MAR 826
Abstract: No abstract text available
Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC
|
Original
|
PDF
|
SQ7415AEN
IEC61249-2-21
AEC-Q101
2002/95/EC
SQ7415AEN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MAR 826
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
REJ03F0263-0100
R8A66162SP
48pin
PRSP0048ZB-A
48P2X-A
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit
|
OCR Scan
|
PDF
|
KMM5361000A/AG
Q014Sh4
361000A
bitsX36
20-pin
72-pin
361000A-
130ns
|
J200V
Abstract: C67078-A1016-A2 V103
Text: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 88D 14702 " d r- 3 ^ - // BUZ63 SIEMENS AKTIENGESELLSCHAF _ N-Channel Main ratings - 400 V Draln-source voltage K>a = 5,9 A Continuous drain current 4 Draln-source on-reslstance ^OS «l = 1.0Î2 Description Case
|
OCR Scan
|
PDF
|
53SbOS
Q0147G2
C67078-A1016-A2
aS35bOS
J200V
C67078-A1016-A2
V103
|
IC 4078
Abstract: 4078B
Text: S G S-THOMSON 07C D I 7 ^ 2 3 7 C O S /M O S Î9 M IN T E G R A T E D :ÿ k C IR C U IT 7929225 Q014fl7b D I ^1C 0 8 8 9 0 S G S SEMICONDUCTOR CORP *• hcc/hcf w ts i . ,J Ü * p < /^ .û 9 -ô 5 8-INPUT NOR/OR GATE • • • • • • MEDIUM-SPEED OPERATION tpHL., t PLH= 75 ns TYP. A T V DD= 10V
|
OCR Scan
|
PDF
|
Q014fl7b
4078B
IC 4078
4078B
|
4078B
Abstract: 4078BE
Text: C O S /M O S G S-THOMSON 07C D I 7 ^ 2 3 7 Q014fl7b D I S Î 9 M *• IN T E G R A T E D :ÿ h c c /h c f w t s k C IR C U IT . ^1C 7929225 S G S SEM ICONDUCTOR 08890 i ,J Ü * p < / ^ .û 9 -ô 5 CORP 8-INPUT NOR/OR GATE • • • • • • M E D IU M -S P E E D O P E R A T IO N tpHL., tPL H = 75 ns TYP. A T V D D = 10V
|
OCR Scan
|
PDF
|
Q014fl7b
4078B
14-lead
4078B
4078BE
|
asssb
Abstract: No abstract text available
Text: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 8 8D 14702 □ r -3 < 7 -// SIEMENS AKTIENGESELLSCHAF _ Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance N-Channel - 400 V K>a = 5,9 A 4 ^0S «l = 1,0 f i Qo- Description
|
OCR Scan
|
PDF
|
23SbOS
Q0147G2
C67078-A1016-A2
fl23SbOS
00147Db
BUZ63
asssb
|
RCA-CA3127
Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
Text: G E SOLID STATE 01 3>e 1 3&7SQB1 Q014b43 T T ' 7 rLM 3 ‘'2S' IB _ W Arrays CA3127 High-Frequency N-P-N Transistor Array For Low -Pow er A pp lications at Frequencies up to 500 MHz
|
OCR Scan
|
PDF
|
DQ14t43
CA3127
RCA-CA3127*
CA3127
100-MHz
RCA-CA3127
rca 0190 transistor
iY22
rca 0190
6 "transistor arrays" ic
currentmirror
|
bly89a
Abstract: Transistor bly89a
Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
|
OCR Scan
|
PDF
|
Q01414fl
BLY89A
7Z675I
bly89a
Transistor bly89a
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • T'ìbMlMa Q0142ß7 G3T PRELIMINARY KM75C04A CMOS FIFO First-in First-out FIFO 4 K x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 4K x 9 organization • Very high speed independent of depth/width
|
OCR Scan
|
PDF
|
Q0142Ã
KM75C04A
150mA
|
VN1706m
Abstract: VN1706L
Text: SILICONIX INC 1ÖE D • ÖSS473S Q014CH4 1 ■ VN1706L, VN1706M f X S ilic o n ix J J f incorporated N-Channel Enhancem ent-M ode M OS Transistors T-2-7-Z5' PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS fDS(ON) (V) ( Í1 ) >d (A) PACKAGE VN1706L 170 6 0.22 TO-92
|
OCR Scan
|
PDF
|
SS473S
Q014CH4
VN1706L,
VN1706M
VN1706L
O-237
VNDB24
VN1706m
|
AUTOMATIC ROOM LIGHT CONTROL
Abstract: laser diode 15mw 1550nm ML9701A 25X1 ML9911 ML9911A InGaAs Photodiode 1550nm
Text: MITSUBISHI LASER DIODES M L9XX1A MITSUBISHI DISCRETE SC 31E D • bsm aas SERIES Q014201 h M M I T S FOR OPTICAL COMMUNICATION TYPE NAME M L9701 A, M L 9911A DESCRIPTION FEATURES Mitsubishi ML9XX1A series are InGaAsP laser diodes emit ting light beams around 1550nm wavelength. They lase by
|
OCR Scan
|
PDF
|
ml9701a,
ml9911a
1550nm
15mW/facet
ML9701A
ML9911A,
AUTOMATIC ROOM LIGHT CONTROL
laser diode 15mw 1550nm
25X1
ML9911
ML9911A
InGaAs Photodiode 1550nm
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI InGaAs PHOTODIODES PD7XX6 MITSUBISHI DISCRETE SC 31E D I S E R IE S Q014E43 □ B M I T 5 F O R O P T IC A L C O M M U N IC A T IO N T - 4 1 -D 7 TYPE NAME DESCRIPTION FEATURES The PD 7X X 6 series are InG aAs photodiodes designed to • • High quantum efficiency
