rjp30e2
Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200
Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ
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Original
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PDF
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RJP30E2DPP-M0
O-220FL
R07DS0347EJ0200
PRSS0003AF-A)
O-220FL)
rjp30e2
rjp30e2dpp
RJP30E2DPp-M0
RJP30e
PRSS0003AF-A
r07ds0347ej
Rjp30
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ
|
Original
|
PDF
|
RJP30E2DPP-M0
R07DS0347EJ0200
O-220FL
PRSS0003AF-A)
O-220FL)
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ
|
Original
|
PDF
|
RJP30E2DPP-M0
R07DS0347EJ0200
O-220FL
PRSS0003AF-A)
O-220FL)
|