Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode RBQ30T45A Datasheet lDimensions Unit : mm lApplication lStructure General rectification 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 3) High reliability 5.0±0.2 1 Anode
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RBQ30T45A
O220FN
R1102A
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Untitled
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators High-efficiency Step-up Switching Regulator with Built-in Power MOSFET No.13027EET09 BD8314NUV ●Description ROHM’s High-efficiency Step-up Switching Regulator Built-in Power MOSFET BD8314NUV generates step-up output
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13027EET09
BD8314NUV
BD8314NUV
R1102A
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Untitled
Abstract: No abstract text available
Text: RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source
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RQ3E130MN
E130MN
R1102A
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Untitled
Abstract: No abstract text available
Text: Transmission type Photointerrupters Eco-Friendly type RPI-352E Datasheet lDimensions Unit : mm lApplications • Printers Note : *1 Unspecified tolerance shall be ±0.2. *2 Measurment in the bracket is that of lead pin at base the mold. *3 Dimension in parenthesis are show
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RPI-352E
R1102A
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2sc3906k
Abstract: No abstract text available
Text: 2SC4102 / 2SC3906K Datasheet NPN 50mA 120V High Voltage Amplifier transistors lOutline Parameter Value VCEO IC 120V 50mA UMT3 SMT3 Collector Collector Base Base Emitter Emitter 2SC4102 SOT-323 SC-70 lFeatures 1) High Breakdown Voltage (VCEO=120V). 2SC3906K
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2SC4102
2SC3906K
2SC4102
OT-323
SC-70)
OT-346
SC-59)
2SA1579
2SA1514K
2sc3906k
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Untitled
Abstract: No abstract text available
Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2450KE
450mW
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS230AE2
5A/30A*
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: Photodiodes Surface mount type Side view RPMD-0101W1 Datasheet lDimensions (Unit : mm) lApplications Note : Unspecified tolerance shall be 0.15. • Car navigations, Car audios • Household applications • OAs, FAs • PCs, peripheral devices • Other general-purpose applications
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RPMD-0101W1
750nm)
R1102A
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Untitled
Abstract: No abstract text available
Text: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R8005ANX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D
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2SAR544P
2SAR544D
2SAR544P
SC-62)
OT-89>
2SCR544P
2SCR544D
-50mA)
SC-63)
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Untitled
Abstract: No abstract text available
Text: EMD30 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -30V
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EMD30
100mA
SC-107C)
-200mA
DTC114E
DTB713Z
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)
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2SC5824
SC-62)
OT-89>
2SA2071
A/200mA)
R1102A
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Untitled
Abstract: No abstract text available
Text: SMLK1 / SMLK2 series PSML2 Data Sheet lFeatures lOutline • High heat radiation "PSML2" series • Low package by flat frame structure • High Luminous Intensity lSize 1006 0402 4520 (1808) 4.5x2.0mm (t=0.6mm) 1.0×0.6mm (t=0.2mm) Color Type WB lDimensions
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SMLK18WBJBW
SMLK18WBJDW
R1102A
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Untitled
Abstract: No abstract text available
Text: RCD060N25 Nch 250V 6A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
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RCD060N25
530mW
SC-63)
OT-428>
C06N25
R1102A
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Untitled
Abstract: No abstract text available
Text: RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).
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RQ3E150MN
RQ3E15
R1102A
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2SCR514p
Abstract: No abstract text available
Text: 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat)
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2SAR514P
SC-62)
OT-89>
2SCR514P
-300mA/
-15mA)
R1102A
2SCR514p
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Untitled
Abstract: No abstract text available
Text: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCD100N20
182mW
SC-63)
OT-428>
C10N20
R1102A
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Untitled
Abstract: No abstract text available
Text: RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TSMT3 1.0MAX zFeatures 1) Low On-resistance 2) Space saving−small surface mount package (TSMT3) 3) 4V drive 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6
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RSR020P03
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)
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2SC5824
SC-62)
OT-89>
2SA2071
A/200mA)
R1102A
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Untitled
Abstract: No abstract text available
Text: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2160KE
160mW
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)
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2SA2094
2SC5866
SC-96)
R1102A
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Untitled
Abstract: No abstract text available
Text: RV1C002UN Nch 20V 150mA Small Signal MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 2.0W ID 150mA PD 100mW lFeatures (3) VML0806 (1) (2) lInner circuit 1) Ultra small Package (0806size). (1) Gate (2) Source (3) Drain 2) Low voltage drive(1.2V) makes this
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RV1C002UN
150mA
150mA
100mW
VML0806
0806size)
R1102A
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Untitled
Abstract: No abstract text available
Text: R6030ENZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6030ENZ
R1102A
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2SCR514R
Abstract: No abstract text available
Text: 2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A TSMT3 Collector Base Emitter 2SAR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)
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2SAR514R
SC-96)
2SCR514R
-300mA/
-15mA)
R1102A
2SCR514R
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