Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF AMPLIFIERS IN THE HF AND VHF Search Results

    RF AMPLIFIERS IN THE HF AND VHF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    RF AMPLIFIERS IN THE HF AND VHF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN5337 ca3028

    Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22
    Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The


    Original
    PDF CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22

    Untitled

    Abstract: No abstract text available
    Text: Product Review RPFow& erWR S m 15 8 o-.fr2 et5 rM H V/-hH FU z/FH2F00W MFJ offer the best RF Power & SWR meter for 1.8-525Mhz - HF / VHF / UHF 200W. This awesome product currently in stocks, you can get this Electronics now for only $133.44. New More Information»


    Original
    PDF 8-525Mhz 525Mhz SO-239 12Vdc

    BROADBAND TRANSFORMERS AND POWER

    Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
    Text: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of


    Original
    PDF AN878/D AN878 BROADBAND TRANSFORMERS AND POWER erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403

    Untitled

    Abstract: No abstract text available
    Text: MTT 2001 Vdmos vs. LDMOS How to Choose Polyfet Rf Devices S. K. Leong Tuesday, May 22, 2001 1 Vdmos vs Ldmos • Technology - Process Structure Differences. • DC Characteristics • RF Characteristics – Gain, Stability, Ruggedness • Applications – HF, VHF, Low UHF, High UHF, PCS


    Original
    PDF

    mosfet HF amplifier

    Abstract: 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet SD2923 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier
    Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure


    Original
    PDF AN1256 SD2923, SD2923 mosfet HF amplifier 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier

    200 watt hf mosfet

    Abstract: AN1256 SD2921-10 SD2923 HF Amplifier 300w STMicroelectronics FABRICATION SITE
    Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure


    Original
    PDF AN1256 SD2923, SD2923 200 watt hf mosfet AN1256 SD2921-10 HF Amplifier 300w STMicroelectronics FABRICATION SITE

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original
    PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    apt449a

    Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
    Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications


    Original
    PDF APT9701. ARF448A/B, APT9702. ARF449A/B APT9801. apt449a APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w

    sd2931 fm

    Abstract: SD2933 SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
    Text: AN1256 Application note High-power RF MOSFET targets VHF applications Introduction The SD2933, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family. The packaged version is shown in Figure 1. The SD2933 is a single-ended, 50 V, 300 W, gold


    Original
    PDF AN1256 SD2933, SD2933 sd2931 fm SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    2N5109 motorola

    Abstract: 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1024/D SEMICONDUCTOR APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc.


    Original
    PDF AN1024/D AN1024 2N5109 motorola 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


    Original
    PDF

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original
    PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    MRF9742

    Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original
    PDF MHW1184L MHW1224L MHW1254L MHW1304L MRF9742 MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1

    OM335

    Abstract: 860mhz rf amplifier circuit diagram 308-556 HF VHF power amplifier module
    Text: Issued March 1998 287-0429 Data Pack J Hybrid RF amplifier Data Sheet RS stock number 308-556 Introduction A hybrid thick film RF amplifier designed for use in masthead booster amplifiers, as a pre-amplifier in MATV systems and as general purpose amplifiers for VHF and UHF


    Original
    PDF OM335 24Vdc; OM335 860mhz rf amplifier circuit diagram 308-556 HF VHF power amplifier module

    motorola rf Power Transistor

    Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
    Text: Order this document by AN282A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN282A SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters, and


    Original
    PDF AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849

    BLW83

    Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and


    Original
    PDF BLW83 BLW83 philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF

    transistor equivalent table chart

    Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN282A/D AN282A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Systemizing RF Power Amplifier Design


    Original
    PDF AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941

    MRF6VP11KH

    Abstract: MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf
    Text: Freescale’s Industrial, Scientific and Medical RF Semiconductors ISM Solutions Advanced technology for top RF power performance Utilizing Freescale’s innovative 50V VHV6 LDMOS very high voltage sixth generation Laterally Typical ISM Applications Diffused Metal Oxide Semiconductor technology,


    Original
    PDF BR1593 MRF6VP11KH MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf

    MRF485

    Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
    Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


    OCR Scan
    PDF MRF476 T0-220AB MRF453 MRF455/A MRF454 MRF475 MRF449 MRF450/A MRF497 O-220AB MRF485 mrf477 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460

    S100 NPN Transistor

    Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
    Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF


    OCR Scan
    PDF fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503

    MRF485

    Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
    Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


    OCR Scan
    PDF Distorti1-11 MRF421 MRF475 O-22GAB MRF412 IMRF410 MRF485 MRF401 45A-09 MRF426 MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464

    Untitled

    Abstract: No abstract text available
    Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features


    OCR Scan
    PDF D03TD32 BLV38

    BLV38

    Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
    Text: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .


    OCR Scan
    PDF 711Gfl5ti BLV38 711002t. 0b2c13fl BLV38 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179

    4312 020 36642

    Abstract: transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38
    Text: N AMER PHILIPS/DISCRETE b'ìE J> • IAPX bbS3T31 OGi^GaE b47 BLV38 A VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VHF television transmitters vision or sound amplifiers . Features


    OCR Scan
    PDF bbS3T31 BLV38 bbS3131 4312 020 36642 transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38