RJP60F7DPK Search Results

RJP60F7DPK Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP60F7DPK-00#T0		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)

RJP60F7DPK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJU60C Abstract: No abstract text available Text: Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F7DPK R07DS1001EJ0100 PRSS0004ZE-A RJU60C

Catalog Datasheet

MFG & Type

PDF

Document Tags

RJU60C

Abstract: No abstract text available
Text: Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology

Original

PDF

RJP60F7DPK R07DS1001EJ0100 PRSS0004ZE-A RJU60C