Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    R07DS0585EJ0100 Search Results

    R07DS0585EJ0100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A

    PRSS0003ZA-A

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology


    Original     		PDF RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A PRSS0003ZA-A