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    RF PIN DIODE Search Results

    RF PIN DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    RF PIN DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN034

    Abstract: BA592 INFINEON application note BA595 BAR63 BAR64 RF Semiconductors infineon RF
    Text: Application Note No. 034 Discrete & RF Semiconductors Carrier Lifetime and Forward Resistance in RF PIN-Diodes This abstract summarises the fundamentals of RF PIN Diode physics. General design considerations of PIN Diodes are discussed and a measuring method


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    walkie talkie circuit

    Abstract: BAP1321LX BAP64LX BAP65LX BAP142LX BAP50LX BAP51LX BAP55LX BAP63LX walkie-talkie
    Text: RF PIN diodes in leadless SOD882T Boost RF performance and reduce system size Deliver the maximum performance and functionality in the smallest space with our new RF PIN diodes in SOT882T. These unique products enhance the RF performance of your system while


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    PDF OD882T OT882T. walkie talkie circuit BAP1321LX BAP64LX BAP65LX BAP142LX BAP50LX BAP51LX BAP55LX BAP63LX walkie-talkie

    diode SMD MARKING CODE K6

    Abstract: diode SMD MARKING CODE K6 03 diode k6 diode SMD MARKING CODE K6 06 MAM405 diode SMD MARKING CODE K6 02 SOD723A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP65-01 Silicon PIN diode Preliminary specification 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF switches


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    PDF M3D319 BAP65-01 MAM405 OD723A) SCA73 613512/02/pp7 diode SMD MARKING CODE K6 diode SMD MARKING CODE K6 03 diode k6 diode SMD MARKING CODE K6 06 MAM405 diode SMD MARKING CODE K6 02 SOD723A

    diode SMD MARKING CODE K6

    Abstract: diode SMD MARKING CODE K6 03 diode SMD MARKING CODE K6 02
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP65-02 Silicon PIN diode Product specification 2000 Dec 20 Philips Semiconductors Product specification Silicon PIN diode BAP65-02 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF switches


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    PDF M3D319 BAP65-02 BAP65-02 OD523 OD523) MAM405 613512/01/pp8 diode SMD MARKING CODE K6 diode SMD MARKING CODE K6 03 diode SMD MARKING CODE K6 02

    PIN DIODE

    Abstract: 49dbc AN276 APP276 MAX2266 MAX2268 MAX2269 SMP1321-079 switch mode power amplifier schematic 16dBM
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rfic, pa, power amplifier, wireless, cdma, cellular japan, pin diode, rf ics, rfics Sep 01, 2000 APPLICATION NOTE 276 The MAX2269 Power Amplifier for the Japanese CDMA Cellular Band with the PIN Diode Switch


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    PDF MAX2269 16dBm -50dBc. 925MHz 27dBm, 16dBm 13dBm. MAX2269 16dBm, PIN DIODE 49dbc AN276 APP276 MAX2266 MAX2268 SMP1321-079 switch mode power amplifier schematic

    smd diode K7

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP1321-02 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-02 FEATURES PINNING • High voltage, current controlled PIN • RF resistor for RF attenuators and switches


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    PDF M3D319 BAP1321-02 MAM405 OD523 OD523) 613512/01/pp8 smd diode K7

    6 pin smd diode

    Abstract: BAP64-02 t 522
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Preliminary specification 1999 Jun 16 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-02 PINNING FEATURES • High voltage, current controlled PIN • RF resistor for RF attenuators and switches


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    PDF M3D319 BAP64-02 BAP64-02 OD523 OD523) MAM405 125004/00/02/pp6 6 pin smd diode t 522

    smd diode K7

    Abstract: DIODE SMD K7 smd k7 diode SOD723A smd diode code K7 smd transistor marking K7 SOD-723A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP1321-01 Silicon PIN diode Preliminary specification 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode BAP1321-01 PINNING FEATURES • High voltage, current controlled PIN • RF resistor for RF attenuators and switches


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    PDF M3D319 BAP1321-01 MAM405 OD723A OD723A) SCA73 603504/05/pp7 smd diode K7 DIODE SMD K7 smd k7 diode SOD723A smd diode code K7 smd transistor marking K7 SOD-723A

    18342

    Abstract: No abstract text available
    Text: BAR64V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-02V OD-523 BAR64V-02V OD523 D-74025 12-Sep-03 18342

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-04 Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-04 OT-23 BAR64V-04 2002/95/EC 2002/96/EC D-74025 15-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-02V OD-523 BAR64V-02V OD-523 2002/95/EC D-74025 29-Jun-05

    BAR64V-04

    Abstract: BAR64V-04-GS08 BAR64V-04-GS18 RF1020
    Text: BAR64V-04 Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-04 OT-23 BAR64V-04 OT-23 08-Apr-05 BAR64V-04-GS08 BAR64V-04-GS18 RF1020

    BAR64V-02V

    Abstract: BAR64V-02V-GS08 BAR64V-02V-GS18 85643
    Text: BAR64V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-02V OD-523 BAR64V-02V OD-523 2002/95/EC 2002/96ed 08-Apr-05 BAR64V-02V-GS08 BAR64V-02V-GS18 85643

    BAR64V-04W

    Abstract: BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M
    Text: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-04W OT-323 BAR64V-04W OT-323 18-Jul-08 BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M

    d3marking

    Abstract: sot-23 DIODE marking code D3
    Text: BAR64V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-03 OT-23 BAR64V-03 D-74025 12-Dec-03 d3marking sot-23 DIODE marking code D3

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-03W OT-323 BAR64V-03W D-74025 17-Sep-03

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-03 OT-23 BAR64V-03 2002/95/EC 2002/96/EC OT-23 D-74025 15-Apr-05

    BAR64V-03W

    Abstract: BAR64V-03W-GS08 BAR64V-03W-GS18
    Text: BAR64V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-03W OT-323 BAR64V-03W OT-323 08-Apr-05 BAR64V-03W-GS08 BAR64V-03W-GS18

    BAR64V-03

    Abstract: BAR64V-03-GS08 BAR64V-03-GS18
    Text: BAR64V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-03 OT-23 BAR64V-03 OT-23) D-74025 26-Apr-04 BAR64V-03-GS08 BAR64V-03-GS18

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-03 OT-23 BAR64V-03 D-74025 12-Sep-03

    Untitled

    Abstract: No abstract text available
    Text: BAR64V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-03W OT-323 BAR64V-03W 2002/95/EC 2002/96/EC D-74025 15-Apr-05

    BAR64V-04W

    Abstract: BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M
    Text: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-04W OT-323 BAR64V-04W OT-323 08-Apr-05 BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M

    BAR64V-03

    Abstract: BAR64V-03-GS08 BAR64V-03-GS18
    Text: BAR64V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be


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    PDF BAR64V-03 OT-23 BAR64V-03 OT-23 08-Apr-05 BAR64V-03-GS08 BAR64V-03-GS18

    anzac switches

    Abstract: anzac SIGNAL PATH designer designers handbook
    Text: PIN DIODE RF SWITCHES INTRODUCTION PIN diode RF switches are devices which control the path of RF signals through transm ission line media. The switching is performed by biased PIN diodes in the RF path and is totally solid state in operation. PIN diode RF switches are typically used in small


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    PDF PD-500, anzac switches anzac SIGNAL PATH designer designers handbook