secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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S6A3100
Abstract: No abstract text available
Text: SENSITRON _ SEMICONDUCTOR S6A3100 TECHNICAL DATA DATA SHEET 263, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 1000 VOLT, 5.5 AMP, 5000 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING
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S6A3100
S6A3100
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S6A320
Abstract: S6A320FR
Text: SENSITRON _ SEMICONDUCTOR S6A320 S6A320FR TECHNICAL DATA DATA SHEET 363, REV. B THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 200 VOLT, 5.5 AMP, 5000/150 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS
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S6A320
S6A320FR
S6A320
S6A320FR
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S6A305HE
Abstract: S6A310HE S6A315HE
Text: S6A305HE S6A310HE S6A315HE SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1178, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/150 VOLT, 9.0 AMP, 30 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS
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S6A305HE
S6A310HE
S6A315HE
S6A305HE
S6A310HE
S6A315HE
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S6A305FR
Abstract: S6A310FR S6A320FR S6A340FR S6A360FR
Text: S6A305FR S6A310FR S6A320FR S6A340FR S6A360FR SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2010, REV. A THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/200/400/600 VOLT, 5.0 AMP, 150 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY.
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S6A305FR
S6A310FR
S6A320FR
S6A340FR
S6A360FR
S6A305FR
S6A310FR
S6A320FR
S6A340FR
S6A360FR
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S6A305FR
Abstract: S6A310FR S6A320FR S6A340FR S6A360FR
Text: S6A305FR S6A310FR S6A320FR S6A340FR S6A360FR SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2010, REV. B THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/200/400/600 VOLT, 5.0 AMP, 180 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY.
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S6A305FR
S6A310FR
S6A320FR
S6A340FR
S6A360FR
S6A305FR
S6A310FR
S6A320FR
S6A340FR
S6A360FR
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1N5614
Abstract: 1N5622 S2M diode 1N5618 S2M -214AC 1N5616 semtech 1n5618 diode s2m diode S6M 1N5620
Text: RECTIFIER, up to 1kV, 2A, 2µs January 7, 1998 1997 SEMTECH CORP. 1N5614 1N5616 1N5618 1N5620 1N5622 S2M S4M S6M S8M S0M TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 1kV, 2A, 2µs
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1N5614
1N5616
1N5618
1N5620
1N5622
1N5614
1N5622
S2M diode
1N5618
S2M -214AC
1N5616
semtech 1n5618
diode s2m
diode S6M
1N5620
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skhi 24 r
Abstract: No abstract text available
Text: SKHI 21A R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions Values Units % &)25$
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DO-216
Abstract: do216 metallic rectifier diode UPS160E3 EIA-481-B
Text: UPS160e3 1.0 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION The Microsemi UPS160e3 Powermite Schottky rectifier is RoHS compliant and offers optimized forward voltage characteristics with reverse blocking capabilities up to 60 Volt. They are ideal for surface mount
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UPS160e3
UPS160e3
DO-216
do216
metallic rectifier diode
EIA-481-B
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Untitled
Abstract: No abstract text available
Text: UPS160e3 1.0 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION The Microsemi UPS160e3 Powermite Schottky rectifier is RoHS compliant and offers optimized forward voltage characteristics with reverse blocking capabilities up to 60 Volt. They are ideal for surface mount
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UPS160e3
UPS160e3
DO-216
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Untitled
Abstract: No abstract text available
Text: UPS160e3 1.0 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION The Microsemi UPS160e3 Powermite Schottky rectifier is RoHS compliant and offers optimized forward voltage characteristics with reverse blocking capabilities up to 60 Volt. They are ideal for surface mount
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UPS160e3
UPS160e3
DO-216
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Untitled
Abstract: No abstract text available
Text: UPS160e3 1.0 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION The Microsemi UPS160e3 Powermite Schottky rectifier is RoHS compliant and offers optimized forward voltage characteristics with reverse blocking capabilities up to 60 Volt. They are ideal for surface mount
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UPS160e3
UPS160e3
DO-216
