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    RQA0004PXDQS

    Abstract: RQA0004PXTL-E RQA0004 k 1487 db30a
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Sep 09, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


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