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    RFD16N05SM Price and Stock

    onsemi RFD16N05SM9A

    MOSFET N-CH 50V 16A TO252AA
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    DigiKey RFD16N05SM9A Cut Tape 2,658 1
    • 1 $1.47
    • 10 $0.995
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    RFD16N05SM9A Digi-Reel 2,658 1
    • 1 $1.47
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    RFD16N05SM9A Reel 2,500 2,500
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    Avnet Americas RFD16N05SM9A Reel 16 Weeks 2,500
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    Mouser Electronics RFD16N05SM9A 9,990
    • 1 $1.42
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    Verical RFD16N05SM9A 87 13
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    Arrow Electronics RFD16N05SM9A Cut Strips 87 16 Weeks 1
    • 1 $1.395
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    RFD16N05SM9A 1 36 Weeks 1
    • 1 $0.1722
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    Newark RFD16N05SM9A Cut Tape 2,500
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    RFD16N05SM9A Reel 2,500
    • 1 $0.644
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    Onlinecomponents.com RFD16N05SM9A
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    Quest Components RFD16N05SM9A 56
    • 1 $1.33
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    • 100 $0.665
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    Ameya Holding Limited RFD16N05SM9A 1,932
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    Richardson RFPD RFD16N05SM9A 2,500
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    Avnet Asia RFD16N05SM9A 16 Weeks 2,500
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    Avnet Silica RFD16N05SM9A 17 Weeks 2,500
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    EBV Elektronik RFD16N05SM9A 18 Weeks 2,500
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    onsemi RFD16N05SM

    MOSFET N-CH 50V 16A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD16N05SM Tube 1,800
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    Harris Semiconductor RFD16N05SM

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    Quest Components RFD16N05SM 815
    • 1 $2.064
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    • 1000 $0.8514
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    Fairchild Semiconductor Corporation RFD16N05SM9A

    POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 50V, 0.047OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFD16N05SM9A 104
    • 1 $1.33
    • 10 $1.33
    • 100 $0.399
    • 1000 $0.399
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    Harris Semiconductor RFD16N05SM9A

    POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 50V, 0.047OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFD16N05SM9A 51
    • 1 $1.05
    • 10 $0.875
    • 100 $0.63
    • 1000 $0.63
    • 10000 $0.63
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    Find more RFD16N05SM price and stock on Findchips.com

    RFD16N05SM Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD16N05SM Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power MOSFET Original PDF
    RFD16N05SM Harris Semiconductor 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFD16N05SM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RFD16N05SM Intersil 16A, 50V, 0.047 ?, N-Channel Power MOSFETs Original PDF
    RFD16N05SM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD16N05SM Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFD16N05SM Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFD16N05SM9A Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power MOSFET Original PDF
    RFD16N05SM9A Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power, MOSFETs Original PDF
    RFD16N05SM9A_NL Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power, MOSFETs Original PDF
    RFD16N05SM_NL Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power, MOSFETs Original PDF

    RFD16N05SM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH 2267

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM Data Sheet Title FD1 05, D16 5S bt A, V, 47 m, anwer OSTs utho eyrds ter- July 1999 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Features The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process.


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771.

    f16n05

    Abstract: RFD16N05SM9A AN7254 AN7260 AN9321 AN9322 RFD16N05 RFD16N05SM
    Text: RFD16N05, RFD16N05SM S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD16N05, RFD16N05SM O-251AA 175oC O-252AA RFD16N05 RFD16N05SM 1e-30 07e-3 19e-7) f16n05 RFD16N05SM9A AN7254 AN7260 AN9321 AN9322

    D16N05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. D16N05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05SM September 2013 Data Sheet N-Channel Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    Original     		PDF RFD16N05SM RFD16N05 RFD16N05SM TA09771. RFD16N05SM9A

    f16n05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. f16n05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771.

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    Untitled

    Abstract: No abstract text available
    Text: LTC1157 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LTC1157 dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low RDS ON N-channel switch


    Original     		PDF LTC1157 LTC1157

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original     		PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    MTD10N05E

    Abstract: 8.7V
    Text: LTC1157 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Allows Lowest Drop 3.3V Supply Switching Operates on 3.3V or 5V Nominal Supplies 3 Microamps Standby Current 80 Microamps ON Current Drives Low Cost N-Channel Power MOSFETs


    Original     		PDF LTC1157 LTC1157 MTD10N05E 8.7V

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan     		PDF RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L

    Untitled

    Abstract: No abstract text available
    Text: interrii RFD16N05, RFD16N05SM D ata S h e e t 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. AN7254 AN7260.

    304E3

    Abstract: rfd16n05sm9a 66E-6
    Text: RFD16N05, RFD16N05SM HARRIS S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V • r DS O N = 0-047U • Temperature Compensating PSPICE Model ORAIN (FLANGE)


    OCR Scan     		PDF RFD16N05, RFD16N05SM O-251AA 0-047U O-252AA RFD16N05 RFD16N05SM O-251AA O-252AA F16N05 304E3 rfd16n05sm9a 66E-6

    th 2267.1

    Abstract: 2267.1 TH 2267-1 16N05SM th+2267.1 MCP3550-60T-E/th 2267.1
    Text: h a f r r RFD16N05 RFD16N05SM i s May 1992 N -Channel Enhancem ent Mode Power Field Effect Transistors MegaFETs Packages Features T0 -251 A A • 16A, 50V TOP VIEW • r DS(on) = 0.047 i i >SOURCE • UIS SOA Rating Curve (Single Pulse) DRAIN TAB” • SOA is P o w er-D issipation Lim ited


    OCR Scan     		PDF RFD16N05 RFD16N05SM -252AA RFD16N05SM AN-7260. th 2267.1 2267.1 TH 2267-1 16N05SM th+2267.1 MCP3550-60T-E/th 2267.1

    RFD16N05

    Abstract: RFD16N05SM
    Text: Power MegaFETs - RFD16N05, RFD16N05SM File Number 2267 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 16 A , 5 0 V rdsion) = 0 .0 4 7 O TERMINAL DIAGRAM Features: • Single pulse avalanche energy rated m SOA is power-dissipation limited


    OCR Scan     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM CAPGEOISN06CF3 AN-7254 AN-7260. 92CS-4Z922

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. 047i2

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r