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    NESG2031M05

    Abstract: NESG2031M05-T1
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF NESG2031M05 PU10189EJ02V0DS NESG2031M05 NESG2031M05-T1

    transistor M05

    Abstract: NESG2031M05-T1-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF NESG2031M05 NESG2031M05-A NESG2031M05-T1-A PU10189EJ02V0DS transistor M05