RJK03C1DPB Search Results

RJK03C1DPB Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK03C1DPB-00#J5		Renesas Electronics Corporation	Nch Single Power Mosfet 30V 60A 2.2Mohm Lfpak, LFPAK, /Embossed Tape

RJK03C1DPB Price and Stock

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Renesas Electronics Corporation RJK03C1DPB-00-J5 MOSFET N-CH 30V 60A LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK03C1DPB-00-J5	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	RJK03C1DPB-00-J5	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	RJK03C1DPB-00-J5	Digi-Reel			1	1 $1.58 10 $1.58 100 $1.58 1000 $1.58 10000 $1.58	Buy Now

RJK03C1DPB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK03C1DPB-00#J5		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A LFPAK		Original	PDF

RJK03C1DPB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJK03C1DPB Abstract: No abstract text available Text: Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance	Original	PDF	RJK03C1DPB REJ03G1830-0310 PTZZ0005DA-A RJK03C1DPB
Untitled Abstract: No abstract text available Text: Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance	Original	PDF	RJK03C1DPB REJ03G1830-0310 PTZZ0005DA-A
RJK03C1DPB Abstract: No abstract text available Text: Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance	Original	PDF	RJK03C1DPB REJ03G1830-0310 PTZZ0005DA-A RJK03C1DPB
HAT1125H Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient	Original	PDF	uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
RJK03C1DPB Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF