Rogers 4350
Abstract: Rogers 4350 datasheet GETEK FR4 Rogers microstrip 3003 rogers laminate materials rogers MTC1204 3003 Multilink Technology Corporation ROSENBERGER
Text: MIXED SIGNAL INTEGRATED CIRCUIT PRODUCTS Multilink Tech Note - 102 Printed Circuit Board Design Considerations for the MTC1207/MTC1204 The MTC1207 Multiplexer/Clock Multiplier Unit and MTC1204 Demultiplexer/Clock and data Recovery chip are SONET/SDH OC-192/STM-64 mixed signal integrated circuits which contain 10
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MTC1207/MTC1204
MTC1207
MTC1204
OC-192/STM-64
appnote102
Rogers 4350
Rogers 4350 datasheet
GETEK FR4
Rogers microstrip 3003
rogers laminate materials
rogers
3003
Multilink Technology Corporation
ROSENBERGER
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intel 3003
Abstract: FR4 Prepreg XEB60009 XEB72353 N5V2 mcb C20 j1 3003 testing of mcb circuit diagram HCB CONNECTORS Rogers 3003
Text: XEK66700 XFP Reference Design Kit Preliminary Datasheet Product Features • ■ ■ XFP Reference Design Kit in compliance with the XFP specification - Appendix A consisting of: — Host System Compliance Test Board — Module Compliance Test Board Fully characterised compliance test kit for
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XEK66700
XEK66700
XEB60009
XEB72353
intel 3003
FR4 Prepreg
N5V2
mcb C20
j1 3003
testing of mcb circuit diagram
HCB CONNECTORS
Rogers 3003
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arc welder circuit diagram
Abstract: high frequency welder circuit diagram welder circuit diagram DRFM stripline power combiner splitter noise jammer b201008 VO3284 arc welder circuit VO3262
Text: APPLICATION NOTES VO3260 and VO3250 VCO series Wideband Fundamental Voltage Controlled Oscillator General Description Features The VO3260 and the VO3250 VCO is drop-in Voltage Controlled Oscillators intended for any application where size and performance is important. The VO3250 is tuned for an
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VO3260
VO3250
arc welder circuit diagram
high frequency welder circuit diagram
welder circuit diagram
DRFM
stripline power combiner splitter
noise jammer
b201008
VO3284
arc welder circuit
VO3262
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db9-hf
Abstract: 32K243-40m RS-232 to i2c converter rs232 to I2c 142701-2 crystal 3.68mhz maxim rs232 i2c pic16f628 182-009-212-161 32K243 fiber TRANSCEIVER CIRCUIT DIAGRAM rs232
Text: Reference Design: HFRD-18.0 Rev. 7; 11/09 REFERENCE DESIGN High-Frequency XFP Host Board Includes Integrated RS-232 to I2C Conversion Maxim Integrated Products Reference Design: High-Frequency XFP Host Board Table of Contents High Frequency Reference Design (HFRD) 18.0
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HFRD-18
RS-232
26mil
50mil
10mil
20mil
12mil
db9-hf
32K243-40m
RS-232 to i2c converter
rs232 to I2c
142701-2
crystal 3.68mhz
maxim rs232 i2c pic16f628
182-009-212-161
32K243
fiber TRANSCEIVER CIRCUIT DIAGRAM rs232
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Resistors
Abstract: Thin-Film Technologies 0402 Thin Film Technologies atceramics
Text: AT C U LT R A - B R O A D B A N D R E S I S T I V E P R O D U C T S ATC 504L Series UBRTM Ultra-Broadband Resistors Features: • Frequency Range: DC to 20 GHz • EIA 0402 Case Size • Power Rating: 125 mW • Operating Temperature: -40°C to +125°C • 100% Laser Trimming for
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TOSA ROsa
Abstract: Rogers 3003
Text: AT C U LT R A - B R O A D B A N D R E S I S T I V E P R O D U C T S ATC 504L Series UBRTM Ultra-Broadband Resistors Features: • Frequency Range: DC to 20 GHz • EIA 0402 Case Size • Power Rating: 125 mW • Operating Temperature: -40°C to +125°C • 100% Laser Trimming for
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Untitled
Abstract: No abstract text available
Text: AT C U LT R A - B R O A D B A N D R E S I S T I V E P R O D U C T S ATC 504L Series UBRTM Ultra-Broadband Resistors Features: • Frequency Range: DC to 20 GHz • EIA 0402 Case Size • Power Rating: 125 mW • Operating Temperature: -40°C to +125°C • 100% Laser Trimming for
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TOSA ROsa
Abstract: No abstract text available
Text: AT C U LT R A - B R O A D B A N D R E S I S T I V E P R O D U C T S ATC 504L Series UBRTM Ultra-Broadband Resistors Features: • Frequency Range: DC to 20 GHz • EIA 0402 Case Size • Power Rating: 125 mW • Operating Temperature: -40°C to +125°C • 100% Laser Trimming for
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845 motherboard circuit
Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
845 motherboard circuit
DS1046
NIPPON CAPACITORS
470-860 mhz Power amplifier w
470-860 mhz Power amplifier 5 w
Nippon chemi
845 motherboard
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MRF377HR3
Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377HR3
MRF377HR5
NIPPON CAPACITORS
DS1046
DVB-T acpr
845 motherboard circuit
Nippon chemi
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845 motherboard circuit
Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
Text: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377/D
MRF377
MRF377R3
MRF377R5
MRF377
MRF377R3
845 motherboard circuit
0603HC-10NXJB Coilcraft
Rogers 3006
NIPPON CAPACITORS
DVB-T acpr
dvbt transmitter
3A412
MRF377R5
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transistor amplifier 1ghz 1400 watts
Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
transistor amplifier 1ghz 1400 watts
nippon capacitors
0603HC-10NXJB
Nippon chemi
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nippon capacitors
Abstract: dvbt transmitter j564 Nippon chemi
Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
nippon capacitors
dvbt transmitter
j564
Nippon chemi
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
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MRF377H
Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi
Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
MRF377HR3
MRF377H
dvbt transmitter
resistor kyocera
845 motherboard circuit
nippon capacitors
MRF377
2508051107Y0
64 QAM Transmitter
Nippon chemi
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MRF377H
Abstract: nippon capacitors J628 Nippon chemi
Text: Freescale Semiconductor Technical Data MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
MRF377H
nippon capacitors
J628
Nippon chemi
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0805J
Abstract: nippon capacitors J564 Nippon chemi
Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
0805J
nippon capacitors
J564
Nippon chemi
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581 transistor motorola
Abstract: nippon capacitors 2508051107Y0 dvbt transmitter 3A412 MRF377 MRF377R3 MRF377R5 J263
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377/D
MRF377
MRF377R3
MRF377R5
MRF377
MRF377R3
581 transistor motorola
nippon capacitors
2508051107Y0
dvbt transmitter
3A412
MRF377R5
J263
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marking WB4
Abstract: NIPPON CHEMI nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
MRF377H
marking WB4
NIPPON CHEMI
nippon capacitors
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2DS1047
Abstract: nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
MRF377
2DS1047
nippon capacitors
Nippon chemi
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Fujitsu GaAs FET application note
Abstract: FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz
Text: APPLICATION NOTE NUMBER 010 High-Power GaAs FET Device Bias Considerations The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices safely. However these guidelines are not a complete insurance against oscillations since
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MTT-28,
Fujitsu GaAs FET application note
FLL1500IU-2C
TC701
fujitsu GHz gaas fet
RG capacitor
uhf microwave fet
fujitsu power amplifier GHz
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Keithley 2400
Abstract: GM260Y5V104Z10 HP8722ES keithley 2400 schematic 5541a XFP EVALUATION BOARD 10.7 Gbps WMIF0021000AJ keithley 2400 circuit diagram MSA300 AN-635
Text: AN-635 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Using the ADN2820 Evaluation Board By Eric Braun INTRODUCTION This application note describes the use of the ADN2820
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AN-635
ADN2820
ADN2820
ADN2820nto
E03564
Keithley 2400
GM260Y5V104Z10
HP8722ES
keithley 2400 schematic
5541a
XFP EVALUATION BOARD 10.7 Gbps
WMIF0021000AJ
keithley 2400 circuit diagram
MSA300
AN-635
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06033C103KAT2A
Abstract: 12063C105KAT2A EAR99 JESD22-A114 RO4003 TGA2524-SM
Text: TGA2524-SM Ku-Band Power Amplifier Applications • • Point-to-Point Radio Ku-band Sat-Com QFN 3x3 mm 16L Product Features • • • • • • • Functional Block Diagram 16 Frequency Range: 12 – 16 GHz Power: 26.5 dBm Psat, 26 dBm P1dB Gain: 23 dB, good gain flatness with regulation
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TGA2524-SM
TGA2524-SM
06033C103KAT2A
12063C105KAT2A
EAR99
JESD22-A114
RO4003
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Untitled
Abstract: No abstract text available
Text: TGA2524-SM Ku-Band Power Amplifier Applications • • Point-to-Point Radio Ku-band Sat-Com QFN 3x3 mm 16L Product Features • • • • • • • Functional Block Diagram 16 Frequency Range: 11.3 – 16 GHz Power: 26.5 dBm Psat, 26 dBm P1dB Gain: 23 dB, good gain flatness with regulation
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TGA2524-SM
TGA2524-SM
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