Untitled
Abstract: No abstract text available
Text: White Paper: RF MEMS Switch: What You Need to Know Structure and Usage of OMRON MEMS Switch 2SMES-01 MEMS RF Switch Type: 2SMES-01 White Paper: 2SMES-01 MEMS RF Switch 1 Outline In this application note, the basic operation principle and driving method for OMRON’s MEMS switch
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2SMES-01
2SMES-01
2SMES-01)
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DKM812-3
Abstract: Dow-Key Microwave TT-612 TT612-3 jedec package MO-220 16 pin tt612 jedec footprint MO-220 VNND-2
Text: PRELIMINARY SPDT MEMS DKM812-3 SWITCH DESCRIPTION The DKM 812 is a Single Pole Double-Throw SPDT Reflective RF switch that utilizes breakthrough MEMS technology to provide extremely low insertion loss, high linearity, and high isolation in a compact hermetic chip-scale package.
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DKM812-3
DKM812
CTRL22
Dow-Key Microwave
TT-612
TT612-3
jedec package MO-220 16 pin
tt612
jedec footprint MO-220 VNND-2
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rf mems switch spst
Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Text: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.
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AN-952,
com/090917cs
rf mems switch spst
SKY13317-373
Hittite RF Switch SOI
military switch
EDN handbook
rf3024
SKY13317-373LF
RF3023
RF3025
2SMES-01
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Untitled
Abstract: No abstract text available
Text: All rights reserved 2013 OMMIC Fabrication de MMIC Intégrant des MEMS RF Brice GRANDCHAMP [email protected] RF MEMS workshop, Microwave & RF salon, Paris, April 2013 Plan OMMIC technologies Development of MEMS at OMMIC All rights reserved © 2013 OMMIC
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ED02AH
D01PH
D01MH
D007IH
100Hz
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rf mems switch
Abstract: M1C06-CDK2 MEMS Filter spdt toggle switch application MEMS
Text: White Paper MEMS-based Amplified Switch Filter Bank Model 310-020022-001 For more than 15 years, Spectrum Microwave of Delmar, DE has developed PIN diode and MMIC based switched filter banks. Recent advancements have made micro-electromechanical systems
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M1C06-CDK2
rf mems switch
MEMS Filter
spdt toggle switch application
MEMS
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Untitled
Abstract: No abstract text available
Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of
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RMSW101
Abstract: RMSW221
Text: Radant MEMS RF MEMS Switches and Products The Most Reliable MEMS Switches 2012-2013 RF Gn d RF Out Gat e RF 255 Hudson Road Stow, MA 01775 Tel: 978.562.3866 Fax: 978.562.6277 E-mail: [email protected] www.radantmems.com 1/4/2013 Gn d RF In Gat e 1 2 2 TABLE OF CONTENTS
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RMSW100HP,
RMSW101,
RMSW200HP,
RMSW201,
RMSW220HP,
RMSW221,
RMSW240,
RMDR1000
RMSW101
RMSW221
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stacked transistor shunt switch
Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Text: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor
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Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
Abstract: varactor
Text: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,
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889-A1,
17th-20th,
Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
varactor
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ASTX-11
Abstract: ABS06
Text: ABRAC O N P RO DUC T CATAL O G September 2013 Crystals Real-Time Clocks Oscillators Filters Precision Timing RF & Microwave Magnetics & Capacitors Engineered Solutions Oscillators ASG 7.0 x 5.0 x 2.0mm Precision Timing Solutions ABLNO 9.2 x 14.8 x 5.5 mm SMT
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ABS07
100MHz
70MHz
C2013-01214
ASTX-11
ABS06
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National Relay
Abstract: No abstract text available
Text: MEMS-Based Magnetic Reed Switch Technology A White Paper by Coto Technology on Emerging Reed Switch Technologies ™ Table of Contents Page Abstract. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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Choosing the Right RF Switches for Smart Mobile Device Applications
Abstract: No abstract text available
Text: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than
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LT8415
Abstract: RF MOSFET Driver LTM4614 design ideas piezo actuator driver rf mems switch
Text: DESIGN IDEAS L Low Power Boost Regulator with Dual Half-Bridge in 3mm x 2mm DFN Drives MEMS and Piezo Actuators by Jesus Rosales Introduction Advances in manufacturing technology have made it possible for actuators, sensors, RF relays, and other moveable
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LT8415
500mV/DIV
RF MOSFET Driver
LTM4614
design ideas
piezo actuator driver
rf mems switch
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Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits
Abstract: varactor high power varactor
