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    RCA SOLID STATE POWER TRANSISTOR Search Results

    RCA SOLID STATE POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RCA SOLID STATE POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


    OCR Scan     		PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    2N4933

    Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
    Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International


    OCR Scan     		PDF 2N4932 2N4933 RCA-2N4932* RCA-2N49331 88MHz) 2N4932 2N4933, 24-volt ST-3250. ST-3230. 2N4933 RCA-2N4933 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE

    RCA-2N5179

    Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
    Text: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as


    OCR Scan     		PDF 2N5179 RCA-2N5179* 2N5179 TA7319. 482mm) RCA-2N5179 2n5179 equivalent TA7319 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor

    Untitled

    Abstract: No abstract text available
    Text: D e | 3Ö750Ö1 D0133AS fi 01E 13385 D 7~ - ¥ 5 - 0 7 G E SOLI» STATE D I 3875081 G E SOLID STATE CD4527B Types CMOS BCD Rate Multiplier Features: • Oascadable in multiples o f 4-bits High-Voltage Types 20-Volt Rating The RCA-CD4527B is a low-power 4-bit digi­


    OCR Scan     		PDF D0133AS CD4527B 20-Volt RCA-CD4527B

    PJ 1309

    Abstract: CD40181B
    Text: HARRIS SEMICOND SECTOR 37E ï> 4302271 3875081 G E SOLID STATE 1 0021321 O 1E 1 35 07 IHAS D T - </?-/ CD40181B Types CMOS 4-Bit Arithmetic Logic Unit High-Voltage Types (20-Volt Rating The RCA-CD40181B is a low-power four-bit parallel arithmetic logic unit (A L U ) capable


    OCR Scan     		PDF CD40181B 20-Volt RCA-CD40181B PJ 1309

    RCA-40967

    Abstract: 40967 40968 ATC100 596 transistor 2575A rca 832
    Text: File No. 596 RF Pow er T ra n sis to rs 40967 40968 Solid State Division 2 -W and 6 -W 4 7 0 - MHz Silicon N -P -N Overlay Transistors For UHF Amplifier Service T - Features-. • A ll devices tested at in fin ite VSWR w ith rated power inpu t RCA H F -44 PA C K AG E


    OCR Scan     		PDF 470-MHz RCA-40967 TA8562 TA8563, VOLTAGE115 40967 40968 ATC100 596 transistor 2575A rca 832

    2N3839

    Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
    Text: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the


    OCR Scan     		PDF 2N3839 RCA-2N3839* 2N3839 2N2857, 2N2857 2n3839 rca VHF transistor amplifier circuit

    TA2761

    Abstract: indiana general ferrites RCA-40608 HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE
    Text: File No. 356 [JUCBZTD ^ P o w e r T r a n s is to rs Solid State Division 40608 RCA-40608 is an ep itax ial silico n n-p-n p lan ar tra n s is ­ tor. I t is e s p e c ia lly designed for operation a s a C la s s A, wide-band power am plifier in VHF circu its.


    OCR Scan     		PDF RCA-40608 TA2761 100fi. I237R2 92CS-22857 TA2761 indiana general ferrites HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE

    J374

    Abstract: RFH35N08 RFH35N10 RFK35N10 RFK35N08
    Text: _~DÏ D Ë J 3Û75DÛ1 D D l ö S O l 3 8 7 5 Ö 8 1 G E SOLID fl J - STATE Standard Pow er M O S F E T s _ 0 1E 18201 RFH35N08, RFH35N10 DT - S ^ ^ I S File N u m b e r 1634 Power MOS Field-Effect Transistors N-Chanhel Enhancement-Mode


    OCR Scan     		PDF RFH35N08, RFH35N10 92CS-J374I RFH35N08 RFH35N10* 2CS17W7 92c5-37i73 PMP411A. CS-S7I74 92cs-37i75 J374 RFH35N10 RFK35N10 RFK35N08

    RCA8766

    Abstract: RCA8766A 0133a TA8766 0133-A RCA8766D RCA8766C RCA8766E darlington npn rca 17312 d
    Text: G E SOLI» 3875081 01 STATE G E SOLID STATE dÉ T| 0 1E 3Û750Û1 0 0 1 7 3 1 1 0 1731Y D~ T -3 3 -2 9 - Darlington Power Transistors File Number RCA8766 Series 973 10-Am pere N-P-N M onolithic Darlington Power Transistors 350, 400, 450 Volts, 150 Watts


