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    RJK60S2DPD-00#J2 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S2DPD 600V - 8A - SJ MOS FET High Speed Power Switching R07DS0741EJ0001 Rev.0.01 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.53 Ω typ. (at ID = 4 A, VGS = 10 V, Ta = 25°C) Outline RENESAS Package code: PRSS0004ZG-A


    Original     		RJK60S2DPD R07DS0741EJ0001 PRSS0004ZG-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S2DPD 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0741EJ0003 Rev.0.03 Nov 30, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		RJK60S2DPD R07DS0741EJ0003 PRSS0004ZG-A PDF

    matters

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S2DPD 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0741EJ0002 Rev.0.02 May 01, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A


    Original     		RJK60S2DPD R07DS0741EJ0002 PRSS0004ZG-A matters PDF