RJP63K2DPPM0T2 Search Results

RJP63K2DPPM0T2 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP63K2DPP-M0#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)

RJP63K2DPPM0T2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ	Original	RJP63K2DPP-M0 R07DS0468EJ0200 O-220FL PRSS0003AF-A) O-220FL)	PDF
RJP63k2 Abstract: rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2 Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ	Original	RJP63K2DPP-M0 O-220FL R07DS0468EJ0200 PRSS0003AF-A) O-220FL) RJP63k2 rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ

Original

RJP63K2DPP-M0 R07DS0468EJ0200 O-220FL PRSS0003AF-A) O-220FL)

PDF

RJP63k2

Abstract: rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2
Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