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    VENKEL LTD HPTF0805-RN-1211AT

    High Power Thin Film CR;0805;1/8W;�10PPM;1.21K;�0.05%
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    Venkel Ltd. HPTF0805-RN-1211AT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF0805-RN-1211DT

    High Power Thin Film CR;0805;1/8W;�10PPM;1.21K;�0.5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF0805-RN-1211DT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF0805-RN-1211BT

    High Power Thin Film CR;0805;1/8W;�10PPM;1.21K;�0.1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF0805-RN-1211BT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF0805-RN-1211CT

    High Power Thin Film CR;0805;1/8W;�10PPM;1.21K;�0.25%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF0805-RN-1211CT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF0805-RN-1211UT

    High Power Thin Film CR;0805;1/8W;�10PPM;1.21K;�0.01%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF0805-RN-1211UT Reel 5 Weeks, 5 Days 5,000
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    RN1211 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN1211 Toshiba Silicon NPN Epitaxial Type (PCT Process) Transistor Original PDF
    RN1211 Toshiba NPN Transistor Original PDF
    RN1211 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    RN1211 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RN1210

    Abstract: RN1211 RN2210 RN2211
    Text: RN1210,RN1211 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1210,RN1211 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original
    RN1210 RN1211 RN2210, RN2211 RN1210 RN1211 RN2210 RN2211 PDF

    RN1210

    Abstract: RN1211 RN2210 RN2211
    Text: RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    RN1210 RN1211 RN2210, RN2211 RN1211 RN2210 RN2211 PDF

    RN1210

    Abstract: RN1211 RN2210 RN2211
    Text: RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    RN1210 RN1211 RN2210 RN2211 RN1211 RN2211 PDF

    RN1210

    Abstract: RN1211 RN2210 RN2211
    Text: RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    RN1210 RN1211 RN2210, RN2211 RN1211 RN2210 RN2211 PDF

    RN1210

    Abstract: RN1211 RN2210 RN2211
    Text: RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    RN1210 RN1211 RN2210, RN2211 RN1211 RN2210 RN2211 PDF

    RN1210

    Abstract: RN1211 RN2210 RN2211
    Text: RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    RN1210 RN1211 RN2210, RN2211 RN1211 RN2210 RN2211 PDF

    RN1211

    Abstract: No abstract text available
    Text: RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original
    RN1210 RN1211 RN2210, RN2211 RN1211 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


    Original
    050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original
    2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original
    PDF

    bwd R3076

    Abstract: rk7002b MDB35 transformer 27M20 c639 ph S43 sot223 AD5815 ATMEL256 medion ICS952013
    Text: 5 MSI 4 3 2 1 MS-1002 Ver:0C DTR MS-1002 System Block Diagram D D DT CPU PRESCOTT PG.2~3 TV C PG.26 FSB800 16M 16M ATi M10 P/C 16M 16M 16M 16M SIS648FX AGP 8X/66Mz PG.32~35 MiniPCI 802.11b PG.13 PG.5~7 BORADCOM GIGA LAN MMC/SM/SD/MS B PG.11~12 C AC LINK UDMA 133


    Original
    MS-1002 400MHz/533MHz/800MHz. FSB800 DDR400/DDR333/DDR266 8X/66Mz SIS648FX 400MHz MuTIOL/133Mz PCI/33MHz bwd R3076 rk7002b MDB35 transformer 27M20 c639 ph S43 sot223 AD5815 ATMEL256 medion ICS952013 PDF

    0723

    Abstract: l1998
    Text: T O S H IB A RN1210,RN1211 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1210, RN1211 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design


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    RN1210 RN1211 RN1210, RN2210, RN2211 0723 l1998 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN1210,RN1211 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1210, RN1211 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan
    RN1210 RN1211 RN1210, RN2210, RN2211 PDF

    RW221

    Abstract: No abstract text available
    Text: RN2210,2211 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 4.2MAX FEATU RES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary t:o RN1210, RN1211


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    RN2210 RN1210, RN1211 RN2211 RW2211 RW221 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


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    2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan
    2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    RN2226

    Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
    Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package


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    2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015 PDF

    RN1417

    Abstract: rn4601
    Text: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404


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    RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2210,RN2211 T O S H IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2210, RN2211 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan
    RN2210 RN2211 RN2210, RN1210, RN1211 PDF

    rr1206

    Abstract: EN1602 RN10U RN1509 RN1510 RN1511 RN1601 RN1603 RN1604 RN1605
    Text: - 328 - mfctìS m % tt RN1509 Pc* VcBO V m h (Ta=25‘ C,*EPIÍTc=25‘ C) , £ (V) (A) (W) (min) (max) SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 30 SW/INV/D 50 50 0.1 0.3 0.1 50 SW/INV/D 50


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    RN1509 RN1510 RN1511 RN1601 EN1602 RN1603 RN1604 RN1201 RN2201 10K/10K rr1206 RN10U RN1605 PDF

    RN1211

    Abstract: No abstract text available
    Text: T O S H IB A RN2210,RN2211 T O SH IB A TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2210, RN2211 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS 4.2MAX. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan
    RN2210 RN2211 RN2210, RN1210, RN1211 PDF