Untitled
Abstract: No abstract text available
Text: KAI-02170 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 14, 2013 PRELIMINARY DEVICE PERFORMANCE SPECIFICATION REVISION 0.7 PS-0146 This document contains preliminary specifications and design goals for a prototype product and is subject to change
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KAI-02170
PS-0146
PS-0146
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K4C560838C-TCB
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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K4C5608/1638C
256Mb
Orga41
K4C560838C-TCB
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Untitled
Abstract: No abstract text available
Text: KAI-02170 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR AUGUST 14, 2013 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0146 KAI-02170 Image Sensor TABLE OF CONTENTS Summary Specification . 7
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KAI-02170
PS-0146
PS-0146
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Untitled
Abstract: No abstract text available
Text: KAI-04070 IMAGE SENSOR 2048 H X 2048 (V) INTERLINE CCD IMAGE SENSOR JUNE 12, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 2.1 PS-0145 KAI-04070 Image Sensor TABLE OF CONTENTS Summary Specification . 7
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KAI-04070
PS-0145
PS-0145
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TC59LM806CFT
Abstract: TC59LM814CFT
Text: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 4,194,304-WORDS x 4 BANKS × 16-BITS Network FCRAM TM 8,388,608-WORDS × 4 BANKS × 8-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network
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TC59LM814/06CFT-50
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFT
TC59LM814CFT
TC59LM806CFT
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K4C560838C-TCD3
Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
Text: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.7 - 1 - REV. 0.7 Aug. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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K4C5608/1638C
256Mb
366Mbps/pin
183MHz)
K4C560838C-TCD3
K4C560838C-TCD4
K4C560838C-TCDA
K4C561638C-TCD3
K4C561638C-TCD4
K4C561638C-TCDA
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Untitled
Abstract: No abstract text available
Text: TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR FCRAMTM
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TC59LM814/06CFT-50
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFT
TC59LM814CFT
TC59LM806CFT
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PDF
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BI 170-1-2
Abstract: lalb RDAB 31 UVW generator TC59LM806CFTI TC59LM814CFTI
Text: TC59LM814/06CFTI-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 I-version − 8,388,608-WORDS x 4 BANKS ×8-BITS − 4,194,304-WORDS × 4 BANKS ×16-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFTI are Network
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Original
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TC59LM814/06CFTI-60
256Mbits
608-WORDS
304-WORDS
16-BITS
TC59LM814/06CFTI
TC59LM814CFTI
TC59LM806CFTI
BI 170-1-2
lalb
RDAB 31
UVW generator
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PDF
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Untitled
Abstract: No abstract text available
Text: TC59LM814/06CFTI-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 4,194,304-WORDS x 4 BANKS × 16-BITS Network FCRAM TM 8,388,608-WORDS × 4 BANKS × 8-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFTI are Network
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Original
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TC59LM814/06CFTI-60
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFTI
TC59LM814CFTI
TC59LM806CFTI
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PDF
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K4C560838F-TCD3
Abstract: K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA
Text: K4C5608/1638F 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.3 - 1 - REV. 0.3 Jan. 2005 K4C5608/1638F 256Mb Network-DRAM Revision History Version 0.0 Dec./ 2003 - First Release Version 0.1 (Aug./ 2004) - Deleted BL2 and self refresh Version 0.2 (Nov./ 2004)
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Original
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K4C5608/1638F
256Mb
400Mbps)
366Mbps
333Mbps
K4C560838F-TCD3
K4C560838F-TCD4
K4C560838F-TCDA
K4C561638F-TCD3
K4C561638F-TCD4
K4C561638F-TCDA
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PDF
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TC59LM806CFT
Abstract: TC59LM814CFT
Text: TC59LM814/06CFT-50,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network
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Original
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TC59LM814/06CFT-50
256Mbits
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFT
TC59LM814CFT
TC59LM806CFT
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PDF
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K4C560838C-TCD3
Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.4 - 1 - REV. 0.4 May. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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K4C5608/1638C
256Mb
366Mbps/pin
183MHz)
K4C560838C-TCD3
K4C560838C-TCD4
K4C560838C-TCDA
K4C561638C-TCD3
K4C561638C-TCD4
K4C561638C-TCDA
