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ic tba 220 Abstract: km6161002j KM6161002-17 Text: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)	OCR Scan	PDF	KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin Q0177DS ic tba 220 km6161002j KM6161002-17

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ic tba 220

Abstract: km6161002j KM6161002-17
Text: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)

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KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin Q0177DS ic tba 220 km6161002j KM6161002-17