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    RJP65S04DWA-80#W0 Renesas Electronics Corporation IGBT 650V 50A Wafer Visit Renesas Electronics Corporation

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    Untitled

    Abstract: No abstract text available
    Text: Datasheet RJP65S04DWT / RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0200 Rev.2.00 Oct 09, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • High speed Switching


    Original     		PDF RJP65S04DWT RJP65S04DWA R07DS0821EJ0200 RJP65S04DWT-80 RJP65S04DWA-80

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP65S04DWT/RJP65S04DWA 650V - 50A - IGBT Application: Inverter R07DS0821EJ0002 Rev.0.02 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed Switching


    Original     		PDF RJP65S04DWT/RJP65S04DWA R07DS0821EJ0002 RJP65S04DWT-80 RJP65S04DWA-80