RJP30E2DPK Search Results

RJP30E2DPK Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP30E2DPK-M0#T0		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-3PSG, /Tube

RJP30E2DPK Price and Stock

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Rochester Electronics LLC RJP30E2DPK-M0-T0 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E2DPK-M0-T0	Bulk			38	1 - 10 - 100 $8.08 1000 $8.08 10000 $8.08	Buy Now
Renesas Electronics Corporation RJP30E2DPK-M0#T0 Silicon N Channel IGBT High Speed Power Switching
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJP30E2DPK-M0#T0		6,515		40	1 - 10 - 100 $9.125 1000 $8.25 10000 $8.25	Buy Now
Rochester Electronics	RJP30E2DPK-M0#T0		6,515		1	1 $7.77 10 $7.77 100 $7.3 1000 $6.6 10000 $6.6	Buy Now

RJP30E2DPK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
rjp30e2 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2
RJP30E2 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A RJP30E2
rjp30e2 Abstract: rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2 Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2 rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram