Q NPN Search Results

Q NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
CA3083Z-G	Rochester Electronics LLC	CA3083 - General Purpose High Current NPN Transistor Array
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

Q NPN Price and Stock

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Murata Manufacturing Co Ltd LQH3NPN220MJRL Power Inductors - SMD 22 UH 30%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LQH3NPN220MJRL		11,847			1 $0.36 10 $0.232 100 $0.18 1000 $0.161 10000 $0.119	Buy Now
Murata Manufacturing Co Ltd LQH3NPN470MJRL Power Inductors - SMD 47 UH 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LQH3NPN470MJRL		11,155			1 $0.35 10 $0.23 100 $0.178 1000 $0.169 10000 $0.118	Buy Now
Murata Manufacturing Co Ltd LQH3NPN4R7MJRL Power Inductors - SMD 4.7 UH 30%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LQH3NPN4R7MJRL		9,959			1 $0.35 10 $0.23 100 $0.178 1000 $0.162 10000 $0.118	Buy Now
Murata Manufacturing Co Ltd LQH3NPN6R8MMEL Power Inductors - SMD 6.8 UH 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LQH3NPN6R8MMEL		4,000			1 $0.34 10 $0.273 100 $0.212 1000 $0.164 10000 $0.134	Buy Now
Murata Manufacturing Co Ltd LQH3NPN3R3MMEL Power Inductors - SMD 3.3 UH 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LQH3NPN3R3MMEL		3,888			1 $0.34 10 $0.273 100 $0.212 1000 $0.164 10000 $0.134	Buy Now

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Q NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
J3 transistor Abstract: PH1214-100EL Text: Radar Pulsed Power Transistor, 100 Watts, 1.2 - 1.4 GHz, 2 ms Pulse, 20% Duty 8/21/02 PH1214-100EL Rev. 3 Features Q Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH1214-100EL J3 transistor PH1214-100EL	PDF
PH1090-700B Abstract: Mode-S transistor Text: Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty PH1090-700B Rev. 0 Features Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration	Original	PH1090-700B PH1090-700B Mode-S transistor	PDF
transistor 20 dB 14 ghz Abstract: PH1214-300M Radar transistor Common Base configuration transistor 15 GHz Text: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 12/06/01 PH1214-300M Rev. 0 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH1214-300M transistor 20 dB 14 ghz PH1214-300M Radar transistor Common Base configuration transistor 15 GHz	PDF
transistor f 255 Abstract: TRANSISTOR A 225 PH2226-50M VCC36 Text: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors	Original	PH2226-50M transistor f 255 TRANSISTOR A 225 PH2226-50M VCC36	PDF
transistor J11 Abstract: PH3135-65M J11 transistor radar 77 ghz Text: Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 µs Pulse, 10% Duty 8/9/02 PH3135-65M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH3135-65M transistor J11 PH3135-65M J11 transistor radar 77 ghz	PDF
PH2226-110M Abstract: VCC36 Text: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors	Original	PH2226-110M PH2226-110M VCC36	PDF
PH1214-300M Abstract: No abstract text available Text: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 9/4/02 PH1214-300M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH1214-300M PH1214-300M	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)	OCR Scan	2SC3327	PDF
Transistor BSX 62-16 Abstract: No abstract text available Text: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3	OCR Scan	023Sb05 BSX62 ------------------------------------BSX63 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B 060218-X63-C Transistor BSX 62-16	PDF
BT 816 transistor Abstract: PA 1515 transistor 9921 transistor Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure	OCR Scan	BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor	PDF
TDA8340 Abstract: No abstract text available Text: J^ TDA8340;Q TDA8341;Q TELEVISION IF AMPLIFIER AND DEMODULATOR The TD A 8340;Q and TDA8341 ;Q are integrated IF am plifier and dem odulator circuits fo r colour or black/w hite television receivers, the TDA8340;Q is fo r application w ith n-p-n tuners and the	OCR Scan	TDA8340 TDA8341 TDA8341 TDA2540/2541 TDA3540/3541	PDF
C 548 B Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548 Text: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and	OCR Scan	Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 Q6270 200Hz C 548 B B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR ^ ^ Q ^ Q Q Q Unit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. N F=l.ldB , \|S2lel2= 12dB f= 1GHz o <e>n 1 Ò 2 M A X IM U M RATIN G S (Ta = 25°C)	OCR Scan	2SC5066	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in m SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: . Excellent Switching Times : tr= l .Q a s ( M a x .), tf=l.5«s(Max.) at Ic=0.5A . High Collector Breakdown Voltage : V q ^ q = U 0 0 V	OCR Scan	2SC3425	PDF

2SC3609 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 0 Q Q U nit in V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Low Noise Figure, High Gain. NF = l.ld B , \|S2lel2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC3609 2SC3609	PDF
transistor 1047 BL 1 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TY PE HN1B01F U nit in mm A U D IO FREQU ENCY G ENERA L PURPOSE AMPLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1.6-0.1 Q Q1 : —El2 -E33 • High Voltage and High Current : V q e o = _ 50V, I q = —150mA Max. • High hjrg : h]TE = 120~400	OCR Scan	HN1B01F --150mA 150mA transistor 1047 BL 1	PDF
case to-106 Abstract: SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D Text: ADVANI OERLIKON/ SEMICOND 3bE D OPblbMfi O Q Q D O n □ • SELI I -T-Z“I-Q\ TELEVISION/VIDEO DEVICES SEMICONDUCTORS a I.F ./R .F . amplifiers and oscillators NPN TYPE PNP Case: To.92 Case: SOT25 Pd = 250 mW PD=200 mW @ T8 25C Case: To.106 Pd = 150 mW	OCR Scan	OT-25 200mW Ta-26 O-105 O-106 O-220 020INOM. 0J07SI case to-106 SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D	PDF
2SC380TM Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R ^ 3 Q 3 Q Q Y \| y \| HIGH FREQUENCY AMPLIFIER APPLICATIONS. • • U nit in mm .'j.lU A X . High Power Gain : Gpe = 29dB Typ. (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	SC-43 2SC380TM	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ^ n Q R Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. +Q 5 3 . 5 —Q 3 + Q 35 1-5 —0.15 • Low Noise Figure. . NF = 2.5dB, \|S2lel2—14.5dB f = 500MHz . NF = 3.0dB, \|S2lel2= 9-0dB(f=lGHz)	OCR Scan	2SC3098 S2lel2--14 500MHz) SC-59	PDF
transistor f461 Abstract: IF461 I F461 SGSIF461 smps 1500W SGSF461-SGSIF461-SGSF561 SGSF461 MOSFET 700V 10A SGSF461 equivalent smps 750W Text: 7 ^ 5 3 7 a Q P g q g Q l_ Û • / SGS-THOMSON iLHOTO «! n S G S-THOMSON i • - ^3 SGSF461 SGSIF461/F561 3QE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA	OCR Scan	SGSF461 SGSIF461/F561 70kHz ISOWATT218 SGSF461-SGSIF461-SGSF561 T-33-T3 500ms transistor f461 IF461 I F461 SGSIF461 smps 1500W SGSF461-SGSIF461-SGSF561 SGSF461 MOSFET 700V 10A SGSF461 equivalent smps 750W	PDF
ferroxcube for ferrite beads 56-590-65 Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065 Text: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 \| . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar	OCR Scan	N5944 PA18936Â 2N5944 56-590-65/3B VK200/10-3B ferroxcube for ferrite beads 56-590-65 VK200 ferrite inductor vk200 VK200 rfc VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065	PDF
ICP35 Abstract: horizontal output transistor Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2095 COLOR TV HORIZONTAL OUTPUT TRANSISTOR Unit in . High Voltage : V q b q =1500V 1 5 .5 ± Q .5 r i 1.2.1 . High Speed 26-5±0.5 1 001 " oJ<y 'o : VcE sat =5V(Max.) (Ic=3.5A, Ib =0.8A) : tf=l.Ojis(Max.) (IcP=3.5A, Ib I(end)=0.8A)	OCR Scan	2SD2095 ICP35 horizontal output transistor	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTO R 2 £ Q 3 Q Q 0 U nit in mm V H F - U H F BAN D LO W NOISE A M PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ld B , \|S2iel2 = U dB f=lG H z M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	SC-59 2SC3606	PDF
bux98b Abstract: bux98c Text: • T r a g g a? q q e ^ q i ü D ■ BUX98B B UX98C SCS-THOMSON ¡IL[I@ «§ S 6 S-THOMSON 3QE D HIGH VOLTAGE SWITCH DESCRIPTION The BUX98B and BUX98C are silicon multiepitaxial mesa NPN transistors in JedecTO-3 metal case in tended for use in switching and industrial applica	OCR Scan	BUX98B UX98C BUX98B BUX98C T-33-15 BUX98B-BUX98C	PDF

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Q NPN Search Results

Q NPN Result Highlights (5)

Q NPN Price and Stock

Murata Manufacturing Co Ltd LQH3NPN220MJRL

Murata Manufacturing Co Ltd LQH3NPN470MJRL

Murata Manufacturing Co Ltd LQH3NPN4R7MJRL

Murata Manufacturing Co Ltd LQH3NPN6R8MMEL

Murata Manufacturing Co Ltd LQH3NPN3R3MMEL

Q NPN Datasheets Context Search

J3 transistor

PH1090-700B

transistor 20 dB 14 ghz

transistor f 255

transistor J11

PH2226-110M

PH1214-300M

Untitled

Transistor BSX 62-16

BT 816 transistor

TDA8340

C 548 B

Untitled

Untitled

2SC3609

transistor 1047 BL 1

case to-106

2SC380TM

Untitled

transistor f461

ferroxcube for ferrite beads 56-590-65

ICP35

Untitled

bux98b