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    QGS 80 Price and Stock

    KEMET Corporation USEQGSEAC82180

    Air Quality Sensors Gas Detector Sensor Digital SMD CO2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USEQGSEAC82180 2,059
    • 1 $20.34
    • 10 $18.13
    • 100 $15.16
    • 1000 $13.19
    • 10000 $13.19
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    KEMET Corporation USEQGSEAN8L180

    Air Quality Sensors Gas Detector Sensor Digital SMD Gas NO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USEQGSEAN8L180 88
    • 1 $21.48
    • 10 $18.44
    • 100 $15.54
    • 1000 $12.81
    • 10000 $12.81
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    KEMET Corporation USEQGSEH950180

    Air Quality Sensors Gas Detector Sensor Digital SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USEQGSEH950180 87
    • 1 $42.12
    • 10 $39.48
    • 100 $37.05
    • 1000 $31.64
    • 10000 $31.64
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    KEMET Corporation USEQGSM1C82100

    Air Quality Sensors Gas Detector Sensor Digital SMD CO2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USEQGSM1C82100 12
    • 1 $63.54
    • 10 $58.63
    • 100 $58.63
    • 1000 $58.63
    • 10000 $58.63
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    KEMET Corporation USEQGSMH950100

    Air Quality Sensors Gas Detector Sensor Digital SMD Board
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USEQGSMH950100
    • 1 $97.78
    • 10 $91.06
    • 100 $91.06
    • 1000 $91.06
    • 10000 $91.06
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    QGS 80 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		PDF IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFPS40N50

    Abstract: TO274
    Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		PDF IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFPS40N50 TO274

    Untitled

    Abstract: No abstract text available
    Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		PDF IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 18-Jul-08

    IRFPS40N50L

    Abstract: SiHFPS40N50L IRFPS40N50LPBF
    Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		PDF IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 11-Mar-11 IRFPS40N50L IRFPS40N50LPBF

    28AB

    Abstract: No abstract text available
    Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		PDF IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 11-Mar-11 28AB

    Untitled

    Abstract: No abstract text available
    Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		PDF IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration


    Original     		PDF IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-262) O-263) 12-Mar-07

    marking s15 diode

    Abstract: s15 diode
    Text: IRFPE40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive avalanche rated 2.0 Qg (Max.) (nC) 130 • Isolated central mounting hole Qgs (nC) 17 • Fast switching


    Original     		PDF IRFPE40 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 marking s15 diode s15 diode

    s8143

    Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3
    Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration


    Original     		PDF IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBG30, SiHFBG30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30

    IRFPE40

    Abstract: No abstract text available
    Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


    Original     		PDF IRFPE40, SiHFPE40 2002/95/EC O-247AC 11-Mar-11 IRFPE40

    IRFPE50

    Abstract: SiHFPE50 IRFPE50PBF
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC 11-Mar-11 IRFPE50 IRFPE50PBF

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30

    Untitled

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling


    Original     		PDF IRFPE30, SiHFPE30 2002/95/EC O-247AC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRFPE40

    Abstract: No abstract text available
    Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


    Original     		PDF IRFPE40, SiHFPE40 2002/95/EC O-247AC O-247AC 11-Mar-11 IRFPE40

    IRFPE50

    Abstract: 78A31
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRFPE50, SiHFPE50 O-247 O-247 12-Mar-07 IRFPE50 78A31

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFBE30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBE30, SiHFBE30 O-220 O-220 12-Mar-07 IRFBE30

    Untitled

    Abstract: No abstract text available
    Text: IRFP344, SiHFP344 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V 0.63 Qg (Max.) (nC) 80 Qgs (nC) 12 Qgd (nC) 41 Configuration • Repetitive Avalanche Rated RoHS • Isolated Central Mounting Hole


    Original     		PDF IRFP344, SiHFP344 O-247 O-247 O-220 18-Jul-08

    n 332 ab

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		PDF IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 n 332 ab

    IRFPE30

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole


    Original     		PDF IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30

    IRF744

    Abstract: application irf744 SiHF744 SiHF744-E3
    Text: IRF744, SiHF744 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) Available VGS = 10 V • Repetitive Avalanche Rated 0.63 Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 12 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRF744, SiHF744 O-220 O-220 18-Jul-08 IRF744 application irf744 SiHF744-E3