RF TRANSISTOR 1030 MHZ Search Results

RF TRANSISTOR 1030 MHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR 1030 MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MDS400 Abstract: No abstract text available Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold	Original	PDF	MDS400 MDS400
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10250HS MRF6V10250HSR3
ATC100B3R3 Abstract: No abstract text available Text: Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 LIFETIME BUY RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10250HS MRF6V10250HSR3 MRF6V10250HS ATC100B3R3
ATC100B4R7CT500XT Abstract: transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	PDF	MRF6V10250HS MRF6V10250HSR3 ATC100B4R7CT500XT transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955
TRANSISTOR 618 Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS Text: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration	Original	PDF	MAPRST1030-1KS TRANSISTOR 618 J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS
HVV1011-600 Abstract: hvvi 1090MHZ Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor	Original	PDF	HVV1011-600 1030-1090MHz HVV1011-600 HV800 MIL-STD-883, EG-01-PO15X4 hvvi 1090MHZ
1090 Abstract: TPR175 transistor 388 DSA0039087 common base transistor Text: TPR175 NPN SILICON RF-MICROWAVE POWER TRANSISTOR PACKAGE STYLE DESCRIPTION: The ASI TPR175 is a common base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz. FEATURES: • Common Base • Internal Matching Network • PG = 8.0 dB at 175 W/1090 MHz	Original	PDF	TPR175 TPR175 1090 transistor 388 DSA0039087 common base transistor
HV1011-1000L Abstract: No abstract text available Text: DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness	Original	PDF	HV1011-1000L 1090MHz.
1030-1090MHz Abstract: 4884 SM200 DS01A Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	PDF	HVV1011-035 1030-1090MHz, HVV1011-035 429-HVVi EG-01-DS01A 1030-1090MHz 4884 SM200 DS01A
Untitled Abstract: No abstract text available Text: DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage	Original	PDF	HVV1011-035 SM200
transistor c 3274 Abstract: 1030 mhz 1030-1090MHz STAP1011-180 Text: STAP1011-180 RF power transistor the LdmoST family, N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% ■ Plastic package	Original	PDF	STAP1011-180 2002/95/EC STAP1011-180 PowerSO-10RF transistor c 3274 1030 mhz 1030-1090MHz
ASI10573 Abstract: AVF350 Text: AVF350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° The ASI AVF350 is a high power Class C transistor, designed for Avionics Applications in 1030-1090 MHz. ØD C E F G FEATURES: H • Internal Input/Output Matching Networks	Original	PDF	AVF350 AVF350 ASI10573 ASI10573
transistor BD 522 Abstract: J023 Text: Part Number: Integra ILD1011M550HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	PDF	ILD1011M550HV ILD1011M550HV ILD1011M550HV-REV-NC-DS-REV-A transistor BD 522 J023
AVF450 Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166 Text: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:	Original	PDF	AVF450 AVF450 ASI10575 D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166

ILD1011M160HV Abstract: No abstract text available Text: Part Number: Integra ILD1011M160HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M160HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	PDF	ILD1011M160HV ILD1011M160HV ILD1011M160HV-REV-NC-DS-REV-B
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M280HV Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M280HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	PDF	ILD1011M280HV ILD1011M280HV ILD1011M280HV-REV-PR1-DS-REV-B
L1128 Abstract: L038 1030-1090MHz Text: STAC1011-350 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■	Original	PDF	STAC1011-350 STAC1011-350 STAC265B L1128 L038 1030-1090MHz
1090mhz Abstract: JESD22-A114 PRA1000 Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit	Original	PDF	960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 PRA1000 52-j1 1090mhz JESD22-A114
ILD1011M250 Abstract: ild10 Text: Part Number: Integra ILD1011M250 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M250 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	PDF	ILD1011M250 ILD1011M250 ILD1011M250-REV-NC-DS-REV-A ild10
Integra Technologies Abstract: No abstract text available Text: Part Number: Integra ILD1011M15HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	PDF	ILD1011M15HV ILD1011M15HV ILD1011M15HV-REV-NC-DS-REV-E Integra Technologies
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M400 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	PDF	ILD1011M400 ILD1011M400 ILD1011M400-REV-NC-DS-REV-I
acrian RF POWER TRANSISTOR Abstract: I3003 25CC TPR175 TPR400 TPR400-2 transistor DF 50 we400 Scans-00115664 Text: 0182998 ACRIAN n ^ a ISJm’I r ; ^ y GENERAL T7 INC j ^ « q BMC rj^ \|j \|!\|gM tw g ; T P R 4 0 0 400 WATTS • 50 VOLTS 1030/1090 MHz DESCRIPTION The TPR400 is a silicon NPN common base RF power transistor designed specifically for pulsed operation as a transponder/interrogator amplifier in the 1030 to	OCR Scan	PDF	TPR400 Pw-10 TPR400 Vcc-50 DD01D71 T-33-15 TPR400-3 06-6pf acrian RF POWER TRANSISTOR I3003 25CC TPR175 TPR400-2 transistor DF 50 we400 Scans-00115664
TRANSISTOR HBA Abstract: 1035 transistor transistor A 1011 Capacitor 4.7 uf ss1090 ss-1090 electrolytic capacitor 47 1090 ATC100A PH1090-350L Text: PH1090-350L M/A-OOM Avionics Pulsed Power Transistor - 350 Watts, 1030-1090 MHz, 250\|is Pulse, 10% Duty /MOCOVI ^ M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH1090-350L is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz avionics	OCR Scan	PDF	PH1090-350L PH1090-350L 250ns TT47M63A ATC100A TRANSISTOR HBA 1035 transistor transistor A 1011 Capacitor 4.7 uf ss1090 ss-1090 electrolytic capacitor 47 1090
transistor 1047 Abstract: transistor 931 transistor 1047 voltage rating 1090 ATC100A PH1090-550S transistor 1207 l0111 Text: PH1090-550S M/A-OOM Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty /MOCOVI ^ M RF & Microwave Products Outline Drawing1 Description M /A -C O M ’ s P H 1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment	OCR Scan	PDF	PH1090-550S PH1090-550S 10jaS) ATC100A transistor 1047 transistor 931 transistor 1047 voltage rating 1090 transistor 1207 l0111

RF TRANSISTOR 1030 MHZ Search Results

RF TRANSISTOR 1030 MHZ Result Highlights (5)

RF TRANSISTOR 1030 MHZ Datasheets Context Search

MDS400

Untitled

ATC100B3R3

ATC100B4R7CT500XT

TRANSISTOR 618

HVV1011-600

1090

HV1011-1000L

1030-1090MHz

Untitled

transistor c 3274

ASI10573

transistor BD 522

AVF450

ILD1011M160HV

Untitled

L1128

1090mhz

ILD1011M250

Integra Technologies

Untitled

acrian RF POWER TRANSISTOR

TRANSISTOR HBA

transistor 1047