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    RJK0204DPA Search Results

    RJK0204DPA Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0204DPA-00#J53 Renesas Electronics Corporation P Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK0204DPA-00#J5A Renesas Electronics Corporation P Channel Power MOSFET Visit Renesas Electronics Corporation
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    RJK0204DPA Price and Stock

    Rochester Electronics LLC RJK0204DPA-00-J53

    MOSFET N-CH 25V 50A 8WPAK
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    DigiKey RJK0204DPA-00-J53 Bulk 296
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    Rochester Electronics LLC RJK0204DPA-WS-J53

    N-CHANNEL POWER MOSFET
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    DigiKey RJK0204DPA-WS-J53 Bulk 296
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    Renesas Electronics Corporation RJK0204DPA-00#J53

    Trans MOSFET N-CH Si 25V 50A 8-Pin WPAK EP T/R
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    Verical RJK0204DPA-00#J53 3,000 327
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    Rochester Electronics RJK0204DPA-00#J53 3,000 1
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    Renesas Electronics Corporation RJK0204DPA-WS#J53

    RJK0204DPA-WS#J53
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    Verical RJK0204DPA-WS#J53 1,950 327
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    Rochester Electronics RJK0204DPA-WS#J53 1,950 1
    • 1 $0.9778
    • 10 $0.9778
    • 100 $0.9191
    • 1000 $0.8311
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    Bristol Electronics RJK0204DPA-09-J53 128
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    RJK0204DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK0204DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 50A WPAK Original PDF

    RJK0204DPA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0204DPA 25V, 50A, 2.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0944EJ0400 Rev.4.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current


    Original
    RJK0204DPA R07DS0944EJ0400 PWSN0008DE-A PDF

    RJK0204DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original
    RJK0204DPA REJ03G1922-0210 PWSN0008DC-A current9044 RJK0204DPA PDF

    RJK0204DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0204DPA 25 V, 50 A, 2.7 m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0944EJ0300 Previous: REJ03G1922-0210 Rev.3.00 Nov 12, 2012 Features •       High speed switching Capable of 4.5 V gate drive


    Original
    RJK0204DPA R07DS0944EJ0300 REJ03G1922-0210) PWSN0008DC-B RJK0204DPA PDF

    RJK0204DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original
    RJK0204DPA REJ03G1922-0210 PWSN0008DC-A Chann9044 RJK0204DPA PDF

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original
    RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 PDF