|
OCR Scan
|
PDF
|
Q014E43
300/um
0ai424b
1300nm)
1300nm,
|
1550nm photo detector
Abstract: No abstract text available
Text: 1ITSUBISHI DISCRETE SC blE J> m t.aM'lflST Q014fi3b 444 • H I T S FU-310AP APD Module for Long Wavelength Band FU-310AP is detector module containing highlyreliable InGaAs APD (Avalanche photodiode) module for the long wavelength band (1—1.6/m ) and has
|
OCR Scan
|
PDF
|
Q014fi3b
FU-310AP
FU-310AP
0G1463fl
1550nm photo detector
|
|
|
Untitled
Abstract: No abstract text available
Text: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the
|
OCR Scan
|
PDF
|
HN27C301P/FP
131072-word
HN27C301P
|
Untitled
Abstract: No abstract text available
Text: 16-BIT TRI-PORT BUS EXCHANGER IDT73720/A Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • High-speed 16-bit bus exchange for interbus com m unica tion in the following environments: — Multi-way interleaving memory — Multiplexed address and data busses
|
OCR Scan
|
PDF
|
16-BIT
IDT73720/A
R3051
R3051â
R3721
68-Pin
80-Pin
A25771
|
AN5437
Abstract: amplification 111 AN5437K
Text: Panasonic ICs fo r TV A N 5437K Color TV Deflection Signal Processing 1C • Overview The A N 5437K is an integrated circuit designed for color T V deflection signal processing circuit. It can operate with 12V pow er supply and is suitable for various types of
|
OCR Scan
|
PDF
|
AN5437K
AN5437K
AN5437
amplification 111
|
panasonic ccd dsp
Abstract: AN2035FAQ
Text: Panasonic ICs for Video Camera AN2035FAQ CDS A/D pre-processor 1C for digital CCD camera • Overview The AN2035FAQ is a CDS and A/D pre-processing 1C for digital CCD camera. ■ Features • • • • CDS part : 6-dB and 9-dB amplifiers AGC part : Gain control amplifier —4 to 20dB
|
OCR Scan
|
PDF
|
AN2035FAQ
AN2035FAQ
21ier
Q014b37
panasonic ccd dsp
|
J0350
Abstract: JO3501 FTE801 JO3502 PTE801 J03501
Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM
|
OCR Scan
|
PDF
|
b3b725M
-R53-OI
FTE801
J03501
J03SQ2
PTE801
JO3501
JO3502
J03502
J0350
J03501
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA UNDER DEVELOPMENT TMP93CS32 Low Voltage / Low Power CMOS 16-bit MICROCONTROLLERS TMP93CS32F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CS32 is high-speed, advanced 16-bit m icrocontroller developed for controlling m edium to large-scale equipm ent.
|
OCR Scan
|
PDF
|
TMP93CS32
16-bit
TMP93CS32F
TMP93CS32
64-pin
QFP64-P-1414A)
TLCS-90
|
circuit diagrams retu 3.02
Abstract: No abstract text available
Text: BURR— BROUN CORP H E D I il731Bb5 T □01437ñ - S I iz . B U R R -B R O W N I M ñ DAC811 S A V A IL A B L E IN D IE FO R M Iti Microprocessor-Compatible 12-BIT DIGITAL-TO-ANALOG CO N VERTER FEATURES • SINGLE INTEGRATED CIRCUIT CHIP • MICROCOMPUTER INTERFACE: OOUBLE-BUFFERED
|
OCR Scan
|
PDF
|
il731Bb5
DAC811
12-BIT
DAC811
74LS138
16-BIT
circuit diagrams retu 3.02
|
CXA2053Q
Abstract: SFH- SONY
Text: SONY CXA2053Q US Audio Multiplexing Decoder Description The CXA2053Q is an 1C designed as a decoder for th e Z enith T V M u lti-c h a n n e l System and also corresponds with |2C BUS. Functions include stereo dem odulation, S A P S e p a ra te Audio Program
|
OCR Scan
|
PDF
|
CXA2053Q
CXA2053Q
A3A23fl3
48PIN
QFP-48P-L04
QFP048-P-1212-B
COPPER/42
SFH- SONY
|
Untitled
Abstract: No abstract text available
Text: PIC14000 M ic r o c h ip 28-Pin Programmable Mixed Signal Controller PACKAGE TYPES FEATURES High-Performance RISC-like CPU core PDIP, SOIC, SSOP, Windowed CERDIP • Based on PIC16C74 microcontroller • Only 35 single word instructions to learn • All single cycle instructions except for program
|
OCR Scan
|
PDF
|
PIC14000
28-Pin
PIC16C74
blD3501
012bSl
DS00049F-page
|
Untitled
Abstract: No abstract text available
Text: _ r r w TECHNOLOGY m LTC1069-1 Low Power, 8th O rder Progressive Elliptic, Lowpass Filter FCOTUftCS • 8th Order Elliptic Filter in SO-8 Package ■ Operates from Single 3.3V to ±5V Power Supplies * —20dB at 1.2ffljT0FF ■ —52dB at 1 -4 fc L T 0 F F
|
OCR Scan
|
PDF
|
LTC1069-1
|
