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    RGP30J DIODE Search Results

    RGP30J DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    RGP30J DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE rgp30m

    Abstract: diode RGP30G
    Text: RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction


    Original     		PDF RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M 22-B106 AEC-Q101 DO-201AD DIODE rgp30m diode RGP30G

    Untitled

    Abstract: No abstract text available
    Text: Not Available for New Designs, Use RGP30B, RGP30D, RGP30J, RGP30K BY296P thru BY299P Vishay General Semiconductor Soft Recovery Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability


    Original     		PDF RGP30B, RGP30D, RGP30J, RGP30K BY296P BY299P 22-B106 2002/95/EC 2002/96/EC DO-201AD

    RGP30M

    Abstract: RGP30G RGP30J JESD22-B102D J-STD-002B RGP30A
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 µA


    Original     		PDF RGP30A RGP30M MIL-S-19500 DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 RGP30M RGP30G RGP30J JESD22-B102D J-STD-002B

    RGP30M

    Abstract: No abstract text available
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than


    Original     		PDF RGP30A RGP30M MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 RGP30M

    RGP30M

    Abstract: rgp30b RGP3 rgp30d
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 3.0 A 50 V to 1000 V 125 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C d* e t n Pate


    Original     		PDF RGP30A RGP30M DO-201AD MIL-S-19500 DO-201AD, 19-Sep-05 RGP30M rgp30b RGP3 rgp30d

    RGP30J

    Abstract: Rgp30m
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 µA


    Original     		PDF RGP30A RGP30M MIL-S-19500 2002/95/EC 2002/96/EC DO-201AD, 08-Apr-05 RGP30J Rgp30m

    rgp30m

    Abstract: RGP30J
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 3.0 A 50 V to 1000 V 125 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C d* e t n Pate


    Original     		PDF RGP30A RGP30M DO-201AD MIL-S-19500 DO-201AD, 08-Apr-05 rgp30m RGP30J

    RGP30J-HE3

    Abstract: RGP30J JESD22-B102 J-STD-002 RGP30A RGP30M
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than


    Original     		PDF RGP30A RGP30M MIL-S-19500 2002/95/EC 2002/96/EC DO-201AD 18-Jul-08 RGP30J-HE3 RGP30J JESD22-B102 J-STD-002 RGP30M

    Untitled

    Abstract: No abstract text available
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 A


    Original     		PDF RGP30A RGP30M MIL-S-19500 22-B106 AEC-Q101 DO-201AD 2002/95/EC 2002/96/EC 18-Jul-08

    RGP30J

    Abstract: RGP30G
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction • Fast switching for high efficiency


    Original     		PDF RGP30A RGP30M MIL-S-19500 22-B106 DO-201AD AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. RGP30J RGP30G

    J-STD-002

    Abstract: RGP30A RGP30M
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction • Fast switching for high efficiency


    Original     		PDF RGP30A RGP30M MIL-S-19500 22-B106 DO-201AD AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 J-STD-002 RGP30M

    Untitled

    Abstract: No abstract text available
    Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction • Fast switching for high efficiency


    Original     		PDF RGP30A RGP30M MIL-S-19500 22-B106 DO-201AD AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC.

    rgp10j diode

    Abstract: FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode
    Text: Axial Diode Series FAST RECOVERY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C


    Original     		PDF 1N4933 DO-41 1N4934 1N4935 1N4936 DO-15 RGP15M rgp10j diode FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode

    MBR1620CT

    Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
    Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)


    Original     		PDF 5KE10 5KE100 5KE11 5KE110 5KE12 5KE120 5KE13 5KE130 5KE15 5KE150 MBR1620CT 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    PG06J

    Abstract: diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a FEP30JT
    Text: C£X>G e n e r a l v S e m ic o n d u c t o r END-USEAPPLICATIONS '¿•it V BH I END-USE INPUT BRIDGE (A) O U TPUT/ SNUBBER Output DF08M W08G KBP08M GBU4K GBU6K GBU8K RGP10J RGP15J RGP30J FEP6JT FEP16JT FEP30JT 40V RGP10K RGP15K RGP30K 1.0A 1.5A 3.0A 5.0A


    OCR Scan     		PDF DF04M KBP04M DF06M KBP06M RGP10J RGP15J RGP30J FEP16JT FEP30JT SB040 PG06J diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a

    GP25D

    Abstract: RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M
    Text: GLASS PASSIVATED FAST RECOVERY SILICON SUPER DIODE typ e PIV Peak inverse V o lta g e M AX AVG R e c tifie d C urre n t H a lfW a ve Res. Load 60Hz IO "> TA VPK AA V MAX FWD Peak M A X Reverse S urge C urre n t C urre n t 1 60H Z i " PIV V o lta ge S up erim p ose d


    OCR Scan     		PDF DO-41 RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M RECOVERY/DO-201AD RGP25A GP25D RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M

    RGP15G diode

    Abstract: diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener DIODE RG3j DIODE RG4A D0204AP G1854
    Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECO VERY SILIC O N RECT IFIERS continued 2.0 1.5 IM A ] D0204AP DO 15 PKG TYPE ( (Ì GP20 % r \i D0204AP 00201AP (k <^ VRRM (volts) D0204AP l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P


    OCR Scan     		PDF D0204AP D0201AP RGP15A RGP20A RGP15B RGP20B BY296P RGP15D RGP15G diode diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener DIODE RG3j DIODE RG4A G1854

    d137 smd diode

    Abstract: rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135
    Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECOVERY SILICON RECTIFIERS continued 2.0 1.5 IMA] D0204AP DO15 PKG TYPE ( (Ì D0204AP GP20 % (k \i r 00201AP D0204AP <^ VRRM (volts) l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P 200 RGP15D


    OCR Scan     		PDF D0204AP 00201AP D0204AP RGP15J RGP15K RGP15M BYV95C BYV96D BYV96E d137 smd diode rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135

    MDA2501

    Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
    Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090


    OCR Scan     		PDF 1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1