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    NE5511279A

    Abstract: NE5511279A-T1 NE5511279A-T1A VP215 NEC MARKING surface ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and


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    PDF NE5511279A NE5511279A PU10322EJ01V0DS NE5511279A-T1 NE5511279A-T1A VP215 NEC MARKING surface ldmos nec

    NE5511279A

    Abstract: NE5511279A-T1 NE5511279A-T1A VP215
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF PU10322EJ01V0DS NE5511279A NE5511279A NE5511279A-T1 NE5511279A-T1A VP215

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF PU10322EJ01V0DS NE5511279A

    Marking W3

    Abstract: NE5511279A-A NE5511279A-T1A
    Text: SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology


    Original
    PDF NE5511279A NE5511279A HS350-P3 WS260 VP215 IR260 PU10322EJ01V0DS Marking W3 NE5511279A-A NE5511279A-T1A