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400x875
Abstract: K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA
Text: K4C5608/1638F 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.0 - 1 - REV. 0.0 Dec. 2003 K4C5608/1638F 256Mb Network-DRAM Revision History Version 0.0 Dec./ 2003 - First Release - 2 - REV. 0.0 Dec. 2003 K4C5608/1638F 256Mb Network-DRAM General Information
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Original
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K4C5608/1638F
256Mb
400Mbps)
366Mbps
333Mbps
400x875
K4C560838F-TCD3
K4C560838F-TCD4
K4C560838F-TCDA
K4C561638F-TCD3
K4C561638F-TCD4
K4C561638F-TCDA
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Untitled
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.6 - 1 - REV. 0.6 Apr. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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K4C5608/1638C
256Mb
366Mbps/pin
183MHz)
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Untitled
Abstract: No abstract text available
Text: TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR FCRAMTM
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Original
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TC59LM814/06CFT-50
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFT
TC59LM814CFT
TC59LM806CFT
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PDF
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Untitled
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.3 - 1 - REV. 0.3 Apr. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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Original
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K4C5608/1638C
256Mb
366Mbps/pin
183MHz)
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PDF
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TC59LM806CFT
Abstract: TC59LM814CFT
Text: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network
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Original
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TC59LM814/06CFT-50
256Mbits
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFT
TC59LM814CFT
TC59LM806CFT
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PDF
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Untitled
Abstract: No abstract text available
Text: K4C5608/1638M 256Mb FCRAM FCRAM Specification Version 0.0 - 1 - REV. 0.0 Oct. 2001 K4C5608/1638M 256Mb FCRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Notice : FCRAM is a Trademark of Fujitsu Limited, Japen - 2 - REV. 0.0 Oct. 2001 K4C5608/1638M
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K4C5608/1638M
256Mb
200MHz)
154MHz
256Mx8
K4C560838M-TCB
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TC59LM806CTG
Abstract: TC59LM814CTG
Text: TC59LM814/06CTG-50,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CTG are Network
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Original
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TC59LM814/06CTG-50
256Mbits
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CTG
TC59LM814CTG
TC59LM806CTG
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PDF
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Untitled
Abstract: No abstract text available
Text: TC59LM814/06CTG-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CTG are Network
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Original
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TC59LM814/06CTG-50
256Mbits
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CTG
TC59LM814CTG
TC59LM806CTG
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PDF
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TC59LM806CFT
Abstract: TC59LM814CFT
Text: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 4,194,304-WORDS x 4 BANKS × 16-BITS Network FCRAM TM 8,388,608-WORDS × 4 BANKS × 8-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network
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Original
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TC59LM814/06CFT-50
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFT
TC59LM814CFT
TC59LM806CFT
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PDF
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lm814
Abstract: C1948
Text: TOSHIBA TENTATIVE TC59LM814/06BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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OCR Scan
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TC59LM814/06BFT-22
304-WORDSx4BANKSx
16-BITS
608-WORDSX4BANKSX8-BITS
TC59LM814/06BFT
TC59LM814BFT
304-wordsX4
TC59LM806BFT
lm814
C1948
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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OCR Scan
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TC59LM814/06CFT-50
304-WORDSX4BANKSX
16-BITS
608-WORDSX4BANKSX8-BITS
TC59LM814/06CFT
TC59LM814CFT
304-wordsX4
TC59LM806CFT
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PDF
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lm815
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59LM815/07/03BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM
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OCR Scan
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TC59LM815/07/03
BFT-22
304-WORDSx4BANKSx
16-BITS
608-WORDSX4BANKSX8-BITS
216-WORDS
TC59LM815/07/03BFT
TC59LM815BFT
304-wordsX4
TC59LM807BFT
lm815
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PDF
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