Text: IEEE BCTM 12.1 Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits Invited C. Huang1, K. Buisman1, L. K. Nanver1, P. J. Zampardi2, L. E. Larson3, and L. C. N. de Vreede1 1 Delft University of Technology, Delft, 2628 CD, the Netherlands
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889-A1,
Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits
varactor high power
varactor
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LTE antenna switch
Abstract: RF1255 gsm module micro lte antenna phemt gan
Text: RF1255 ANTENNA SWITCH MODULE WITH DUAL ANTENNA PATHS Package Style: 26-pin, 2.8mm x 3.6mm x 1.0mm RF1255 GSM 850/900 TRx1 TRx2 TRx3 GSM 1800/1900 TRx4 Features Excellent Insertion Loss and Isolation Performance Seven Linear Paths Offer
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RF1255
26-pin,
RF1255
DSB120326
LTE antenna switch
gsm module micro
lte antenna
phemt gan
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LT8415IDDB
Abstract: LT841 Schottky bridge LT8415 schottky diode high voltage
Text: News Release ⎜ www.linear.com Ultralow Power Boost Converter with Dual Half-Bridge Switches MILPITAS, CA – May 21, 2009 – Linear Technology announces the LT8415, a low noise micropower boost converter with integrated dual half-bridge switches. The LT8415’s unique
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LT8415,
LT8415
LT8415IDDB
LT841
Schottky bridge
schottky diode high voltage
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LTE antenna design
Abstract: LTE rf front end power amplifier transceiver 4G LTE rffe LTE RF Multiband Ericsson Base Station 700mhz SP10T Peregrine Ericsson microwave antenna Ericsson 3G or LTE Module LTE impedance tuner
Text: RF & Microwave Designline October 2010 RF front end adapts for increased mobile data demand Tero Ranta, Duncan Pilgrim & Richard Whatley, Peregrine Semiconductor The industry is predicting that data volumes could reach 2.7 exabytes per year1 in 2010 and that
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700MHz
LTE antenna design
LTE rf front end
power amplifier transceiver 4G LTE
rffe
LTE RF Multiband
Ericsson Base Station 700mhz
SP10T Peregrine
Ericsson microwave antenna
Ericsson 3G or LTE Module
LTE impedance tuner
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Untitled
Abstract: No abstract text available
Text: RF1292 ANTENNA SWITCH MODULE WITH 6 LINEAR PATHS IDEAL FOR 3G AND LTE APPLICATIONS Package Style: 18 pin, 2.5mm x 3.2mm x 1.0mm RF1292 TRX1 / GSM Rx TRX2 / GSM Rx Features TRX3 / GSM Rx Excellent Insertion Loss and Isolation Performance
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DSB120326
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RF9500
Abstract: RF1193 RF1128 RF3189 RF9501 DCS1800 EGSM900 PCS1900 RF112 rf power 88-108mhz
Text: RF9500 RF9500UMTS RX Tri-Band LNA/Filter/Switch Module UMTS RX TRI-BAND LNA/FILTER/SWITCH MODULE Package: Module, 28-Pin, 6.8mmx5mm x1.0mm RF9500 HB_OUT+ Tri-Band Support, Bands I, II, and V HB_OUT- Lowest BOM Cost and Small Solution - No External DC-Blocking Capacitors
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RF9500
RF9500UMTS
28-Pin,
28-Pin
RF9500
DS100920
869MHz
894MHz)
RF1193
RF1128
RF3189
RF9501
DCS1800
EGSM900
PCS1900
RF112
rf power 88-108mhz
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RF3023
Abstract: No abstract text available
Text: RF3023 Preliminary BROADBAND MEDIUM POWER SPDT SWITCH Package Style: SC70, 6-pin Features 10 MHz to 3 GHz Operation 0.25 dB Insertion Loss at 1 GHz 27 dB Isolation at 2 GHz 2.5 V Mimimum Control Voltage 30 dBm P0.1 dB at 3 V 50 dBm IP3 at 3 V
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RF3023
IEEE802
11b/g
RF3023
DS090526
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Untitled
Abstract: No abstract text available
Text: RF1291 SWITCH FILTER MODULE WITH EIGHT LINEAR 3G/4G PATHS Package Style: 20-pin, 3.2 mm x 3.2 mm x 1.0 mm RF1291 TRX1 / GSM Rx TRX2 / GSM Rx TRX3 / GSM Rx Features TRX4 / GSM Rx Excellent Insertion Loss and Isolation Performance
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RF1291
20-pin,
DSB120326
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rf3024
Abstract: No abstract text available
Text: RF3024 Preliminary BROADBAND MEDIUM POWER SPDT SWITCH Package Style: SC70, 6-pin Features 10 MHz to 3 GHz Operation 0.25 dB Insertion Loss at 1 GHz 27 dB Isolation at 2 GHz 2.5 V Minimum Control Voltage 30 dBm P0.1 dB at 3 V 50 dBm IP3 at 3 V
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RF3024
IEEE802
11b/g
RF3024
DS090504
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RF3023
Abstract: RF3023TR7
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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RF3023
RF3023
DS110203
RF3023SR
RF3023TR7
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Untitled
Abstract: No abstract text available
Text: ANALOG ► DEVICES Preliminary Technical 10W S P D T R F MEMS Switch with Integrated Control and Boost Circuitry ADG1939 la ta FEATURES GENERAL DESCRIPTION Wide frequency range: dc to 6 GHz High power handling capability: 10W/40dBm 0.2 dB insertion loss at 1 GHz
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ADG1939
0W/40dBm
ADG1939
65dBm
24-Lead
CP-24-9)
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