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MARKING S6 smB
Abstract: rectifier s4 79 SS22-SS210 marking ss24 schottky marking S4 SS210 SS22 SS23 SS24 SS25
Text: 2.0A Surface Mount Schottky Rectifier SS22 – SS210 2.0A Surface Mount Schottky Rectifier Features • • • • • • For surface mount applications Metal-Semiconductor Junction with Guarding Epitaxial Construction Very low forward voltage drop High current capability
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SS210
DO-214AA)
DO-214AA,
MIL-STD-750,
MARKING S6 smB
rectifier s4 79
SS22-SS210
marking ss24
schottky marking S4
SS210
SS22
SS23
SS24
SS25
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Untitled
Abstract: No abstract text available
Text: Formosa MS Schottky Barrier Rectifier 1S20 THRU 1S60 List List. 1 Package outline. 2
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125oC
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
METHOD-1038
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STPS660CB
Abstract: No abstract text available
Text: STPS660CB Power Schottky rectifier Datasheet - production data Description 2, 4 TAB 1 3 High voltage dual Schottky rectifier suited to switch mode power supplies and other power converters. Packaged in DPAK, this device is intended for use in medium voltage operation, and particularly, in
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STPS660CB
DocID3629
STPS660CB
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY January 8, 1998 S2HVM2.5F S2HVM5F S2HVM7.5F S3HVM2.5F S3HVM5F S6HVM2.5F TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com QUICK REFERENCE DATA HIGH VOLTAGE, HIGH DENSITY, FAST RECOVERY MODULAR RECTIFIER ASSEMBLY
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TEL805-498-2111
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Untitled
Abstract: No abstract text available
Text: STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY January 9, 1998 S3HVM2.5 S3HVM5 S3HVM7.5 S3HVM10 S6HVM2.5 S6HVM5 S9HVM2.5 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com QUICK REFERENCE DATA HIGH VOLTAGE, HIGH DENSITY, STANDARD RECOVERY MODULAR RECTIFIER ASSEMBLY
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S3HVM10
TEL805-498-2111
0000V
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5B2 rectifier
Abstract: 5B1 International Rectifier 5B4 RECTIFIER 5B1 rectifier 5b2 bridge rectifier 5B4 bridge rectifier BRIDGE 5B2 bs2 International Rectifier 3SB40 5B1 bridge
Text: International Rectifier Sem iconductors Rectifier Bridges Encapsulated Rectifier Bridges—Single Phase R E FE R E N C E T A B L E Type Stock N o. V rsm V o lts lo c V rrm V o lts T a m b "^ C Tamb=100‘ C Outline Drawing No. I fsm 20 m S Am ps 1 Am pere at 50'C Encapsulated Bridge
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11595R
11S966
11597E
11598C
1599A
11600C
1SB05
19852X
1SB10
19851B
5B2 rectifier
5B1 International Rectifier
5B4 RECTIFIER
5B1 rectifier
5b2 bridge rectifier
5B4 bridge rectifier
BRIDGE 5B2
bs2 International Rectifier
3SB40
5B1 bridge
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF20100CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF20100CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
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MBRF20100CT/D
MBRF20100CT
b3b72SS
MBRF201
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MBR4045PT
Abstract: G40A vip 20a schottky rectifier 3amp SAA 1020
Text: P D -2 .3 4 3 International gel Rectifier MBR4045PT SCHOTTKY RECTIFIER 40 Amp Description/Features Major Ratings and Characteristics MBR4045PT Units Characteristics The MBR4045PT center tap Schottky rectilier has been optimized for very low forward voltage drop, with moderate
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MBR4045PT
MBR4045PT
20Apk
TJ-125Â
-55to150
40hf140s02
G40A
vip 20a
schottky rectifier 3amp
SAA 1020
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S620T
Abstract: No abstract text available
Text: MOTOROLA Order M b document byMSRO620CT/O SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MSRD620CT 8WITCHMODE™ Soft U ltrafast Recovery Power Rectifier SOFT ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS Plastic DPAK Package State of the art geometry features epitaxial construction with
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byMSRO620CT/O
MSRD620CT
S620T
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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RN820
Abstract: 1N1195 1196-A
Text: 5bE ì> 7tì2eì237 GD41774 412 • S6TH m e r e n jn i i c n i i O U O 'i n U M O U N i n 248 b -» in 250 b 1N 1195 A 1N -,198 A [j^lDtS^OtitLllOTlEOMD ! rn 820/ r n 1 1 2 0 S G S-THOnSON RECTIFIER DIODES ■ STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY
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GD4177l4
820/rn
250cm.
310cm
RN820
1N1195
1196-A
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