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    RF POWER AMPLIFIER 850 MHZ Search Results

    RF POWER AMPLIFIER 850 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER AMPLIFIER 850 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PTB 20200

    Abstract: No abstract text available
    Text: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier


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    PDF 1-877-GOLDMOS 1301-PTB PTB 20200

    MRF141G

    Abstract: MRF141G data sheet push pull power amplifier MOSFET RF POWER
    Text: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS


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    PDF MRF141G MRF141G MRF141G data sheet push pull power amplifier MOSFET RF POWER

    MRF151G

    Abstract: mrf151g 300 1202 transistor
    Text: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS


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    PDF MRF151G MRF151G mrf151g 300 1202 transistor

    BGY502

    Abstract: bgy284e BGY288 rf power amplifier 850 MHZ
    Text: BGY288 GSM/GPRS quad-band amplifier Ultra-small RF power amplifier module for mobile phones with integrated power control loop Measuring only 64 mm2, the BGY288 is an ultra-small GSM/GPRS power amplifier module with an accurate, integrated power control loop. Designed for 850, 900, 1800


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    PDF BGY288 BGY288, BGY502 bgy284e rf power amplifier 850 MHZ

    100 watt fm transmitter

    Abstract: 1 transistor fm transmitter 5 watt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 . . . designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850 – 960 MHz.


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    PDF MRF898 100 watt fm transmitter 1 transistor fm transmitter 5 watt

    PA900-19-60L

    Abstract: No abstract text available
    Text: Order this data sheet by PA900-19-60UD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information PA900-19-60L The RF Line Linear Power Amplifier Designed for cellular radio base stations in the 850 to 900 MHz frequency solid state, Class AB amplifier incorporates


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    PDF PA900-19-60UD PA900-19-60L --19dB PA900-19-60L

    BLF278

    Abstract: blf278 rf amplifier power amplifier blf278 BLF278 mosfet VHF amplifier 217-797 blf278 rf power BLF278 VHF Power MOSFET 97233 99093 BLF278 spice
    Text: BLF278 VHF POWER MOSFET DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel EnhancementMode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID 40 A VDSS


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    PDF BLF278 BLF278 blf278 rf amplifier power amplifier blf278 BLF278 mosfet VHF amplifier 217-797 blf278 rf power BLF278 VHF Power MOSFET 97233 99093 BLF278 spice

    CECC00802

    Abstract: EN60749-15 JESD22-A113 JESD22-B102 JESD22-B106 TH72032
    Text: TH72032 868/915MHz ASK Transmitter Features Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s Wide power supply range from 1.95 V to 5.5 V


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    PDF TH72032 868/915MHz ISO14001 CECC00802 EN60749-15 JESD22-A113 JESD22-B102 JESD22-B106 TH72032

    Untitled

    Abstract: No abstract text available
    Text: TH72032 868/915MHz ASK Transmitter Features Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s Wide power supply range from 1.95 V to 5.5 V


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    PDF TH72032 868/915MHz TH72032 BAA-000 ISO14001 Jun/12

    TH72032

    Abstract: circuit diagram of Garage Door Openers application of colpitts oscillator lt 868 B102 CECC00802 J-STD-020A circuit diagram of door lock system 850-930MHz colpitts crystal oscillator
    Text: TH72032 868/915MHz ASK Transmitter Features ! ! ! ! Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s ! Wide power supply range from 1.9 V to 5.5 V


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    PDF TH72032 868/915MHz QS9000, ISO14001 TH72032 circuit diagram of Garage Door Openers application of colpitts oscillator lt 868 B102 CECC00802 J-STD-020A circuit diagram of door lock system 850-930MHz colpitts crystal oscillator

    CECC00802

    Abstract: EN60749-15 JESD22-A113 JESD22-B102 JESD22-B106 TH72032
    Text: TH72032 868/915MHz ASK Transmitter Features Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s Wide power supply range from 1.95 V to 5.5 V


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    PDF TH72032 868/915MHz ISO14001 CECC00802 EN60749-15 JESD22-A113 JESD22-B102 JESD22-B106 TH72032

    Untitled

    Abstract: No abstract text available
    Text: TH72032 868/915MHz ASK Transmitter Features Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s Wide power supply range from 1.95 V to 5.5 V


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    PDF TH72032 868/915MHz ISO14001 May/04

