2N4393
Abstract: marking 18w sot23 sot-23 18w 4392 SST4393 4391 jfet jfet transistor 2n4391 marking N03 TO92 to92 MARKING N02 2N4391
Text: N-Channel JFET Switch CORPORATION 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS
|
Original
|
2N4391
2N4393
PN4391
PN4393
SST4391
SST4393
2N4391)
100pA
10VAC
-65oC
marking 18w sot23
sot-23 18w
4392
SST4393
4391 jfet
jfet transistor 2n4391
marking N03 TO92
to92 MARKING N02
2N4391
|
PDF
|
18W SOT23
Abstract: marking 18w sot23
Text: N-Channel JFET Switch LLC 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS
|
Original
|
2N4391
2N4393
PN4391
PN4393
SST4391
SST4393
2N4391)
100pA
10VAC
-65oC
18W SOT23
marking 18w sot23
|
PDF
|
2N4391
Abstract: SST4391 marking 18w sot23 4392 2N4393 jfet transistor 2n4391 sot-23 18w 4391 jfet marking N03 TO92 SOT23 MARKING N01
Text: N-Channel JFET Switch LLC 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS
|
Original
|
2N4391
2N4393
PN4391
PN4393
SST4391
SST4393
2N4391)
100pA
10VAC
-65oC
2N4391
SST4391
marking 18w sot23
4392
jfet transistor 2n4391
sot-23 18w
4391 jfet
marking N03 TO92
SOT23 MARKING N01
|
PDF
|
AN9321
Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
Text: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
|
Original
|
RF1K49092
AN9321
MS-012AA
RF1K49092
RF1K4909296
TB334
|
PDF
|
AN9321
Abstract: MS-012AA RF1K49092 RF1K4909296 TB334 AN9322
Text: RF1K49092 Data Sheet January 2002 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,
|
Original
|
RF1K49092
AN9321
MS-012AA
RF1K49092
RF1K4909296
TB334
AN9322
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using
|
Original
|
RF1K49092
|
PDF
|
1E14
Abstract: 2E12 FSS230R4 JANSR2N7400
Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
JANSR2N7400
FSS230R4
1E14
2E12
FSS230R4
JANSR2N7400
|
PDF
|
relay 12v 100A
Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
JANSR2N7396
FSL230R4
relay 12v 100A
1E14
2E12
FSL230R4
JANSR2N7396
|
PDF
|
MOSFET S1A
Abstract: datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322
Text: RF3V49092, RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated
|
Original
|
RF3V49092,
RF3S49092SM
0A/10A,
MOSFET S1A
datasheet RF3V49092
MO-169AB
RF3S49092SM
RF3S49092SM9A
RF3V49092
AN9322
|
PDF
|
kp-98
Abstract: Pspice AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196 TB334
Text: RF1K49211 Data Sheet August 1999 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET • 7A, 12V • rDS ON = 0.020Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature
|
Original
|
RF1K49211
RF1K49211
kp-98
Pspice
AN7254
AN7260
AN9321
AN9322
MS-012AA
RF1K4921196
TB334
|
PDF
|
MO-169AB
Abstract: RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs
Text: RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in
|
Original
|
RF3S49092SM
0A/10A,
MO-169AB
RF3S49092SM
RF3S49092SM9A
N-Channel UltraFET Power MOSFETs
|
PDF
|
1E14
Abstract: 2E12 FSF250R4 JANSR2N7406
Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
JANSR2N7406
FSF250R4
1E14
2E12
FSF250R4
JANSR2N7406
|
PDF
|
1E14
Abstract: 2E12 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A0R FSL923A0R1 Rad Hard in Fairchild for MOSFET
Text: FSL923A0D, FSL923A0R Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
|
Original
|
FSL923A0D,
FSL923A0R
-200V,
O-205AF
254mm)
FSL923A0R
1E14
2E12
FSL923A0D
FSL923A0D1
FSL923A0D3
FSL923A0R1
Rad Hard in Fairchild for MOSFET
|
PDF
|
1E14
Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
FSL9230R
1E14
2E12
FSL9230D
FSL9230D1
FSL9230D3
FSL9230R1
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
JANSR2N7396
FSL230R4
|
PDF
|
1E14
Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
FSYA250D,
FSYA250R
1E14
2E12
FSYA250D
FSYA250D1
FSYA250D3
FSYA250R
FSYA250R1
FSYA250R3
|
PDF
|
1E14
Abstract: 2E12 FSF9250R4 JANSR2N7404
Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
JANSR2N7404
FSF9250R4
-200V,
1E14
2E12
FSF9250R4
JANSR2N7404
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
JANSR2N7404
FSF9250R4
-200V,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
JANSR2N7400
FSS230R4
|
PDF
|
1E14
Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460
|
Original
|
JANSR2N7396
FSL230R4
R2N73
1E14
2E12
FSL230R4
JANSR2N7396
Rad Hard in Fairchild for MOSFET
5200BR
|
PDF
|
RF1K49093
Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses
|
Original
|
RF1K49093
RF1K49093
AN9321
AN9322
MS-012AA
RF1K4909396
TB334
|
PDF
|
AN7254
Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49090 RF1K4909096 TB334
Text: RF1K49090 Data Sheet August 1999 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET Power MOSFET File Number 3985.6 Features • 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses
|
Original
|
RF1K49090
AN7254
AN7260
AN9321
AN9322
MS-012AA
RF1K49090
RF1K4909096
TB334
|
PDF
|
RF1K4909396
Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses
|
Original
|
RF1K49093
RF1K4909396
delta motor
RF1K49093
AN9321
AN9322
MS-012AA
TB334
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs
|
OCR Scan
|
JANSR2N7404
-200V,
MIL-STD-750,
MIL-S-19500,
-160V,
100ms;
500ms;
|
PDF
|
