GR881
Abstract: STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k
Text: GR881 8K x 8 NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.
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GR881
GR881
2000/95/EC
STATIC RAM 6264
6264 static RAM
6264 ram
ram 6264
8k static ram 6264
6264* ram
6264 cmos ram
6264 8k
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y338
Abstract: y344 Y341 y323 Y332 y322 Y424 Y346 Y328 y407
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD161620 432 OUTPUT TFT-LCD SOURCE DRIVER WITH RAM DESCRIPTION The µ PD161620 is a TFT-LCD source driver that includes display RAM. This driver has 432 outputs, a display RAM capacity of 304,128 bits 432 dots x 4 bits x 176 lines and, can provide a
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PD161620
PD161620
096-color
y338
y344
Y341
y323
Y332
y322
Y424
Y346
Y328
y407
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HD66776 equivalent
Abstract: psd56 R017H RGB22 Y236 GSM based home appliance control circuit diagram 5.1 amplifire circuit diagram BLACK DIAGRAM FOR POWER SUPPLY r014h external RAM ic 6264
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD161802 240 OUTPUTS TFT-LCD SOURCE DRIVER WITH RAM DESCRIPTION The µ PD161802 is a TFT-LCD source driver that includes display RAM This driver has 240 outputs, a display RAM capacity of 172.8 K bytes 240 pixels x 18 bits x 320 lines and can provide a
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PD161802
PD161802
144-color
HD66776 equivalent
psd56
R017H
RGB22
Y236
GSM based home appliance control circuit diagram
5.1 amplifire circuit diagram
BLACK DIAGRAM FOR POWER SUPPLY
r014h
external RAM ic 6264
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ST92F120 programmer
Abstract: ST92F120v1q7 programmer DAP7 LT67 diodes diode 2000V EV2 ewm d35 SS 1091 asn st9 technical manual BCD to 7 segment decoder with tails J1850
Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD DATASHEET • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 2 to 4 Kbytes RAM, 1K byte emulated EEPROM E3PROMTM – 224 general purpose registers (register file)
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ST92F120
8/16-BIT
J1850
ST92F120 programmer
ST92F120v1q7 programmer
DAP7
LT67 diodes
diode 2000V EV2
ewm d35
SS 1091 asn
st9 technical manual
BCD to 7 segment decoder with tails
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CAPACITOR 33PF
Abstract: P942 f2f decoder f2f decoder circuit ST92F120 J1850 PQFP100 f2f decoder ic ST92F120JV9 ST92F120V1
Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD DATASHEET • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 2 to 4 Kbytes RAM, 1K byte emulated EEPROM E3PROMTM – 224 general purpose registers (register file)
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ST92F120
8/16-BIT
J1850
CAPACITOR 33PF
P942
f2f decoder
f2f decoder circuit
ST92F120
PQFP100
f2f decoder ic
ST92F120JV9
ST92F120V1
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SS 1091 asn
Abstract: TDA 1045 picture in picture chip SAE-J1850
Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD PRELIMINARY DATA • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 2 to 4 Kbytes RAM, 1K byte emulated EEPROM E3PROMTM – 224 general purpose registers (register file)
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ST92F120
8/16-BIT
J1850
SS 1091 asn
TDA 1045
picture in picture chip
SAE-J1850
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DAP 015
Abstract: No abstract text available
Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD DATASHEET • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 2 to 4 Kbytes RAM, 1K byte emulated EEPROM E3PROMTM – 224 general purpose registers (register file)
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ST92F120
8/16-BIT
J1850
DAP 015
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free transistor ta6
Abstract: tda 1033 marking 6B pin diode tda 1053 transistor A3 F45
Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD DATASHEET • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 2 to 4 Kbytes RAM, 1K byte emulated EEPROM E3PROMTM – 224 general purpose registers (register file)
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ST92F120
8/16-BIT
J1850
free transistor ta6
tda 1033
marking 6B
pin diode tda 1053
transistor A3 F45
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schematic diagram dc-ac inverter using scr
Abstract: ST92F120 programmer j1850 application schematic diode 2000V EV2 224003 7 segment latch decoder for hexa decimal numbers F90 P02 SCH 298 schematic diagram dc-ac inverter SS 1091 asn
Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD PRELIMINARY DATA • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 2 to 4 Kbytes RAM, 1K byte emulated EEPROM E3PROMTM – 224 general purpose registers (register file)
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ST92F120
8/16-BIT
J1850
schematic diagram dc-ac inverter using scr
ST92F120 programmer
j1850 application schematic
diode 2000V EV2
224003
7 segment latch decoder for hexa decimal numbers
F90 P02
SCH 298
schematic diagram dc-ac inverter
SS 1091 asn
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Murata CSTcc
Abstract: SS 1091 asn jps inverter ST92F120 programmer J1850 PQFP100 ST92F120 ST92F120JV1 ST92F120JV9 ST92F120V1
Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD PRELIMINARY DATA • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 1.5 to 4 Kbytes RAM, 512 to 1K bytes emulated EEPROM E3PROMTM – 224 general purpose registers (register file)
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ST92F120
8/16-BIT
J1850
Murata CSTcc
SS 1091 asn
jps inverter
ST92F120 programmer
PQFP100
ST92F120
ST92F120JV1
ST92F120JV9
ST92F120V1
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SS 1091 asn
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR f2f decoder ic J1850 PQFP100 ST92F120 ST92F120JV1 ST92F120JV9 ST92F120V1 ST92F120V9
Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD PRELIMINARY DATA • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 1.5 to 4 Kbytes RAM, 512 to 1K bytes emulated EEPROM E3PROMTM – 224 general purpose registers (register file)
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ST92F120
8/16-BIT
J1850
SS 1091 asn
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
f2f decoder ic
PQFP100
ST92F120
ST92F120JV1
ST92F120JV9
ST92F120V1
ST92F120V9
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GR881-H
Abstract: STATIC RAM 6264 6264 ram RAM 6264 6264 cmos ram 6264 8k GR88-H1
Text: GR881-H 8K x 8 NON-VOLATILE RAM GR881-H (8K x 8) NON-VOLATILE RAM READ CYCLE > Address < CE t OH > t ACC > < tACS > tOLZ t> < <CLZ> DOUT < > t OHZ > WRITE CYCLE 1 t WC < Read Cycle Parameter Read cycle time Access time CE to output valid OE to output valid
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GR881-H
A0-A12
GR881-H
STATIC RAM 6264
6264 ram
RAM 6264
6264 cmos ram
6264 8k
GR88-H1
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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Untitled
Abstract: No abstract text available
Text: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • • • GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM
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GR881
28-pin
GR881
GR881.
