V12 Features • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation
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Untitled
Abstract: No abstract text available
Text: MA4L Series Silicon PIN Limiters RoHS Compliant M/A-COM Products Rev. V11 Features • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation
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RT DUROID 5880
Abstract: NE3512 NE3512S02-T1D-A PG10592EJ01V0DS HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3512S02
NE3512S02-T1C
NE3512S02-T1D
NE3512S02-T1C-A
NE3512S02-T1D-A
NE3512S02-A
PG10592EJ01V0DS
RT DUROID 5880
NE3512
PG10592EJ01V0DS
HS350
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TB246
Abstract: No abstract text available
Text: A April 1, 20155 T TB246 Frequenccy=136-174MHz Pout=100W Gaain=14dB Vdss=12.5Vdcc Id dq=0.8A Efficciency=63% % SR726 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m April 1, 2015 120.0 17.0 90.0 16.0 60.0
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TB246
136-174MHz
SR726
TB246
136MHz,
150MHz,
1111N150BW501
1111N241BW501
1111N360BW501
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NE3514S02
Abstract: NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 NE3514S02-T1D NE3514S02-T1C-A ir260 N-CHANNEL HJ-FET NE3514S02-T1D-A
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3514S02
NE3514S02-T1C
NE3514S02-T1D
NE3514S02-T1C-A
NE3514S02-T1D-A
NE3514S02-A
25Cted,
PG10593EJ01V0DS
NE3514S02
NE3514
NE3514S02-A
transistor "micro-x" "marking" 3
RT DUROID 5880
ir260
N-CHANNEL HJ-FET
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tip 134
Abstract: No abstract text available
Text: MA4L Series Silicon PIN Limiter Chips RoHS Compliant M/A-COM Products Rev. V9 Features • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven and Reliable Silicon Nitride Passivation
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MA4L401-30
Abstract: MA4L011-186 ma4l011 MA4L401-132 rogers 5880 MA4L062-134 1056 coil gold detector MA4L011-30 SMD MARKING CODE HF
Text: MA4L Series Silicon PIN Limiter Diodes V13 Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant
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rogers 5880
Abstract: No abstract text available
Text: MA4L Series Silicon PIN Limiter Diodes V14 Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant
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C16dJ
Abstract: smd transistor G18 smd transistor rc3 rogers 5880 BLF861 uhf tv power transistor 250 w smd L19 TRANSISTOR SMD w2 UT70-25 multilayer ceramic capacitor
Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 Sep 02 Philips Sem iconductors 2000 Feb 18 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 FEATURES PINNING - SOT54QA • High power gain PIN
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BLF861
OT540A
SQT540A
C16dJ
smd transistor G18
smd transistor rc3
rogers 5880
BLF861
uhf tv power transistor 250 w
smd L19
TRANSISTOR SMD w2
UT70-25
multilayer ceramic capacitor
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