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    RF POWER TRANSISTOR MRF18060B MRF18060 Search Results

    RF POWER TRANSISTOR MRF18060B MRF18060 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR MRF18060B MRF18060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 7, 3/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MFR18060BLR3 MFR18060BLSR3 Designed for PCN and PCS base station applications with frequencies from


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    PDF MRF18060B MFR18060BLR3 MFR18060BLSR3 MRF18060B

    SMD Transistor z6

    Abstract: transistor 6 pin SMD Z2 TRANSISTOR Z4 smd z5 transistor BC847 GSM1900 LP2951 MRF18060 MRF18060B MRF18060BLR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from


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    PDF MRF18060B MRF18060BLR3 MRF18060BLSR3 MRF18060BLR3 SMD Transistor z6 transistor 6 pin SMD Z2 TRANSISTOR Z4 smd z5 transistor BC847 GSM1900 LP2951 MRF18060 MRF18060B

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 7, 3/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from


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    PDF MRF18060B MRF18060BLR3 MRF18060BLSR3 MRF18060B

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF18060B Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF18060B MRF18060BLR3 MRF18060BLSR3 MRF18060BLR3

    BC847

    Abstract: GSM1900 LP2951 MRF18060 MRF18060B MRF18060BLR3 MRF18060BLSR3 SMD Transistor z6 RF Power Transistor MRF18060B MRF18060 465A MARKINGS
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 8, 5/2006 RF Power Field Effect Transistor MRF18060BLR3 MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF18060B MRF18060BLR3 MRF18060BLSR3 MRF18060BLR3 BC847 GSM1900 LP2951 MRF18060 MRF18060B MRF18060BLSR3 SMD Transistor z6 RF Power Transistor MRF18060B MRF18060 465A MARKINGS

    transistor marking PB C8

    Abstract: NI-780S SMD transistor 2x sot 23
    Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF18060B GSM1930 MRF18060BLSR3 transistor marking PB C8 NI-780S SMD transistor 2x sot 23

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF18060B GSM1930 MRF18060BLSR3

    J299

    Abstract: J253 6 PIN SMD Z4 smd z5 transistor Transistor z1 SMD Transistor z6
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 GSM1930 J299 J253 6 PIN SMD Z4 smd z5 transistor Transistor z1 SMD Transistor z6

    SMD TRANSISTORS AAA

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BS Designed for PCN and PCS base station applications with frequencies from


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    PDF MRF18060B/D MRF18060B MRF18060BR3 MRF18060BS MRF18060BSR3 GSM1930 MRF18060BSR3 SMD TRANSISTORS AAA

    RF Power Transistor MRF18060B MRF18060

    Abstract: SMD Transistor z6 50H60 smd z5 transistor GSM1900 GSM1930 LP2951 MRF18060 MRF18060B MRF18060BLSR3
    Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from


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    PDF MRF18060B/D MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 GSM1930 MRF18060B MRF18060BR3 MRF18060BLSR3 RF Power Transistor MRF18060B MRF18060 SMD Transistor z6 50H60 smd z5 transistor GSM1900 GSM1930 LP2951 MRF18060

    capacitor J400

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF GSM1930 MRF18060B MRF18060BS capacitor J400

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


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    PDF MRF18060B/D GSM1930 MRF18060B MRF18060BS MRF18060B/D

    MRF18060

    Abstract: BC847 GSM1900 GSM1930 LP2951 MRF18060B MRF18060BS RF Power Transistor MRF18060B MRF18060
    Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


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    PDF MRF18060B/D MRF18060B MRF18060BS GSM1930 MRF18060B MRF18060 BC847 GSM1900 GSM1930 LP2951 MRF18060BS RF Power Transistor MRF18060B MRF18060

    RF Power Transistor MRF18060B MRF18060

    Abstract: SMD Transistor z6 J290 smd
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BS Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF18060B MRF18060BR3 MRF18060BS MRF18060BSR3 GSM1930 RF Power Transistor MRF18060B MRF18060 SMD Transistor z6 J290 smd

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF18060B/D GSM1930 MRF18060BR3 MRF18060BSR3 MRF18060BLSR3

    BC847

    Abstract: GSM1900 GSM1930 LP2951 MRF18060 MRF18060BLSR3 MRF18060BR3 MRF18060BSR3 SMD Transistor BC847
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


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    PDF MRF18060B/D GSM1930 MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 BC847 GSM1900 LP2951 MRF18060 MRF18060BLSR3 SMD Transistor BC847

    motorola mc 2100

    Abstract: DGS SMD TRANSISTOR BC847 GSM1900 GSM1930 LP2951 MRF18060 MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF18060BR3 MRF18060BSR3


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    PDF MRF18060B/D MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 GSM1930 MRF18060BR3 MRF18060BSR3 motorola mc 2100 DGS SMD TRANSISTOR BC847 GSM1900 LP2951 MRF18060 MRF18060BLSR3

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


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    PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    EB202

    Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
    Text: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF


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    PDF SG46/D EB202 AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER

    MHW6181

    Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
    Text: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1


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    PDF SPSSG1009/D MBC13720, MBC13916 MRF1535T1, MRF1550T1 MRF373A, MRF373AS, MRF374A, MRF372 MRF9002R1, MHW6181 MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428

    Motorola transistors MRF646

    Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860
    Text: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today


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    PDF SG46/D Motorola transistors MRF646 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


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    PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


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    PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    capacitor J400

    Abstract: Motorola Potentiometer cd 740 chip smd transistor A1 sot-23 smd UJ 99 BC847 GSM1900 GSM1930 LP2951 MRF18060
    Text: MOTOROLA O rder this docum ent by M RF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18060B M R F18060B S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    OCR Scan
    PDF RF18060B/D GSM1930 65A-04 MRF18060BS) MRF18060B MRF18060BS capacitor J400 Motorola Potentiometer cd 740 chip smd transistor A1 sot-23 smd UJ 99 BC847 GSM1900 LP2951 MRF18060