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    R1RW0404DGE Search Results

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    R1RW0404DGE Price and Stock

    Rochester Electronics LLC R1RW0404DGE-2LR-B0

    4M HIGH SPEED SRAM (1M X 4-BIT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1RW0404DGE-2LR-B0 Bulk 12
    • 1 -
    • 10 -
    • 100 $26.2
    • 1000 $26.2
    • 10000 $26.2
    		Buy Now

    Renesas Electronics Corporation R1RW0404DGE-2LR#B0

    SRAM Chip Async Single 3.3V 4M-bit 1M x 4-bit 12ns 32-Pin SOJ Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical R1RW0404DGE-2LR#B0 1,430 12
    • 1 -
    • 10 -
    • 100 $29.6
    • 1000 $26.7625
    • 10000 $26.7625
    		Buy Now
    R1RW0404DGE-2LR#B0 52 12
    • 1 -
    • 10 -
    • 100 $29.6
    • 1000 $26.7625
    • 10000 $26.7625
    		Buy Now
    Rochester Electronics R1RW0404DGE-2LR#B0 1,482 1
    • 1 $25.19
    • 10 $25.19
    • 100 $23.68
    • 1000 $21.41
    • 10000 $21.41
    		Buy Now

    R1RW0404DGE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R1RW0404DGE-2LR Renesas Technology 4M High Speed SRAM (1-Mword x 4-bit) Original PDF
    R1RW0404DGE-2PR Renesas Technology 4M High Speed SRAM (1-Mword x 4-bit) Original PDF

    R1RW0404DGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32P0K

    Abstract: R1RW0404D R1RW0404DGE-2LR R1RW0404DGE-2PR REJ03C0115-0100Z r1rw0404dge
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    32P0K

    Abstract: R1RW0404D R1RW0404DGE-2LR R1RW0404DGE-2PR REJ03C0115-0100Z r1rw0404dge
    Text: R1RW0404D Series 4M High Speed SRAM 1-Mword x 4-bit REJ03C0115-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit


    Original     		PDF R1RW0404D REJ03C0115-0100Z 400-mil 32-pin 32P0K R1RW0404DGE-2LR R1RW0404DGE-2PR REJ03C0115-0100Z r1rw0404dge

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


    Original     		PDF REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI

    R1RW0416DGE-2PR

    Abstract: HM62W16255HCTT-10 R1RW0416DSB-2PI R1RW0408DGE-2PI HM62W16255HCJP-10 HM62W16255HCJP-12 HM62W16255HCJPI-12 HM62W16255HCLJP-10 HM62W16255HCLJP-12 HM62W16255HCLTT-10
    Text: Renesas HM62W16255HCJP-10 GS74116AJ-10 HM66AEB36105BP-33 GS8342S36E-300 HM62W16255HCJP-12 GS74116AJ-12 HM66AEB36105BP-40 GS8342S36E-250 HM62W16255HCJPI-10 GS74116AJ-10I HM66AEB36105BP-50 GS8342S36E-200 HM62W16255HCJPI-12 GS74116AJ-12I HM66AEB36105BP-60 GS8342S36E-167


    Original     		PDF HM62W16255HCJP-10 GS74116AJ-10 HM66AEB36105BP-33 GS8342S36E-300 HM62W16255HCJP-12 GS74116AJ-12 HM66AEB36105BP-40 GS8342S36E-250 HM62W16255HCJPI-10 GS74116AJ-10I R1RW0416DGE-2PR HM62W16255HCTT-10 R1RW0416DSB-2PI R1RW0408DGE-2PI HM62W16255HCJP-10 HM62W16255HCJP-12 HM62W16255HCJPI-12 HM62W16255HCLJP-10 HM62W16255HCLJP-12 HM62W16255HCLTT-10