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    RF GAN AMPLIFIER Search Results

    RF GAN AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    RF GAN AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X-band Gan Hemt

    Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
    Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2


    Original     		PDF AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535

    Untitled

    Abstract: No abstract text available
    Text: High Performance RF for the Most Demanding Applications GaN High Performance RF Power, GaN NXP’s mainstream GaN Technology Enables an NXP solutions offering that is technology agnostic NXP’s LDMOS and GaN can be combined in a line-up for optimum performance and cost


    Original     		PDF CLF1G2535-100 50dBm CLF1G27LS-110 12us/10%

    Untitled

    Abstract: No abstract text available
    Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged


    Original     		PDF RF3934D RF3934D 96mmx4 57mmx0 DS110520

    Untitled

    Abstract: No abstract text available
    Text: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB


    Original     		PDF RFSW2100D 30MHz 6000MHz DS120620

    "RF Switch"

    Abstract: rf switch RFMD HEMT GaN SiC SiC BJT RFSW2100D GaN BJT
    Text: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB


    Original     		PDF RFSW2100D RFSW2100D 30MHz 6000MHz DS120620 "RF Switch" rf switch RFMD HEMT GaN SiC SiC BJT GaN BJT

    RFMD HEMT GaN SiC

    Abstract: Gan hemt transistor RFMD LDMOS 90W
    Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz RF IN VG Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged


    Original     		PDF RF3933D90 RF3933D 96mmx2 52mmx0 RF3933D DS110520 RFMD HEMT GaN SiC Gan hemt transistor RFMD LDMOS 90W

    Untitled

    Abstract: No abstract text available
    Text: RFSW2100 45W GaN-onSiC Reflective SPDT RF Switch RFSW2100 Proposed 45W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Package: QFN, 12-Pin, 3mm x 3mm Features  Broadband Operation 30MHz to 6GHz  Advanced GaN HEMT Technology  2GHz Typical Performance  Insertion Loss <0.4dB


    Original     		PDF RFSW2100 12-Pin, 30MHz DS120614

    93420

    Abstract: cgh40045f CGH40045 30579 74139 10UF 33UF 002132 FERRITE-220 transistor 15478
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40045 CGH40045 CGH40045, CGH4004 93420 cgh40045f 30579 74139 10UF 33UF 002132 FERRITE-220 transistor 15478

    Untitled

    Abstract: No abstract text available
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012

    Untitled

    Abstract: No abstract text available
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009

    2.45 Ghz power amplifier 45 dbm

    Abstract: No abstract text available
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 2.45 Ghz power amplifier 45 dbm

    str w 6554 a

    Abstract: STR 6554 a
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a

    cgh40120F

    Abstract: CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012 CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120

    CGH40180PP

    Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p

    Cree Microwave

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave

    CGH40090PP

    Abstract: 10UF CGH4009 CGH40090PP-TB JESD22 transistor 702 F smd
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 10UF CGH4009 CGH40090PP-TB JESD22 transistor 702 F smd

    CGH40180PP

    Abstract: ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623

    CGH40090PP

    Abstract: CGH40090PP-TB Cree Microwave JESD22 10UF CGH4009 hemt .s2p
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 CGH40090PP-TB Cree Microwave JESD22 10UF CGH4009 hemt .s2p

    TRANSISTOR SMD 9014

    Abstract: 9014 SMD CGH40090PP CGH40090PP-TB 9014 transistor smd Cree Microwave LK 10 0112 64 10UF CGH4009 RO4350B
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 TRANSISTOR SMD 9014 9014 SMD CGH40090PP-TB 9014 transistor smd Cree Microwave LK 10 0112 64 10UF CGH4009 RO4350B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40045 CGH40045 CGH40045, CGH4004

    CGH40010

    Abstract: CGH40010F 10UF 470PF CGH40010-TB
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F 10UF 470PF CGH40010-TB

    str 8656

    Abstract: str g 8656 str 6353 CGH40010 str 6308 8627 8656 STR A 6169 10UF 470PF
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str 8656 str g 8656 str 6353 str 6308 8627 8656 STR A 6169 10UF 470PF

    CGH40010F

    Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 JESD22

    CGH40010F

    Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P