TA49372
Abstract: 20N60A4 equivalent
Text: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGT1S20N60A4S9A
HGT1S20N60A4S9A
150oC.
100kHz
200kHz
125oC
TA49372
20N60A4 equivalent
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Untitled
Abstract: No abstract text available
Text: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGT1S20N60A4S9A
HGT1S20N60A4S9A
150oC.
100kHz
200kHz
125oC
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RG 2006 10A 600V
Abstract: HTP20-600 triac 20a rms triac to220
Text: HTP20-600 HTP20-600 600V 20A TRIAC VDRM = 600 V IT RMS = 20A FEATURES 2.T2 Symbol Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=20A) High Commutation dv/dt 3.Gate 1.T1 1. T1 2. T2 3. Gate General Description The TRIAC HTP20-600 is suitable for AC switching application, phase
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HTP20-600
HTP20-600
50/60Hz,
O-220)
RG 2006 10A 600V
triac 20a rms
triac to220
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RG 2006 10A 600V
Abstract: GF10NB60SD STGF10NB60SD JESD97 SCHEMATIC igbt dimmer SCHEMATIC dimmer igbt gf10nb60 SCHEMATIC dimmer control
Text: STGF10NB60SD N-channel 10A - 600V - TO-220FP PowerMESH IGBT General features Type VCES STGF10NB60SD 600V IC VCE sat (Max)@ 25°C @100°C <1.8V 7A • Hight input impedance (voltage driven) ■ Low on-voltage drop ■ High current capability ■ Co-packaged with turboswitch™ antiparallel
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STGF10NB60SD
O-220FP
RG 2006 10A 600V
GF10NB60SD
STGF10NB60SD
JESD97
SCHEMATIC igbt dimmer
SCHEMATIC dimmer igbt
gf10nb60
SCHEMATIC dimmer control
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P10NC60HD
Abstract: STGB10NC60HD STGP10NC60HD JESD97 p10nc60 B10NC60HD to-247 to-220
Text: STGB10NC60HD STGP10NC60HD N-CHANNEL 600V - 10A - TO-220 - D2PAK VERY FAST PowerMESH IGBT General features VCE sat IC (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A 3 3 1 • Lower on-voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction
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STGB10NC60HD
STGP10NC60HD
O-220
O-220
P10NC60HD
STGB10NC60HD
STGP10NC60HD
JESD97
p10nc60
B10NC60HD
to-247 to-220
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gp10nc60hd
Abstract: gp10nc60 GB10NC60HD STGP10NC60HD
Text: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1
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STGB10NC60HD
STGP10NC60HD
O-220
O-220
gp10nc60hd
gp10nc60
GB10NC60HD
STGP10NC60HD
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p10nk60
Abstract: p10nk60z p10nk60zfp B10n STP10NK60ZFP
Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @T jMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V
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STB10NK60Z/-1-
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
O-220/FP
O-247
STB10NK60Z-1
STB10NK60Z
p10nk60
p10nk60z
p10nk60zfp
B10n
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p10nk60
Abstract: p10nk60zfp VDD-300 STP10NK60ZFP B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z
Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @TjMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V
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STB10NK60Z/-1-
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
O-220/FP
O-247
STB10NK60Z-1
STB10NK60Z
STP10NK60ZFP
p10nk60
p10nk60zfp
VDD-300
B10NK
B10n
W10NK60Z
B10NK60Z
p10nk
STB10NK60Z
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f11nm60
Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V
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STD11NM60N
STD11NM60N-1
STP11NM60N
STF11NM60N
O-220
O-220FP-
STD11NM60N
STP11NM60N
f11nm60
F11NM60N
p11nm60n
STD11NM60N-1
p11nm60
JESD97
STF11NM60N
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B20NM60D
Abstract: JESD97 STB20NM60D
Text: STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET General features Type VDSS RDS on ID Pw STB20NM60D 600V <0.29Ω 20A 45W • High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge
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STB20NM60D
B20NM60D
JESD97
STB20NM60D
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F11NM60N
Abstract: f11nm60 p11nm60 JESD97 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11n
Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V
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STD11NM60N
STD11NM60N-1
STP11NM60N
STF11NM60N
O-220
O-220FP-
STD11NM60N
STP11NM60N
F11NM60N
f11nm60
p11nm60
JESD97
STD11NM60N-1
STF11NM60N
f11n
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GP10NC60KD
