RJP30 Search Results

RJP30 Result Highlights (5)

Part	Manufacturer	Description
RJP3056DPP-00#T2	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP30E3DPK-M0#T0	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP3055DPP-00#T2	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP30E2DPP-M0#T2	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube
RJP3057DPK#T0	Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)

RJP30 Price and Stock

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Rochester Electronics LLC RJP30E3DPP-M0-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E3DPP-M0-T2	Bulk			98	1 - 10 - 100 $3.07 1000 $3.07 10000 $3.07	Buy Now
Rochester Electronics LLC RJP30H1DPD-A0-Q2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30H1DPD-A0-Q2	Bulk			204	1 - 10 - 100 - 1000 $1.48 10000 $1.48	Buy Now
Rochester Electronics LLC RJP30E4DPE-00-J3 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E4DPE-00-J3	Bulk			107	1 - 10 - 100 - 1000 $2.81 10000 $2.81	Buy Now
Rochester Electronics LLC RJP30E2DPP-M0-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E2DPP-M0-T2	Bulk			38	1 - 10 - 100 $8.08 1000 $8.08 10000 $8.08	Buy Now
Rochester Electronics LLC RJP30L4DPE-00-J3 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30L4DPE-00-J3	Bulk			163	1 - 10 - 100 - 1000 $1.85 10000 $1.85	Buy Now

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RJP30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TO-220FL Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) TO-220FL
rjp30 Abstract: RJP30E Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) rjp30 RJP30E
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ	Original	PDF	RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A
RJP30h1 Abstract: rjp30H RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT High Speed Power Switching Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.	Original	PDF	RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30h1 rjp30H RJP30H1DPD Silicon N Channel IGBT High Speed Power Switching
RJP30E3 Abstract: rjp30e3dpk RJP30e Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 rjp30e3dpk RJP30e
RJP30E3 Abstract: RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30 Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPP-M0 O-220FL R07DS0353EJ0200 PRSS0003AF-A) O-220FL) RJP30E3 RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30
RJP30K3 Abstract: RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30 Text: Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage VCE(sat) = 1.1V typ	Original	PDF	RJP30K3DPP-M0 O-220FL R07DS0501EJ0100 PRSS0003AF-A) O-220FL) RJP30K3 RJp30K RJP30K3DPP-M0 rjp30k3dpp TEST68 rjp30
RJP30H1DPD Abstract: rjp30h1 rjp30 rjp30H Text: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series High speed switching: tr = 80 ns typ., tf = 150 ns typ.	Original	PDF	RJP30H1DPD R07DS0465EJ0200 PRSS0004ZJ-A O-252) RJP30H1DPD rjp30h1 rjp30 rjp30H
PRSS0003AF-A Abstract: RJP30H1 rjp30H Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.	Original	PDF	RJP30H1DPP-M0 R07DS0466EJ0200 O-220FL PRSS0003AF-A) O-220FL) PRSS0003AF-A RJP30H1 rjp30H
rjp30h1 Abstract: rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30 Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.	Original	PDF	RJP30H1DPP-M0 O-220FL R07DS0466EJ0200 PRSS0003AF-A) O-220FL) rjp30h1 rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30
rjp30e2 Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200 Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPP-M0 O-220FL R07DS0347EJ0200 PRSS0003AF-A) O-220FL) rjp30e2 rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30
rjp30e2 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A
RJP30E2 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A RJP30E2

Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)
RJP30E3 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)
RJP30H2 Abstract: rjp30h RJP30H2D RJP30H2dpk R07DS0467EJ0200 Rjp30 Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ	Original	PDF	RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A RJP30H2 rjp30h RJP30H2D RJP30H2dpk Rjp30
rjp30e2 Abstract: rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2 Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2 rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

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RJP30 Search Results

RJP30 Result Highlights (5)

RJP30 Price and Stock

Rochester Electronics LLC RJP30E3DPP-M0-T2

Rochester Electronics LLC RJP30H1DPD-A0-Q2

Rochester Electronics LLC RJP30E4DPE-00-J3

Rochester Electronics LLC RJP30E2DPP-M0-T2

Rochester Electronics LLC RJP30L4DPE-00-J3

RJP30 Datasheets Context Search

TO-220FL

rjp30

Untitled

RJP30h1

RJP30E3

RJP30E3

RJP30K3

RJP30H1DPD

PRSS0003AF-A

rjp30h1

rjp30e2

rjp30e2

Untitled

RJP30E2

Untitled

RJP30E3

Untitled

RJP30H2

rjp30e2

RJP63k2

rjh3047

RJJ0319DSP

rjp6065

rjp3053