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    IPD80N06S3-09

    Abstract: ANPS071E PG-TO252-3-11
    Text: IPD80N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 8.4 mΩ ID 80 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD80N06S3-09 PG-TO252-3-11 QN0609 IPD80N06S3-09 ANPS071E PG-TO252-3-11 PDF

    g51 smd

    Abstract: D60015
    Text: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD50N06S3-09 PG-TO252-3-11 QN0609 g51 smd D60015 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD50N06S3-09 PG-TO252-3-11 QN0609 PDF

    D70010

    Abstract: No abstract text available
    Text: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD50N06S3-09 PG-TO252-3-11 QN0609 D70010 PDF

    DIODE D38 -06

    Abstract: No abstract text available
    Text: IPD80N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 8.4 mΩ ID 80 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD80N06S3-09 PG-TO252-3-11 QN0609 DIODE D38 -06 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPD80N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 8.4 mΩ ID 80 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD80N06S3-09 PG-TO252-3-11 QN0609 PDF