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    RJK6006DPD-00#J2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 5A 1600Mohm Mp-3A/To-252 Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RJK6006DPD-00#J2

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    RJK6006DPD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK6006DPD-00#J2 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 5A MP3A Original PDF

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    PRSS0004ZG-A

    Abstract: RJK6006DPD
    Text: Preliminary Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Features • Low on-state resistance RDS on = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline


    Original     		RJK6006DPD REJ03G1935-0100 PRSS0004ZG-A temperatur9044 PRSS0004ZG-A RJK6006DPD PDF

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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Features • Low on-state resistance RDS on = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline


    Original     		RJK6006DPD REJ03G1935-0100 PRSS0004ZG-A Sto9044 PDF