ksc1674y
Abstract: GFE10 KSC1674C-YTA
Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92
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KSC1674
600MHz
100MHz
KSC1674
KSC1674COTA
KSC1674YTA
ksc1674y
GFE10
KSC1674C-YTA
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Ksc1674
Abstract: No abstract text available
Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic
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KSC1674
600MHz
100MHz
Ksc1674
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rf fairchild transistor 100mhz amplifier
Abstract: KSC2786 rf fairchild transistor 100mhz
Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic
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KSC2786
O-92S
600MHz
100MHz
rf fairchild transistor 100mhz amplifier
KSC2786
rf fairchild transistor 100mhz
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MMBT5770
Abstract: 3 w RF POWER TRANSISTOR NPN RF TRANSISTOR RF NPN POWER TRANSISTOR 100MHz rf fairchild transistor 100mhz
Text: MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings
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MMBT5770
OT-23
MMBT5770
3 w RF POWER TRANSISTOR NPN
RF TRANSISTOR
RF NPN POWER TRANSISTOR 100MHz
rf fairchild transistor 100mhz
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Untitled
Abstract: No abstract text available
Text: MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings
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MMBT5770
OT-23
MMBT5770
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Untitled
Abstract: No abstract text available
Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2786
600MHz
100MHz
O-92S
KSC2786
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KSC1393
Abstract: No abstract text available
Text: KSC1393 KSC1393 TV VHF Tuner RF Amplifier Forward AGC • High Current Gain Bandwidth Product : fT=700MHz (TYP.) • Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz • Low Reverse Transfer Capacitance : CRE=0.5pF (MAX.) TO-92 1 1. Base 2. Emitter 3. Collector
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KSC1393
700MHz
200MHz
KSC1393YTA
KSC1393OTA
KSC1393YBU
KSC1393OBU
KSC1393
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fr4pcb
Abstract: MMBT5770 RF Transistor reference
Text: MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings
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MMBT5770
OT-23
fr4pcb
MMBT5770
RF Transistor reference
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mmbt5770
Abstract: No abstract text available
Text: MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings
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MMBT5770
MMBT5770
OT-23
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KSC1674
Abstract: RF POWER TRANSISTOR final 100MHz rf fairchild transistor 100mhz
Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92
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KSC1674
600MHz
100MHz
KSC1674
RF POWER TRANSISTOR final 100MHz
rf fairchild transistor 100mhz
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KSC1674
Abstract: No abstract text available
Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC1674
600MHz
100MHz
KSC1674
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Untitled
Abstract: No abstract text available
Text: KST5179 KST5179 RF Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC Parameter Value 20 Units V Collector-Emitter Voltage
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KST5179
OT-23
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Untitled
Abstract: No abstract text available
Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92
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KSC1674
600MHz
100MHz
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RS270
Abstract: KSC1393
Text: KSC1393 KSC1393 TV VHF Tuner RF Amplifier Forward AGC • High Current Gain Bandwidth Product : fT=700MHz (TYP.) • Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz • Low Reverse Transfer Capacitance : CRE=0.5pF (MAX.) TO-92 1 1. Base 2. Emitter 3. Collector
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KSC1393
700MHz
200MHz
RS270
KSC1393
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SS9016
Abstract: No abstract text available
Text: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. • High total power dissipation. PT=400mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage Collector-Emitter Voltage
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SS9016
400mW)
SS9016
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KST5179
Abstract: No abstract text available
Text: KST5179 KST5179 RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC Parameter Value 20 Units V Collector-Emitter Voltage
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KST5179
OT-23
KST5179
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KST5179
Abstract: No abstract text available
Text: KST5179 KST5179 RF Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC Parameter Value 20 Units V Collector-Emitter Voltage
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KST5179
OT-23
KST5179
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KST5179
Abstract: No abstract text available
Text: KST5179 KST5179 RF Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC Parameter Value 20 Units V Collector-Emitter Voltage
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KST5179
OT-23
KST5179
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KSC2786
Abstract: No abstract text available
Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2786
600MHz
100MHz
O-92S
KSC2786
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KSC2786
Abstract: 10.7 MHZ
Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2786
600MHz
100MHz
O-92S
KSC2786
10.7 MHZ
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KSC2786
Abstract: No abstract text available
Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2786
600MHz
100MHz
O-92S
KSC2786
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heat sink
Abstract: CLC231 KH231 KH231AI KH231AK KH231AM KH231HXA KH231HXC
Text: www.fairchildsemi.com KH231 Fast Settling, Wideband Buffer/Amplifier Av = ±1 to ±5 Features • ■ ■ ■ ■ ■ General Description The KH231 Buffer/Amplifier is a wideband operational amplifier designed specifically for high-speed, lowgain applications. The KH231 is based on a current
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KH231
KH231
165MHz
100mA
CLC231
heat sink
CLC231
KH231AI
KH231AK
KH231AM
KH231HXA
KH231HXC
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Untitled
Abstract: No abstract text available
Text: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. TO-92 • High total power dissipation. PT=400mW ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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SS9016
400mW)
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NPN Epitaxial Silicon Transistor
Abstract: KSC1674
Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO -92 • High C urrent-G ain Bandwidth Product fj= 6 0 0 M H z Typ • High P ow er Gain G PE=22dB at f=100M H z ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic
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KSC1674
NPN Epitaxial Silicon Transistor
KSC1674
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