RGS SOT23 Search Results

RGS SOT23 Result Highlights (5)

Part	Manufacturer	Description
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
ISL28114SOT23EVAL1Z	Renesas Electronics Corporation	Single General Purpose Micropower, RRIO Op Amp Evaluation Board
ISL28113SOT23EVAL1Z	Renesas Electronics Corporation	Single General Purpose Micropower, RRIO Op Amp Evaluation Board
ISL54103IHZ-T7A	Renesas Electronics Corporation	DDC Accelerator (DDCA), SOT23, /Reel
EL6204CWZ-T7A	Renesas Electronics Corporation	Laser Driver Oscillator, SOT23, /Reel

RGS SOT23 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
N-Channel jfet 100V depletion Abstract: transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature	Original	PDF	LS320 200mW N-Channel jfet 100V depletion transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch
LS320 Abstract: RGs sot23 Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature	Original	PDF	LS320 200mW LS320 RGs sot23
BC237 Abstract: 2N7000 Fet Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR	Original	PDF	2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet
2N3819 fet Abstract: BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ	Original	PDF	2N7002LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 fet BC237
BC237 Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ	Original	PDF	VN2222LL 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ	Original	PDF	L2N7002LT1G 236AB)
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Abstract: 2N7002LT1G 2N7002LT3G 2N7002L 2N7002LT1 2N7002LT3 sot-23 MARKING CODE 70.2 2N7002L-D marking code 702 SOT23 Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW VDGR 60	Original	PDF	2N7002L OT-23 2N7002L/D Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 2N7002LT1G 2N7002LT3G 2N7002L 2N7002LT1 2N7002LT3 sot-23 MARKING CODE 70.2 2N7002L-D marking code 702 SOT23
2N7002LT1G Abstract: 2N7002L 2N7002LT1 2N7002LT3 2N7002LT3G Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW	Original	PDF	2N7002L OT-23 2N7002L/D 2N7002LT1G 2N7002L 2N7002LT1 2N7002LT3 2N7002LT3G
date code IEC 62 Abstract: bc107a pin out BC237 bf256c Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage	Original	PDF	VN0610LL 226AA) secon218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 date code IEC 62 bc107a pin out BC237 bf256c
LRK7002LT1 Abstract: LRK7002L marking 702 sot-23 marking 702 sot-23 MARKING CODE 70.2 sot 23 70.2 Sot-23 MARKING 702 Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts LRK7002LT1 N–Channel SOT–23 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.)	Original	PDF	LRK7002LT1 236AB) OT-23 LRK7002LT1-4/4 LRK7002LT1 LRK7002L marking 702 sot-23 marking 702 sot-23 MARKING CODE 70.2 sot 23 70.2 Sot-23 MARKING 702
SOT-353 MARKING 8v Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23 Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ	Original	PDF	L2N7002WT1G SC-70) C330mm 360mm SOT-353 MARKING 8v diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
2N7002 MARKING Abstract: 2N7002 MARKING 702 2N7002 Text: WEITRON 2N7002 Small Signal MOSFET N-Channel 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE SOT-23 2 SOURCE Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0MΩ) VDGR 60 V Drain Current	Original	PDF	2N7002 OT-23 08-Jul-09 OT-23 2N7002 MARKING 2N7002 MARKING 702 2N7002
ss129 Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101 Text: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3	Original	PDF	Q62702-S568 E6327: Q67000-S243 E6433: OT-23 ss129 SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
RGs 14 Abstract: RGS 13/1 Text: Preliminary Data BSS 159 SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Marking Ordering Code BSS 159 50 V 0.16 A 8Ω SOT-23 SEs Q67000-S321 Maximum Ratings	Original	PDF	OT-23 Q67000-S321 RGs 14 RGS 13/1

Q67050-T6 Abstract: RGs sot23 Text: BSS 159 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Ordering Code BSS 159 50 V 0.16 A 8Ω SOT-23 Q67050-T6 Maximum Ratings Parameter Symbol	Original	PDF	OT-23 Q67050-T6 May-30-1996 Q67050-T6 RGs sot23
Q67050-T7 Abstract: No abstract text available Text: BSS 169 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Ordering Code BSS 169 100 V 0.12 A 12 Ω SOT-23 Q67050-T7 Maximum Ratings Parameter	Original	PDF	OT-23 Q67050-T7 May-30-1996 Q67050-T7
BSS84 Abstract: BSS84 SOT23 Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 SEPTEMBER 1995 ✪ PARTMARKING DETAIL SP S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current ID -130 mA Pulsed Drain Current	Original	PDF	BSS84 -100mA BSS84 BSS84 SOT23
Untitled Abstract: No abstract text available Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 SEPTEMBER 1995 ✪ PARTMARKING DETAIL SP S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current ID -130 mA Pulsed Drain Current	Original	PDF	BSS84 -100mA
BSS138 Abstract: Q67000-S566 E6327 Q67000-S216 marking BSs Text: BSS 138 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 Ω SOT-23 SSs Type BSS 138 BSS 138 Ordering Code Q67000-S566	Original	PDF	OT-23 Q67000-S566 Q67000-S216 E6327 E6433 BSS138 Q67000-S566 E6327 Q67000-S216 marking BSs
marking sSH sot-23 Abstract: E6327 Q67000-S007 marking 119 marking BSs Text: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information	Original	PDF	OT-23 Q67000-S007 E6327 Sep-13-1996 marking sSH sot-23 E6327 Q67000-S007 marking 119 marking BSs
marking BSs sot-23 Abstract: Q67000-S132 E6327 marking BSs SOT23 MARKING SBs Text: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information	Original	PDF	OT-23 Q67000-S132 E6327 Sep-13-1996 marking BSs sot-23 Q67000-S132 E6327 marking BSs SOT23 MARKING SBs
SAs SOT-23 marking Abstract: marking BSs SAS SOT23 transistor 45 f 123 marking "BSs" E6327 Q62702-S512 Q67000-S245 bss 108 marking SAs SOT23 Text: BSS 123 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6Ω SOT-23 SAs Type BSS 123 BSS 123 Ordering Code Q62702-S512	Original	PDF	OT-23 Q62702-S512 Q67000-S245 E6327 E6433 Sep-13-1996 SAs SOT-23 marking marking BSs SAS SOT23 transistor 45 f 123 marking "BSs" E6327 Q62702-S512 Q67000-S245 bss 108 marking SAs SOT23
Q67000-S007 Abstract: E6327 marking BSs marking sSH sot-23 Text: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information	Original	PDF	OT-23 Q67000-S007 E6327 Q67000-S007 E6327 marking BSs marking sSH sot-23
Untitled Abstract: No abstract text available Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 -SEPTEMBER 1995 O PARTMARKING DETAIL— SP ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT -50 V mA mA Continuous Drain Current •d -130 Pulsed Drain Current	OCR Scan	PDF	BSS84 Tamtp25Â -100mA 100mA 300lis.

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RGS SOT23 Search Results

RGS SOT23 Result Highlights (5)

RGS SOT23 Datasheets Context Search

N-Channel jfet 100V depletion

LS320

BC237

2N3819 fet

BC237

Untitled

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

2N7002LT1G

date code IEC 62

LRK7002LT1

SOT-353 MARKING 8v

2N7002 MARKING

ss129

RGs 14

Q67050-T6

Q67050-T7

BSS84

Untitled

BSS138

marking sSH sot-23

marking BSs sot-23

SAs SOT-23 marking

Q67000-S007

Untitled