    OCR Scan     		PDF GD17311 RCA8766 10-Ampere O-204AA RCA-8766 G017314 T-33-2J RCA8766A 0133a TA8766 0133-A RCA8766D RCA8766C RCA8766E darlington npn rca 17312 d

    RCA9229D

    Abstract: RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C
    Text: 3875081 G E SOLID SfÄTE 01E 17323 D Darlington Power Transistors File Number 1448 RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A C om plem entary High Current,


    OCR Scan     		PDF RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D T0-204AE RCA-9228 RCA9229D RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C

    1763S

    Abstract: RFM4N35 RFM4N40 RFP4N35 RFP4N40
    Text: □ 1. DE 13fl7SDfll 00 10125 7 38/5081 G É SOLID STATE Standard Power MOSFETs 0 1E 18125 _ RFM4N35, RFM4N40, RFP4N35, RFP4N40 D File Number 1491 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM


    OCR Scan     		PDF 13fl7SDfll RFM4N35, RFM4N40, RFP4N35, RFP4N40 RFM4N35 RFM4N40 RFP4N35 RFP4N40* 92CS-37053 1763S RFP4N40

    MJ15022 equivalent

    Abstract: RCA9166A MJ15024
    Text: G E S OL I » STATE 3 8 7 5081 G E ÏÏÏ SOLID STATE DE J 3 Û 7 S D Ô 1 01E □□174flh 17486 D General-Purpose Power _ _ _ !— _ RCA9166Ä, RCA9166B, MJ15022, MJ15024


    OCR Scan     		PDF 174flh RCA9166Ä RCA9166B, MJ15022, MJ15024 O-204AA HGP-1045 MJ15022 equivalent RCA9166A MJ15024

    m 9625

    Abstract: RFK35N08 RFK35N10
    Text: DÏ 3875081 G È DËJ 3ö75Qäl SOLID STATE Standard Power MOSFETs □□lflEDS S “ 01E _ _ 18205 RFK35N08, RFK35N10 D T S Ì- IS File Number 1499 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF RFK35N08, RFK35N10 RFK35N08 RFK35N10* 2CS17W7 92C5-37I73 PMP411A. CS-S7I74 92cs-37i75 92CS-Ã m 9625 RFK35N10

    2N4063

    Abstract: 2n3440 equivalent RCA-2N3439 2N3439 2N3439 RCA 2N4064 2N3440 2N3440 rca rca 2n3440 RCA transistors 2n3440
    Text: D l K j 3 a 7 S 387S0S1 Q E SOLID STATE a i 0 0 1 7 1 5 4 „ ,= q • “ , | 4 D T'B'S-I'B High-Voltage Power Transistors 2N3439, 2N3440, 2N4063, 2N4064 High-Voltage Silicon N-P-N Planar Transistors


    OCR Scan     		PDF 2N3439, 2N3440, 2N4063, 2N4064 2N4063) 2N4064) 2N4063 2n3440 equivalent RCA-2N3439 2N3439 2N3439 RCA 2N3440 2N3440 rca rca 2n3440 RCA transistors 2n3440

    RFM7N35

    Abstract: RFM7N40 RFP7N35 RFP7N40 ta9398
    Text: 3875081 G E SOLID_ STATE S ta n d a r d P o w e r m ö s f e t s " 01 ' " '_ _ DEf307SDfll 0010133 b RFM7N35, RFM7N40, RFP7N35, RFP7N40 |~~ File N u m b e r Power MOS Field-Effect Transistors 1536 T - s q - i / -t N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF DEf307SDfll RFM7N35, RFM7N40, RFP7N35, RFP7N40 92CS-3374I RFM7N35 RFM7N40 RFP7N35 RFP7N40* RFP7N40 ta9398

    RFM6N45

    Abstract: RFM6N50 RFP6N45 RFP6N50
    Text: Hi 3875081 G E SOLID 3fl7SGfll DOIAIS^ 4 T STATE Standard Power MOSFETs 01E 18129 D r-3 ? -// -_ •39-/3 RFM6N45.RFM6N50, RFP6N45, RFP6N50 File N u m b e r 1494 Power MOS Field-Effect Transistors TERMINAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF RFM6N45 -RFM6N50, RFP6N45, RFP6N50 RFM6N50 RFP6N45 RFP6N50* RFM6N45, RFM6N50,

