RJP30E3DPK Search Results

RJP30E3DPK Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP30E3DPK-M0#T0		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)

RJP30E3DPK Price and Stock

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Rochester Electronics LLC RJP30E3DPK-M2-T0 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E3DPK-M2-T0	Bulk			28	1 - 10 - 100 $11.1 1000 $11.1 10000 $11.1	Buy Now
Renesas Electronics Corporation RJP30E3DPK-M2#T0 RJP30E3DPK-M2#T0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJP30E3DPK-M2#T0		29,098		29	1 - 10 - 100 $12.5375 1000 $11.3375 10000 $11.3375	Buy Now
Rochester Electronics	RJP30E3DPK-M2#T0		29,098		1	1 $10.67 10 $10.67 100 $10.03 1000 $9.07 10000 $9.07	Buy Now

RJP30E3DPK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJP30E3 Abstract: rjp30e3dpk RJP30e Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 rjp30e3dpk RJP30e
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A
RJP30E3 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram