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    RF TRANSISTOR 2.5 GHZ Search Results

    RF TRANSISTOR 2.5 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 2.5 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ericsson 20147

    Abstract: PTB20147 RF TRANSISTOR 2.5 GHZ 20147 IEC-68-2-54
    Text: e PTB 20147 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB ericsson 20147 PTB20147 RF TRANSISTOR 2.5 GHZ 20147 IEC-68-2-54

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB

    9434

    Abstract: ADC 50 Ghz RF NPN POWER TRANSISTOR 2.5 GHZ z-Source
    Text: e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB 9434 ADC 50 Ghz RF NPN POWER TRANSISTOR 2.5 GHZ z-Source

    Inmarsat

    Abstract: No abstract text available
    Text: e PTB 20078 2.5 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB Inmarsat

    fe 8622

    Abstract: 422-371 23A025 521603 18896
    Text: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A025 23A025 fe 8622 422-371 521603 18896

    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


    Original     		PDF AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222

    LTE21009R

    Abstract: No abstract text available
    Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 250 mA


    Original     		PDF LTE21009R LTE21009R

    Untitled

    Abstract: No abstract text available
    Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Gold Metalization • Emitter Ballasting Dim: A B C D E MAXIMUM RATINGS


    Original     		PDF LTE21009R LTE21009R

    c7a series vishay capacitor

    Abstract: F1 J37 C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR
    Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26125E AGR26125E AGR26125EU AGR26125EF c7a series vishay capacitor F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR

    MRF901

    Abstract: "Small Signal Amplifiers" VCEO-15V
    Text: MRF901 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF901 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.5 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • High Gain • Common Emitter MAXIMUM RATINGS


    Original     		PDF MRF901 MRF901 "Small Signal Amplifiers" VCEO-15V

    F1 J37

    Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz
    Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26125E AGR26125E AGR26125EU AGR26125EF F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz

    RF TRANSISTOR SOT23 5

    Abstract: transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10
    Text: BFS17A NPN Bipolar Silicon RF Transistor in plastic package SOT23 Attribute Value Configuration UOM NPN Function RF Package SOT23 VCEO max 15 V VCBO max 25 V VEBO max 2.5 V IC max 25 mA 200 mW Ptot max DC current gain Transition frequency min 20 @IE 2 mA @VCE


    Original     		PDF BFS17A BFR92 BFR93A RF TRANSISTOR SOT23 5 transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1,

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1, MMBR901LT1/D MMBR901LT1

    bvoe

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20147 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • • • The 20147 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output


    OCR Scan     		PDF

    TE 1820

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um outp ut power, it may be used fo r both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used fo r both CW and PEP


    OCR Scan     		PDF IEC-68-2-54 Std-002-A

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20078 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    202279m

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NIPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used for both C W and PEP


    OCR Scan     		PDF

    18W transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20180 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Prelim inary Description Key Features The 20180 is a class AB, NPN, common emitter R F Power Transistor intended for 26 V D C operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output


    OCR Scan     		PDF 250mA 18W transistor

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MMBR901LT1, T3 MRF9011LT1 Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    OCR Scan     		PDF MMBR901LT1, MRF9011LT1 MRF9011LT1) OT-23 OT-143 MRF9011LT1 MMBR901LT1

    mmbr901lt1

    Abstract: 75 watt npn switching transistor MARKING 7A sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    OCR Scan     		PDF OT-23 MMBR901LT1, mmbr901lt1 75 watt npn switching transistor MARKING 7A sot-23

    MPS901

    Abstract: TDB O 117 SP BR901 MMBR901LT1 RF901 MMBR901
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed prim arily for use in high-gain, low -noise s m all-signal am plifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.


    OCR Scan     		PDF MRF9011LT1) MMBR901 MMBR901LT1, MRF901 MPS901 MRF9011LT1 TDB O 117 SP BR901 MMBR901LT1 RF901

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    OCR Scan     		PDF MMBR901LT1/D OT-23 MMBR901LT1