    2N5416 RCA

    Abstract: 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA
    Text: E SOLID STATE qi DE 1 3 fl7SDfll QQ171ba ‘i W^T- 3 1 ~ 1 High-Voltage Power Transistors- 5 !-• _ 2N5415, 2N5416 File Number Silicon P-N-P High-Voltage Planar Transistors


    OCR Scan     		PDF 2N5415, 2N5416 T-37W7 2N5415: 2N344CT 2NS416: 2N3439" O-205AD 2NS416) 2N5416) 2N5416 RCA 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA

    2N5416 RCA

    Abstract: RCA-2N5415 2n5415 2N3439 RCA 2N5415 RCA
    Text: E SOLID STATE High-Voltage Power Transistors. ôï Ì I~T-37-a DEf|3fl7S0âl OQlVlbfl 2N5415, 2N5416 File Number Silicon P-N-P High-Voltage Planar Transistors 336 terminaldesignations For H ig h -S p ee d Sw itching and Lin ear-A m plifier A p plications in M ilitary, Industrial and


    OCR Scan     		PDF T-37-a 2N5415, 2N5416 2N5415: 2N3440' 2N5416: 2N343& 2NS416) 2N5415) 2N5416 RCA RCA-2N5415 2n5415 2N3439 RCA 2N5415 RCA

    CD22777

    Abstract: CD22777E ICAN-6525 cd2277
    Text: VtCil Solid State CD22777 Types Advance Information/ Preliminary Data CMOS Logic ICs TOP VIEW 1 B O SC ILLATO R IN P U T 2 7 “ OSC ILLATO R OUTPUT “ ALA R M O UTPUT MOTOR OUTPUT 1“ _ MOTOR OUTPUT 2 92CS - 4 0 5 5 3 TERMINAL ASSIGNMENT CMOS 32 kHz Quartz Analog


    OCR Scan     		PDF CD22777 RCA-CD22777 1CE-402, CD22777E ICAN-6525 cd2277

    RFK30N12

    Abstract: C039 18198 RFH30N12 RFH30N15 Scans-00121260
    Text: 3 8 7 5 0 8 T gT E ~ S O L Í D Standard Power MOSFETs 3 ñ 7 5 D ñ i DI G E S O LI » STATE STATE 0 1E o a i a n 3 18193 a D iT - ^ - '/S ’ _ RFH30N12, RFH30N15 File N u m b e r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF RFH30N12, RFH30N15 9ZCS-53741 RFH30N12 RFH30N15* JCS-176S7 RFK30N12, RFK30N15 92CS-36Z32 92CS-362S3 RFK30N12 C039 18198 RFH30N15 Scans-00121260

    TA9401

    Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10
    Text: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 | 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 PMP411A. 92CS-37569 TA9401 TA940

    TA8203

    Abstract: 8A103 2N6386-2N6388
    Text: aï 3875081 G E SOLID ]>Fj3A7S0fll 0D172bâ 5 | ~ STATE OIE Darlington Power Transistors_ Ï7268 " D 2N6666, 2N6667, 2N6668 File Number 10-Ampere P-N-P Darlington Power Transistors TERMINAL DESIGNATIONS 40-60-80 Volts, 65 Watts Gain of 1000 a t 3 A 2 N 6 6 6 6


    OCR Scan     		PDF 0D172bâ 2N6666, 2N6667, 2N6668 10-Ampere O-22QAB 20944BI TA8203 8A103 2N6386-2N6388

    2N3392 equivalent

    Abstract: 2N3394 2N3394 equivalent 2N3391 2n3393 equivalent 92C3-426C3 2N3391A 2N3393 2N3392 3391A
    Text: G E SOLID STATE 3875081 G E SOLID STATE 0 1 D E Ï 3Û7S0Û1 0017=111 01E 17911 D r- W ' t l Transistors 2N3390-94,2N3391A Silicon Transistors TO-98 The 6E/RCA 2N3390-94, 2N3391A are planar, passivated


    OCR Scan     		PDF DD17111 2N3390-94 2N3391A 2N3390-94, 2N3391A 2N3391 2N3391A. 2CS-427II 750fll 2N3392 equivalent 2N3394 2N3394 equivalent 2n3393 equivalent 92C3-426C3 2N3393 2N3392 3391A