Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF LEAKAGE 10-25 GHZ CENTER FREQUENCY 920 MHZ Search Results

    RF LEAKAGE 10-25 GHZ CENTER FREQUENCY 920 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd

    RF LEAKAGE 10-25 GHZ CENTER FREQUENCY 920 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier


    Original     		PDF MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1

    amplifier MA-920

    Abstract: ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier


    Original     		PDF MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1 amplifier MA-920 ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3

    J307

    Abstract: ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HR3 MRF8S9100HSR3 A114 A115
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HSR3 A114 A115

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1

    IS680-280

    Abstract: MWE6IC9080N AN3263 AN1977 AN1987 MWE6IC9080NR1 atc100b6r8
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1 IS680-280 AN3263 AN1977 AN1987 atc100b6r8

    J307

    Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 J249 AD255A AN1955 MRF8S9100HSR3 J032 ATC100B200JT500XT

    Untitled

    Abstract: No abstract text available
    Text: AP602 High Dynamic Range 4W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +35.7 dBm P1dB • -52 dBc ACLR @ ½W PAVG • -47 dBc IMD3 @ ½W PEP Functional Diagram The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


    Original     		PDF AP602 AP602 J-STD-020 1-800-WJ1-4401

    1-64DPCH

    Abstract: No abstract text available
    Text: AP602 High Dynamic Range 4W 28V HBT Amplifier Product Features Product Description • 800 – 2200 MHz • +35.7 dBm P1dB • -52 dBc ACLR @ ½W PAVG • -47 dBc IMD3 @ ½W PEP Functional Diagram The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


    Original     		PDF AP602 AP602 JESD22-C101 J-STD-020 1-800-WJ1-4401 1-64DPCH

    Untitled

    Abstract: No abstract text available
    Text: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


    Original     		PDF AP601 AP601 JESD22-A114 JESD22-C101 J-STD-020 1-800-WJ1-4401

    ATC100B331

    Abstract: MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22 MWE6IC9100GNR1 MWE6IC9100N
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 2, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 ATC100B331 MS 1117 ADC MHVIC910HR2 A114 A115 AN1977 AN1987 JESD22

    Untitled

    Abstract: No abstract text available
    Text: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2200 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


    Original     		PDF AP601 AP601 JESD22-C101 J-STD-020 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: AP603 High Dynamic Range 7W 28V HBT Amplifier Product Features Product Description • 800 – 2200 MHz • +38.5 dBm P1dB • -50 dBc ACLR @ 1W PAVG • -51 dBc IMD3 @ 1W PEP Functional Diagram The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


    Original     		PDF AP603 AP603 JESD22-C101 J-STD-020 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF5S9101N MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 ARCHIVE INFORMATION The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

    C4532X5R1H475MT

    Abstract: 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 C4532X5R1H475MT 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1

    J1220

    Abstract: 100WpEp MWE6IC9100N
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 5, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9100N--2 MWE6IC9100N MWE6IC9100GNR1 MWE6IC9100NBR1 J1220 100WpEp

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 6, 10/2011 RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9100N--2 MWE6IC9100N MWE6IC9100NBR1 MWE6IC9100N--2

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N

    CRCW08054701FKEA

    Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 CRCW08054701FKEA ZO 607 MA MWE6IC9100NBR1 A114 A115 AN1977 AN1987

    MWE6IC9100N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N--1 MWE6IC9100N MWE6IC9100NR1 MWE6IC9100N--1

    ATC100B331JT200XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MWE6IC9100N--1 MWE6IC9100N 40tors MWE6IC9100NR1 MWE6IC9100N--1 ATC100B331JT200XT

    Untitled

    Abstract: No abstract text available
    Text: AP603 High Dynamic Range 7W 28V HBT Amplifier Product Features Product Description • 800 – 2200 MHz • +38.5 dBm P1dB • -50 dBc ACLR @ 1W PAVG • -51 dBc IMD3 @ 1W PEP Functional Diagram The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


    Original     		PDF AP603 AP603 J-STD-020 1-800-WJ1-4401