Abstract: gb10nc60kd JESD97 STGB10NC60K STGB10NC60KDT4 STGP10NC60K STGP10NC60KD
Text: STGB10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K STGP10NC60K 600V 600V <2.5V <2.5V 10A 10A • Lower on voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction
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STGB10NC60K
STGP10NC60K
O-220
GP10NC60KD
gb10nc60kd
JESD97
STGB10NC60K
STGB10NC60KDT4
STGP10NC60K
STGP10NC60KD
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GP10NC60H
Abstract: JESD97 STGP10NC60H RG 2006 10A 600V
Text: STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT General features Type VCES STGP10NC60H 600V IC VCE sat (Max)@ 25°C @100°C < 2.5V 10A • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■
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STGP10NC60H
O-220
GP10NC60H
JESD97
STGP10NC60H
RG 2006 10A 600V
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GW30NC60WD
Abstract: stgw30nc60wd IGBT STGW30NC60WD schematic diagram UPS inverter JESD97
Text: STGW30NC60WD N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60WD 600V < 2.5V 30A • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility)
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STGW30NC60WD
O-247
GW30NC60WD
stgw30nc60wd
IGBT STGW30NC60WD
schematic diagram UPS inverter
JESD97
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w20nm60
Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
w20nm60
w20nm60fd
P20NM60FD
F20NM60D
STP20NM60FD
STW20NM60FD
p20nm60
mosfet 600V 100A ST
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RG 2006 10A 600V
Abstract: No abstract text available
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
RG 2006 10A 600V
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W20NM60
Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60FD
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
O-247
W20NM60
w20nm60fd
P20NM60FD
p20nm60
p20nm60f
mosfet 600V 100A ST
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GP10NC60KD
Abstract: STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking STGF10NC60KD gp10nc60
Text: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V
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STGB10NC60KD
STGF10NC60KD
STGP10NC60KD
O-220
O-220FP
STGF10NC60KD
O-220
GP10NC60KD
STGP10NC60KD
gf10nc60kd
RG 2006 10A 600V
GF10N
ST IGBT code marking
gp10nc60
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30V 20A power p MOSFET
Abstract: FCB20N60F FCB20N60FTM
Text: TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Farichild’ s proprietary,new generation ofhigh voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60F
30V 20A power p MOSFET
FCB20N60F
FCB20N60FTM
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fca20n60
Abstract: N-Channel mosfet 600v ir 600V 20A N-Channel MOSFET TO-3P
Text: SuperFET TM FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCH20N60
FCA20N60
FCA20N60
110pF)
N-Channel mosfet 600v ir
600V 20A N-Channel MOSFET TO-3P
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N-Channel mosfet 600v ir
Abstract: FCA20N60 RG 2006 10A 600V F109 FCH20N60 N-Channel mosfet 600v 20A 600V 20A N-Channel MOSFET TO-3P
Text: SuperFET TM FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCH20N60
FCA20N60
FCA20N60
N-Channel mosfet 600v ir
RG 2006 10A 600V
F109
N-Channel mosfet 600v 20A
600V 20A N-Channel MOSFET TO-3P
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APT0406
Abstract: APT0501 APT0502 APTM100H45SCTG
Text: APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR1A CR3A CR3B Q3 G3 G1 OUT1 OUT2 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS
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APTM100H45SCTG
APT0406
APT0501
APT0502
APTM100H45SCTG
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Untitled
Abstract: No abstract text available
Text: APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR1A CR3A CR3B Q3 G3 G1 OUT1 OUT2 CR2A Q2 S3 CR4A CR2B CR4B G2 G4 S2 S4 0/VBUS
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APTM100H45SCTG
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600v 10A ultra fast recovery diode
Abstract: FCB20N60F mosfet 10a 600v 10a 400V ultra fast diode d2pak N-Channel mosfet 600v 20A FCB20N60FTM
Text: SuperFET FCB20N60F TM 600V N-CHANNEL FRFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60F
160ns
FCB20N60F
600v 10A ultra fast recovery diode
mosfet 10a 600v
10a 400V ultra fast diode d2pak
N-Channel mosfet 600v 20A
FCB20N60FTM
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