    Untitled

    Abstract: No abstract text available
    Text: TH72032 868/915MHz ASK Transmitter Features Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s 1 Wide power supply range from 1.95 V to 5.5 V


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    PDF TH72032 868/915MHz 123425678529ABC2D9 29ABC2D9 B53D99999999999ness ISO14001 Jun/12

    Untitled

    Abstract: No abstract text available
    Text: TH72032 868/915MHz ASK Transmitter Features ! ! ! ! Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s ! Wide power supply range from 1.95 V to 5.5 V


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    PDF TH72032 868/915MHz TH72032 ISO14001 June/07

    TS40 resistor

    Abstract: 1008CS 1008CT C0805C472K5RAC C1206C104K5RAC ITT1101BD C11AH1R5B GETEK
    Text: 2.4V 1.0W RF Power Amplifier for 2-Way Paging ITT1101BD Applications PRELIMINARY Features • • • • • • 2-Way Paging 900 MHz ISM Class AB Bias 850 to 925 MHz Operation Single Element Output Match Small Size — 16 Pin Narrow Body SOIC Plastic Package


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    PDF ITT1101BD TS40 resistor 1008CS 1008CT C0805C472K5RAC C1206C104K5RAC ITT1101BD C11AH1R5B GETEK

    Untitled

    Abstract: No abstract text available
    Text: TH72032 868/915MHz ASK Transmitter Features ‰ ‰ ‰ ‰ Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s ‰ Wide power supply range from 1.95 V to 5.5 V


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    PDF TH72032 868/915MHz ISO14001 July06

    JESD22-B102

    Abstract: TH72032
    Text: TH72032 868/915MHz ASK Transmitter Features ‰ ‰ ‰ ‰ Fully integrated PLL-stabilized VCO Frequency range from 850 MHz to 930 MHz Single-ended RF output ASK achieved by on/off keying of internal power amplifier up to 40 kbit/s ‰ Wide power supply range from 1.95 V to 5.5 V


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    PDF TH72032 868/915MHz ISO14001 March/08 JESD22-B102 TH72032

    Untitled

    Abstract: No abstract text available
    Text: 5.8V 1.2W RF Power Amplifier IC for ISM900 ITT334104BD Applications Features • • • • • • • 900 MHz ISM Cordless Telephones Wireless Modems N-PCS +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND Class AB Bias 850 to 1000 MHz Operation


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    PDF ISM900 ITT334104BD

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier


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    tic6064

    Abstract: 850-960MHz
    Text: ERICSSON $ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor D escription The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier


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    PDF

    04 ow

    Abstract: No abstract text available
    Text: 4.6V 1.0W RF Power Amplifier IC for ISM900 ITT333103BD Applications Features 900 MHz ISM • • • • • • • Cordless Telephones Wireless Modems N-PCS — Class AB Bias 850 to 1000 MHz Operation 50 £2 Input Impedance Simple 2 Element Output Match


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    PDF ISM900 ITT333103BD December-1996 04 ow

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 2.4V 1.0W RF Power Amplifier for 2-Way Paging ITT1101BD Applications Features 2-Way Paging • • • • • • 900 MHz ISM Class AB Bias 850 to 925 MHz Operation Single Element Output Match Small Size — 16 Pin Narrow Body SOIC Plastic Package


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    PDF ITT1101BD

    C11AH1R

    Abstract: C11AH1R5B
    Text: 2.4V 1.0W RF Power Amplifier for 2-Way Paging ITT1101BD Applications PRELIMINARY Features 2-Way Paging 900 MHz ISM Class AB Bias 850 to 925 MHz Operation Single Element Output Match Small Size — 16 Pin Narrow Body SOIC Plastic Package Self-Aligned MSAG -Lite MESFET Process


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    PDF ITT1101BD C11AH1R C11AH1R5B

    Untitled

    Abstract: No abstract text available
    Text: 3.3V 1.2W RF Power Amplifier IC for N-PCS/ISM900 ITT332102BD Applications Features Two-Way Paging • • • • • • • • Wireless Modems Cordless Telephones Telemetry 900 MHz ISM Single Positive Supply Class A Bias 850 to 1050 MHz Operation 50 f l Input Impedance


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    PDF N-PCS/ISM900 ITT332102BD gmber1996