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NVR8
Abstract: GREENWICH INSTRUMENTS
Text: GREENWICH 8K X 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • NVR8 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM No limit to number of programming cycles Fits standard 28-pin socket
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28-pin
NVR8
GREENWICH INSTRUMENTS
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6264blp
Abstract: cs107
Text: I HM6264B Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-454 Z Rev. 0.0 Sep. 5,1995 Description The Hitachi HM 6264B is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher perform ance and low power consumption by 1.5 ¡am CM OS process technology. The device, packaged in 450 mil SOP (foot
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HM6264B
192-word
ADE-203-454
6264B
64k-bit
6264BLP
DP-28)
cs107
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pd424800
Abstract: nec 424800
Text: m JJPD424800 524,288 x 8-Bit Dynamic CMOS RAM e NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The PD424800 is a fast-page dynamic RAM organized as 524,288 words by 8 bits and designed to operate from a single + 5-volt power supply. Advanced polycide
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uPD424800
pd424800
nec 424800
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organizational structure samsung
Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116
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LH5116
Am9128
CDM6116
HM6116A
HY6116
HM6116
MS6516
SRM2016
MK6116
CXK5816
organizational structure samsung
NMS256X8
MICRON Cross Reference
NMS256
256K RAM HM62256
MK6264
51256SL
TC5565 "cross reference"
MN44256
M5M5256
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Untitled
Abstract: No abstract text available
Text: HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-492A Z Rev. 1.0 Sep. 5, 1996 Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher performance and low power consumption by 1.5 pm CMOS process technology. The device,
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HM6264BI
192-word
ADE-203-492A
64k-bit
HM6264BLFPI
DP-28)
HM6264BLPI
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6264blf
Abstract: HM6264BLPI-10
Text: HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-492A Z Rev. 1.0 Sep. 5, 1996 Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher performance and low power consumption by 1.5 flm CMOS process technology. The device, packaged in 450 mil SOP
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HM6264BI
192-word
ADE-203-492A
64k-bit
6264blf
HM6264BLPI-10
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RAM 6264
Abstract: 6264 static RAM STATIC RAM 6264 6264 cmos ram
Text: INSTRUMENTS USA • • • • • • • Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programming cycles Standard 28-pin JEDEC pin out GR881 is 8 kilobyte of non-volatile memory which is pin-compatible
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28-pin
GR881
A0-A12
GR881.
RAM 6264
6264 static RAM
STATIC RAM 6264
6264 cmos ram
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STATIC RAM 6264
Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)
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6116/SIS
6116H
45/55/70ns
6116H)
100/120/150ns
250mW
STATIC RAM 6264
RAM 6264
6264 EPROM
6116 RAM
6264 RAM
6264 cmos ram
6264 static RAM
rom 6116
6116 static RAM 150ns
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MS6264L-10PC
Abstract: MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC MS6264-70PC r7777T MS6264L-70
Text: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 70/100 ns Max. The M OSEL MS6264 is a high performance, low power CM OS static RAM organized as 8192 words by 8 bits. The device supports easy m em ory expansion with both an active LOW chip enable (Et) and an active High chip
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MS6264
495mW
MS6264L
550nW
MS6264
500mV
MS6264-70PC
P28-1
MS6264-70FC
MS6264L-10PC
MS6264L-10
MS6264-10PC
MS6264L-70PC
Mosel MS6264
MS6264L-10FC
MS6264L-70FC
r7777T
MS6264L-70
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Untitled
Abstract: No abstract text available
Text: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The
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ta3S33Tl
MS6264A
MS6264A
S6264AL-45N
P28-2
S6264AL-45P
P28-1
S6264AL-45S
S28-1
S6264AL-55N
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